MAS110S

MAS110S DYNEX | Alldatasheet

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APPLICATIONS

l High Frequency High Power Choppers And Inverters. l Ultrasonic Generators. l Welding. l PWM Inverters.

DESCRIPTION

The MAS 110S is a fast thyristor/diode module in an electrically isolated package. The semiconductors are are pressure contact mounted giving high resistance to thermal fatigue, and having excellent heat dissipation qualities. Isolation medium is non-toxic alumina. The MAS110S is recognised under the 'Recognised Component Program of Underwriters Laboratories Inc. USA. File number E151069. VOLTAGE RATINGS KEY PARAMETERS VDRM 1400V ITSM 2000A IT(AV) per arm 110A Visol 2500V tq 10/12/15µs Fig.2 Single circuit Conditions Tvj = 125˚C, IDRM = 50mA, VDSM = VDRM + 100V For full description of part number see 'Ordering Information'. Type Number MAS110S 14 MAS110S 12 MAS110S 10 MAS110S 08 MAS110S 06 Repetitive Peak Off-state Voltage V DRM V 1400 1200 1000 800 600 Outline type code: MAS110S See Package Details for further information. THYRISTOR CURRENT RATINGS Symbol Parameter Conditions Units Max. IT(AV) Mean forward current IT(RMS) RMS value Half wave resistive load, Tcase = 75oC 110 A Tcase = 75oC 175 A G 1 K1 1 2 Fig.1 Package outline (not to scale) MAS110S Fast Turn-off Asymmetric Thyristor/Diode Module Replaces April 1999 version, DS4200-4.0 DS4200-5.0 January 2000

10ms half sine; Tcase = 125oC VR = 0% VDRM Max. UnitsSymbol Parameter ITSM Surge (non-repetitive) on-state current I2tI 2t for fusing 20.0 x 103 A2s 2.0 kA THYRISTOR DYNAMIC CHARACTERISTICS VTM ParameterSymbol Conditions Maximum on-state voltage At 600A peak, T case = 25oC IDRM Peak off-state current At V DRM , Tcase = 125oC dV/dt Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit Min. Max. Units - 2.9 V -7 0 m A - 1000 V/ µs Repetitive 50Hz - 500 A/ µsRate of rise of on-state currentdI/dt From 67% VDRM to 600A, Gate source 20V, 20Ω tr = < 0.5µs, Tj = 125˚C VT(TO) Threshold voltage At T vj = 125oC rT On-state slope resistance At T vj = 125oC 1.6-V - 1.4 m Ω Turn-off timetq µs10- µs12- µs15- IT = 100A, Tj = 125˚C, dIR /dt = 30A/µs, VGK = 0V dV/dt = 20V/µs to 60% VDRM , VR = 1V. tq code: W tq code: S tq code: X

Symbol Parameter Conditions Units Max. IT(AV) Mean forward current IT(RMS) RMS value Half wave resistive load, Tcase = 75oC 112 A Tcase = 75oC 175 A DIODE SURGE RATINGS - PER ARM Conditions 10ms half sine; Tcase = 130oC VR = 0% VRRM Max. UnitsSymbol Parameter IFSM Surge (non-repetitive) forward current I2tI 2t for fusing 61.25 x 103 A2s 3.5 kA Conditions At 600A, Tcase = 25˚C. Max. UnitsSymbol Parameter VFM Forward voltage IRRM Peak reverse current 70 mA 2.65 V At VRRM , Tcase = 125˚C. trr Reverse recovery time 1.3 µsTcase = 125˚C, dIR /dt = -50V/µs, IFM = 200A VTO Threshold voltage 1.6 VAt Tvj = 125˚C. Forward slope resistance 1.5 m ΩAt Tvj = 125˚C.rT DIODE DYNAMIC CHARACTERISTICS THYRISTOR GATE TRIGGER CHARACTERISTICS AND RATINGS VDRM = 12V, Tcase = 25oC ConditionsParameterSymbol VGT Gate trigger voltage V DRM = 12V, Tcase = 25oC, RL = 30Ω IGT Gate trigger current VRGM Peak reverse gate voltage IFGM Peak forward gate current Anode positive with respect to cathode PGM Peak gate power - PG(AV) Mean gate power - 4.0 V - 250 mA - 7.0 V -1 0 A -5 0 W -1 5 W Typ. Max. Units Average timing = 10ms

THERMAL AND MECHANICAL DATA Conditions Min. Max. Units Thermal resistance - junction to case (Thyristor or diode) R th(j-c) Symbol Parameter dc oC/W0.21- Mounting force 6Nm with mounting compound. Thermal resistance - case to heatsink (Thyristor or diode) 0.07- oC/WR th(c-h) 125 oC Tvj Virtual junction temperature Tstg Storage temperature range Visol Isolation voltage - 2.5 kV -40 125 oC -40 - - 125 oC -Top Operating temperature range Commoned terminals to base plate. AC RMS, 1 min, 50Hz. - Mounting torque - 6.0 Nm

ORDERING INFORMATION

The module type number is made up as follows: MAS XXX S XX W Nominal IF(AV) at Tcase = 75˚C Single thyristor/diode configuration Voltage grade. VDRM /100 Turn-off time code Examples: MAS 110 S 12 W MAS 110 S 08 X MODULE MOUNTING RECOMMENDATIONS n Adequate heatsinking is required to maintain the base temperature at 75oC if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information and loss curves in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. n The heatsink surface must be smooth and flat; a surface finish of N6 (32µin) and a flatness within 0.05mm (0.002") are recommended. n Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite™ or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. n An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. n After application of thermal compound, place the module squarely over the mounting holes, (or 'T' slots) in the heatsink. Using a torque wrench, slowly tighten the recommended fixing bolts at each end, rotating each in turn no more than 1/4 of a revolution at a time. Continue until the required torque of 6Nm (55lb.ins) is reached at both ends. n It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module. Pressure contact asymmetric thyristor/diode module

0 2.0 4.0 6.0 8.0 Instantaneous forward voltage VF - (V) 1000 2000 3000 4000 5000Instantaneous forward current IF - (A) Tj = 125˚C 10.0 Instantaneous on-state voltage VT - (V) 500 1000 1500 2000Instantaneous on-state current IT - (A) Tj = 125˚C Fig.3 Maximum (limit) on-state characteristics (thyristor only) Fig.4 Maximum (limit) forward characteristics (diode only)

1.0 10 100 1000 Pulse width tp - (µs) 1.0 100 1000Energy per pulse - (mJ) ITM = 2000A ITM = 1000A ITM = 600A ITM = 400A ITM = 200A ITM = 100A 0.01 0.1 1.0 10 Gate trigger current IGT - (A) 0.1 1.0 100 Gate trigger voltage VGT - (V) Tj = +125˚C Tj = +25˚C Tj = -40˚C PGM = 50W Fig.5 Gate characteristics Fig.6 Sinusoidal energy per pulse (thyristor only)

1.0 10 100 1000 Rate of rise of reverse current dIRR /dt - (A/µs) 1.0 100Recovered charge QR - (C) Tj = 125˚C IFM = 400A IFM = 200A IFM = 100A IFM = 60A IFM = 40A 0.001 0.01 0.1 1.0 Time - (s) 0.01 0.1 1.0 Thermal impedance - (˚C/W) Fig.7 Recovered charge (diode only) Fig.8 Maximum (limit) transient thermal impedance (thyristor only)

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Recommended fixings for mounting: M6 socket head cap screws. Recommended mounting torque: 6Nm (55lb.ins) Recommended torque for electrical connections: 5Nm (44lb.ins) Maximum torques for electrical connections: 8Nm (70lb.ins) Nominal weight: 350g Module outline type code: MP02 23 47 Ø6.5 K1 G 1 12.8 2.8x0.8

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc- tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4200-5 Issue No. 5.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.