DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

 Synchronous Rectification in SMPS  Hard Switching and High Speed Circuit  Power Tools  UPS & Motor Control D G S

◎ SEMIHOW REV.A0,December 2016 HRP49N10H Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 150 A ISM Pulsed Source-Drain Diode Forward Current -- -- 450 VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V -- -- 1.2 V trr Reverse Recovery Time IS = 20 A, VR = 50 V diF/dt = 500 A/μs -- 60 -- ㎱ Qrr Reverse Recovery Charge -- 420 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 ㎂ IGSS Gate-Body Leakage Current VGS = ±20 V, VDS = 0 V -- -- ±100 ㎁ Off Characteristics Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz -- 5110 -- ㎊ Coss Output Capacitance -- 400 -- ㎊ Crss Reverse Transfer Capacitance -- 19 -- ㎊ Rg Gate Resistance VGS = 0 V, VDS = 0 V, f = 1MHz -- 0.7 -- Ω Dynamic Characteristics td(on) Turn-On Time VDS = 50 V, ID = 20 A, RG = 10 Ω -- 20 -- ㎱ tr Turn-On Rise Time -- 12 -- ㎱ td(off) Turn-Off Delay Time -- 65 -- ㎱ tf Turn-Off Fall Time -- 10 -- ㎱ Qg Total Gate Charge VDS = 50 V, ID = 20 A, VGS = 10 V -- 61 -- nC Qgs Gate-Source Charge -- 20 -- nC Qgd Gate-Drain Charge -- 10 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 20 A -- 4.2 4.9 mΩ gFS Forward Transconductance VDS = 5 V, ID = 20 A -- 60 -- S

◎ SEMIHOW REV.A0,December 2016 HRP49N10H Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2 ---- 2 Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 50KΩ 200nF 12V Same Type as DUT 10V DUT RG L I D BVDSS t p VDD IAS VDS (t) ID (t) Time

◎ SEMIHOW REV.A0,December 2016 HRP49N10H Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

◎ SEMIHOW REV.A0,December 2016 HRP49N10H Package Dimension 9.19±0.20 φ3.60 ±0.20 9.90±0.20 2.80±0.20 3.02±0.20 2.54typ 6.50±0.20 0.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 4.50±0.20 0.50±0.20 2.40±0.20 2.54typ TO-220