MA9264 DYNEX | Alldatasheet
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Technical content
Address input pins which select a particular eight bit word within the memory array. D0-7 Bidirectional data pins which serve as data outputs during a read operation and as data inputs during a write operation. CS Chip Select, which, at low level, activates a read or write operation. When at a high level it defaults the SRAM to a prechargencondition and holds the data output drivers in a high impedance state. WE Write Enable which when at a low level enables a write and holds data output drivers in a high impedance state. When at a high level, it enables a read. OE Output Enable which when at a high level holds the data output drivers in a high impedance state. When at a low level, data output driver state is defined by CS, WE and CE. If this signal is not used it must be connected to VSS. CE Chip Enable which when at a high level allows normal operation. When at a low level it defaults the SRAM to a precharge condition, disables the input circuits on all input pins and holds the data output drivers in a high impedance state. If this signal is not used it must be connected to VDD.
Symbol Parameter Conditions Min. Typ. Max. Units C IN Input Capacitance V l = 0V - 3 5 pF C OUT Output Capacitance V I/O = 0V - 5 7 pF Note: TA = 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured. Figure 8: Capacitance Symbol Parameter Conditions FT Basic Functionality V DD = 4.5V - 5.5V, FREQ = 1MHz VIL = VSS , VIH = VDD , VOL ≤ 1.5V, VOH ≥ 1.5V TEMP = -55°C to +125°C, GPS PATTERN SET GROUP A SUBGROUPS 7, 8A, 8B Figure 9: Functionality Subgroup Definition
1 Static characteristics specified in Tables 4 and 5 at +25°C
2 Static characteristics specified in Tables 4 and 5 at +125°C
3 Static characteristics specified in Tables 4 and 5 at -55°C
7 Functional characteristics specified in Table 9 at +25°C
8A Functional characteristics specified in Table 9 at +125°C 8B Functional characteristics specified in Table 9 at -55°C
9 Switching characteristics specified in Tables 6 and 7 at +25°C
10 Switching characteristics specified in Tables 6 and 7 at +125°C
11 Switching characteristics specified in Tables 6 and 7 at -55°C
Figure 10: Definition of Subgroups
Figure 12: Write Cycle ADDRESS TAVAVW TAVWH TAVWL TWLWH (2) TWHAV (3) (4) TWLQZ WE TAXQX TWLQX DATA OUT (6) (7) HIGH IMPEDANCE DATA VALIDDATA IN TDVWH TWHDX TSLWH TEHWH CS CE (5) (8) 1. WE must be high during all address transitions. 2. A write occurs during the overlap (TWLWH ) of a low CS, a high CE and a low WE. 3. TWHAV is measured from either CS or WE going high or CE going low, whichever is the earlier, to the end of the write cycle. 4. If the CS low or CE high transition occurs simultaneously with, or after, the WE low transition, the output remains in the high impedance state. 5. DATA OUT is in the active state, so DATA IN must not be in the opposing state. 6. DATA OUT is the write data of the current cycle, if selected. 7. DATA OUT is the read data of the next address,if selected. OE is low. (If OE is high then DATA OUT remains in the high impedance state throughout the cycle).
TYPICAL PERFORMANCE CHARACTERISTICS MAx9264x70
OUTLINES AND PIN ASSIGNMENTS Figure 13: 28-Lead Ceramic DIL (Solder Seal) - Package Style C D W A e b Z H A 1 15° M E C Seating Plane 114 2815
28 VCC
23 A11
21 A10
19 D/Q7
18 D/Q6
17 D/Q5
16 D/Q4
15 D/Q3
A1 0.38 - 1.53 0.015 - 0.060 b 0.35 - 0.59 0.014 - 0.023 c 0.20 - 0.36 0.008 - 0.014 e1 - 15.24 Typ. - - 0.600 Typ. - H 4.71 - 5.38 0.185 - 0.212 XG404
Figure 14: 28-Lead Ceramic Flatpack (Solder Seal) - Package Style F Ref Millimetres Inches b 0.38 - 0.48 0.015 - 0.019 c 0.10 - 0.18 0.004 - 0.007 D 18.08 - 18.49 0.712 - 0.728 L 7.62 - 9.91 0.300 - 0.390 M 12.50 - 12.09 0.492 - 0.508 XG530 M b e D L A Q c Pin 1 Z M E 1N C
2 A12
11 D/Q0
12 D/Q1
13 D/Q2
14 GND
GND(VSS) 14 Direct 0V 0V 0V 0V D/Q3 15 R 5V 0V F1 5V D/Q4 16 R 5V 0V F1 5V D/Q5 17 R 5V 0V F1 5V D/Q6 18 R 5V 0V F1 5V D/Q7 19 R 5V 0V F1 5V CSB 20 R 5V 0V F15 5V A10 21 R 5V 0V F2 5V OEB 22 R 5V 0V F15 5V A11 23 R 5V 0V F6 5V A9 24 R 5V 0V F13 5V A8 25 R 5V 0V F12 5V CE 26 R 5V 0V F15B 5V WB 27 R 5V 0V F0 5V VDD 28 Direct 5V 5V 5V 5V 1. F0=150KHz, F1=F0/2, F2=F0/4, F3=F0/8 etc. 2. Static 1, Static 2 and Dynamic: R=4k7. 3. Radiation: R=10k. Figure 15: Burnin and Radiation Configuration
ORDERING INFORMATION
For details of reliability, QA/QC, test and assembly options, see ‘Manufacturing Capability and Quality Assurance Standards’ Section 9. Unique Circuit Designator S R Q Radiation Hard Processing 100 kRads (Si) Guaranteed 300 kRads (Si) Guaranteed For radiation levels above those stated please contact Marketing Radiation Tolerance C F L N Ceramic DIL (Solder Seal) Flatpack (Solder Seal) Leadless Chip Carrier Naked Die Package Type QA/QCI Process (See Section 9 Part 4) Test Process (See Section 9 Part 3) Assembly Process (See Section 9 Part 2) L C D E B S Rel 0 Rel 1 Rel 2 Rel 3/4/5/STACK Class B Class S Reliability Level MAx9264xxxxxxxx T C TTL CMOS 70ns Speed 95ns Speed CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS3692-7 Issue No. 7.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand.