MCR100-6 SYC | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
Features
- Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits
- Blocking V oltage to 600 V
- On−State Current Rating of 0.8 Amperes RMS at 80°C
- High Surge Current Capability − 10 A
- Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
- Immunity to dV/dt − 20 V/sec Minimum at 110°C
- Glass-Passivated Surface for Reliability and Uniformity
- Pb−Free Packages are Available* SCRs
0.8 A RMS
TO−92 (TO−226) CASE 029 STYLE 10 PIN ASSIGNMENT Gate Anode Cathode K G A x = Specific Device Code A = Assembly Location Y = Year WW = Work Week MARKING DIAGRAM MCR 100−x AYWW
ORDERING INFORMATION
MCR100−003 MCR100−004 MCR100−006 MCR100−008 MCR100−3RL TO 92 (TO 226) MCR100−6RL TO−92 (TO−226) MCR100−6RLRA MCR100−6RLRM MCR100−6ZL1 MCR100−8RL MCR100−003G MCR100−006G MCR100−008G MCR100−3RLG TO 92 (TO 226) MCR100−6RLG TO−92 (TO−226) (Pb−Free) MCR100−6RLRAG (Pb−Free) MCR100−6RLRMG MCR100−6ZL1G MCR100−8RLG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = 40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open) MCR100−3 MCR100−4 MCR100−6 MCR100−8 VDRM, VRRM 100 200 400 600 V On-State RMS Current, (TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 A Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) ITSM 10 A Circuit Fusing Consideration, (t = 8.3 ms) I2t 0.415 A2s Forward Peak Gate Power, (TA = 25°C, Pulse Width 1.0 s) PGM 0.1 W Forward Average Gate Power, (TA = 25°C, t = 8.3 ms) PG(AV) 0.10 W Forward Peak Gate Current, (TA = 25°C, Pulse Width 1.0 s) IGM 1.0 A Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width 1.0 s) VGRM 5.0 V Operating Junction Temperature Range @ Rate VRRM and VDRM TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Characteristic Symbol Max Unit Thermal Resistance,Junction−to−Case Junction−to−Ambient R JC R JA 200 °C/W Lead Solder Temperature (1/16″ from case, 10 secs max) TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 2) TC = 25°C (VD = Rated VDRM and VRRM ; RGK = 1 k)T C = 110°C IDRM , IRRM 100 A ON CHARACTERISTICS Peak Forward On−State Voltage* (ITM = 1.0 A Peak @ TA = 25°C) VTM − − 1.7 V Gate Trigger Current (Continuous dc) (Note 3) T C = 25°C (VAK = 7.0 Vdc, RL = 100 ) IGT − 40 200 A Holding Current(2) TC = 25°C (VAK = 7.0 Vdc, Initiating Current = 20 mA) T C = −40°C IH − 0.5 5.0 mA Latch Current T C = 25°C (VAK = 7.0 V, Ig = 200 A) T C = −40°C IL − 0.6 mA Gate Trigger Voltage (Continuous dc) (Note 3) T C = 25°C (VAK = 7.0 Vdc, RL = 100 )T C = −40°C VGT − 0.62 0.8 1.2 V DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM , Exponential Waveform, RGK = 1000 ,TJ = 110°C) dV/dt 20 35 − V/s Critical Rate of Rise of On−State Current (IPK = 20 A; Pw = 10 sec; diG/dt = 1 A/sec, Igt = 20 mA) di/dt − − 50 A/s *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 2. RGK = 1000 included in measurement. 3. Does not include RGK in measurement. + Current + Voltage VTM IDRM at VDRM IH Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Voltage Current Characteristic of SCR Anode + on state Reverse Blocking Region (off state) Reverse Avalanche Region Anode − Forward Blocking Region IRRM at VRRM (off state)
Figure 7. Device Positioning on Tape
- Maximum alignment deviation between leads not to be greater than 0.2 mm.
- Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
- Component lead to tape adhesion must meet the pull test requirements.
- Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
- Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
- No more than 1 consecutive missing component is permitted.
- A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
- Splices will not interfere with the sprocket feed holes.
STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE TO−92 (TO−226) CASE 029−11 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R A P J L B K G H SECTION X−X CV D N N XX SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 N 0.080 0.105 2.04 2.66