LR014N

LR014N VBSEMI | Alldatasheet

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Technical content

N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET ® Power MOSFET 1 0 0 % Rg and UIS Tested  Materia l ca tegorization: For definitions of compliance please see

APPLICATIONS

 DC/DC Converters  DC/AC Inverters  Motor Drives Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Base on TC = 25 °C. PRODUCT SUMMARY VDS (V) R DS(on) () Max. I D (A) Q g (Typ.) 0.073 at VGS = 10 V 18.2 19.8 0.085 at VGS = 4.5 V 13.2 TO-252 SG D Drain Connected to Tab N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless o therwise noted) Parameter Symbol Limit Unit Dr ain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID 16.9 A TC = 70 °C 13.6 Pulsed Drain Current (t = 300 µs) IDM 25 Avalanche Current IAS 15 Single Avalanche Energya L = 0.1 mH EAS 11.25 mJ Maximum Powe r Dissipationa TC = 25 °C PD 41.7b W TA = 25 °Cc 2.1 Operating Junction and Storage T emperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit U nit Junction-to-Ambient (PCB Mount)c RthJA 60 °C/W Junction-to-Case (Drain) RthJC 3 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw LR014N A ll data sheet.com

Notes: a. Pulse test; pulse wi dth  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Abs olute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless ot herwise noted) Parameter Symbol Test Conditio ns Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS VGS = 0 V, ID = 250 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA Zero Gate Voltage Dr ain Current IDSS VDS = 60 V, V GS = 0 V 1 µAVDS = 60 V, V GS = 0 V, TJ = 125 °C 50 VDS = 60 V, V GS = 0 V, TJ = 150 °C 250 On-State Drain Currenta ID(on) V DS 10 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 6.6 A 0.073 VGS = 4.5 V, ID = 6 A 0.083 Forward Transconductancea gfs VDS = 15 V, ID = 6.6 A 25 S Dynamicb Input Capacitance Ciss VDS = 30 V, VGS = 0 V, f = 1 MHz 860 pFOutput Capacitance Coss 85 Reverse Transfer Capacitance Crss 40 Total Gate Chargec Qg VDS = 30 V, VGS = 10 V, ID = 6.6 A 19.8 30 nCGate-Source Chargec Qgs 3.6 Gate-Drain Chargec Qgd 4.1 Gate Resistance Rg f = 1 MHz 0.4 2 4  Tur n- On Delay Timec td(on) VDD = 30 V, RL = 9.6  ID  5.2 A, VGEN = 10 V, Rg = 1  81 6 ns Rise Timec tr 11 20 Turn-Off Delay Timec td(off) 18 27 Fall Timec tf 51 0 Tur n-On De lay Timec td(on) VDD = 30 V, RL = 9.6  ID  5.2 A, VGEN = 4.5 V, Rg = 1  38 57 Rise Timec tr 58 87 Turn-Off Delay Timec td(off) 18 27 Fall Timec tf 81 6 Drain-Source Body Diod e Ratings and Characteristicsb TC = 25 °C Continuous Current IS 16.9 A Pulsed Current ISM 25 Forward Voltagea VSD IF = 5.2 A, VGS = 0 V 0.8 1.5 V Reverse Recov ery Time trr IF = 5.2 A, dI/dt = 100 A/µs 34 51 ns Peak R everse Recovery Current I RM(REC) 35A Reverse Recovery Charge Qrr 50 75 nC E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw LR014N A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transfer Characteristics Tra nsconductance 0 0.5 1 1.5 2 ID - Drain Current (A) VDS - Drain-to-Source Vol tage (V) VGS = 10 V thru 7 V VGS = 3 V VGS = 4 V 0 1 2 3 4 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 3 6 9 12 gfs - Transconductance (S) ID - Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C On-Resistance vs. Drain Curren t On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.04 0.06 0.07 0.08 0.09 0.10 0 5 10 15 20 25 RDS(on) - On-Resistance (Ω) ID - Drain Current (A VGS =4.5V VGS = 10 V 0.03 0.06 0.09 0.12 0.15 2 4 6 8 10 RDS(on) - On-Resistan ce (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 6.6 A 0 6 12 18 24 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 40 V VDS = 15 V VDS = 30 V ID = 6.6 A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw LR014N A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless o therwise noted) Source-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 100 IS - Source Current (A) VSD - Source-to-Dr ain Voltage (V) TJ = 150 °C TJ = 25 °C 250 500 750 1000 1250 0 20 40 60 80 100 C - Capacitance (pF) VDS - Drain-to-Sou rce Voltage (V) Ciss Coss Crss 0.45 0.9 1.35 1.8 2.25 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-Resistance (Normalized) TJ - Junction Temperature (°C) VGS = 4.5 V, ID = 6 A VGS = 10 V, ID = 6.6 A Threshold Voltage Drain Source Breakdown vs. Junction Temperature Current Derating 1.2 1.5 1.8 2.1 2.4 2.7 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ - Temperatu re (°C) ID = 250 μA 102 107 112 117 122 127 - 50 - 25 0 25 50 75 100 125 150 VDS (V) Drain-to-Source Voltage TJ - Temperature (°C) ID = 250 μA 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw LR014N A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Single Pulse Avalanche Current Capability vs. Time IDAV (A) Time (s) TJ = 25 °C TJ = 150 °C Safe Operating Area 0.01 0.1 100 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Vol tage (V) * VGS > minimum VGS at which RDS(on) is specified DC, 10 s 1 s, 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs Normalized Thermal Transient Impedance , Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 11 010-1 Normalized Effective Transient Ther mal Impedance 0.2 0.1 Duty Cycle = 0.5 0.02 0.05 Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw LR014N A ll data sheet.com

• Dimension L3 is for re f erence only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw LR014N A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR DPAK (T O-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to Index E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw LR014N A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw LR014N A ll data sheet.com