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Technical content

◎ SEMIHOW REV.A0,Feb 2016 MCK22- 8

FEATURES

 Repetitive Peak Off-State Voltage: 600V  R.M.S On–State Current (IT(RMS) = 2A)  Low Gate Trigger Current: ≤ 200uA

Applications

Leakage detector, Electronic Ballast or protection circuit. General Description Semihow’s SCR product is a single directional PNPN device, has a low gate trigger current and high stability in gate trigger current to temperature, generally suitable for sensing and detection circuits. MCK22-8 Silicon Controlled Rectifier VDRM = 600 V IT(RMS) = 2 A ITSM = 20A IGT = 200uA Symbol Absolute Maximum Ratings (TJ=25℃ unless otherwise specified ) Symbol Parameter Conditions Ratings Unit VDRM Repetitive Peak Off-State Voltage Sine wave, 50/60Hz, Gate open 600 V VRRM Repetitive Peak Reverse Voltage 600 V IT(RMS) R.M.S. On-State Current Full sine wave, TC = 75oC 2 A ITSM Surge On-State Current ½ cycle, 60Hz, Sine wave, Non repetitive 20 A I2t Fusing Current t = 10ms 2 A2S PGM Forward Peak Gate Power Dissipation TJ = 110 °C, pulse width ≤ 1.0us 0.5 W PG(AV) Forward Average Gate Power Dissipation TJ = 110 °C, t = 8.3ms 0.1 W IFGM Forward Peak Gate Current TJ = 110 °C, pulse width ≤ 1.0us 0.2 A VRGM Reverse Peak Gate Voltage TJ = 110 °C, pulse width ≤ 1.0us 5 V TJ Operating Junction Temperature -40~+110 oC TSTG Storage Temperature -40~+150 oC SOT-89 K A G

◎ SEMIHOW REV.A0,Feb 2016 MCK22- 8 Thermal Characteristics Electrical Characteristics (TC=25℃ unless otherwise specified ) Notes : 1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% Symbol Parameter Conditions Min Typ Max Unit IDRM Repetitive Peak Off-State Current VD = VDRM TC=25oC - - 5 uA TC=125oC - - 100 uA IRRM Repetitive Peak Reverse Current VD = VDRM TC=25oC - - 5 uA TC=125oC - - 100 uA IGT Gate Trigger Current VD = 12V, RL=33Ω - 50 200 uA VGT Gate Trigger Voltage VD = 12V, RL=33Ω - 0.6 0.8 V VGD Non-Trigger Gate Voltage1 VD = 12V, RL=33Ω, TJ=110oC 0.2 - - V VTM Peak On-State Voltage IT = 4A - - 1.5 V IL Latching Current IG= 1.2IGT - - 6 mA IH Holding current IT= 0.05A - - 5 mA dv/dt Critical Rate of Rise of Off-State Voltage VD = 2/3 VDRM, TJ=110oC RGK=1KΩ 10 - - V/us Symbol Parameter Conditions Min Typ Max Unit RθJC Thermal Resistance Junction to Case 8.3 oC/W RθJA Thermal Resistance Junction to Ambient 150 oC/W

◎ SEMIHOW REV.A0,Feb 2016 MCK22- 8 Typical Characteristics

◎ SEMIHOW REV.A0,Feb 2016 MCK22- 8 Package Dimension SOT-89-3L