L6203

L6203 SYC | Alldatasheet

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Technical content

5A MAX PEAK CURRENT (2A max. for L6201) TOTAL RMS CURRENT UP TO L6201: 1A; L6202: 1.5A; L6203/L6201PS: 4A R DS (ON) 0.3 Ω (typical value at 25 °C) CROSS CONDUCTION PROTECTION TTL COMPATIBLE DRIVE OPERATING FREQUENCY UP TO 100 KHz THERMAL SHUTDOWN INTERNAL LOGIC SUPPLY HIGH EFFICIENCY

DESCRIPTION

The I.C. is a full bridge driver for motor control ap- plications realized in Multipower-BCD technology which combines isolated DMOS power transistors with CMOS and Bipolar circuits on the same chip. By using mixed technology it has been possible to optimize the logic circuitry and the power stage to achieve the best possible performance. The DMOS output transistors can operate at supply voltages up to 42V and efficiently at high switch- ing speeds. All the logic inputs are TTL, CMOS and µC compatible. Each channel (half-bridge) of the device is controlled by a separate logic input, while a common enable controls both channels. The I.C. is mounted in three different packages. This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice. July 2003 MULTIPOWER BCD TECHNOLOGY BLOCK DIAGRAM ORDERING NUMBERS: L6201 (SO20) L6201PS (PowerSO20) L6202 (Powerdip18) L6203 (Multiwatt) SO20 (12+4+4) Multiwatt11 Powerdip 12+3+3 PowerSO20 L6203 FULL BRIDGE DRIVER www.sycelectronica.com.ar

Name FunctionL6201 L62 01PS L6202 L 6203 1 16 1 10 SENSE A resistor R sense connected to this pin provides feedback for motor current control. 2 17 2 11 ENAB LE When a logic high is present on this pin the DMOS POWER transistors are enabled to be selectively driven by IN1 and IN2. 3 2,3,9,12, 18,19 3 N.C. Not Connected 4,5 – 4 GND Common Ground Terminal – 1, 10 5 GND Common Ground Terminal 6,7 – 6 GND Common Ground Terminal 8 – 7 N.C. Not Connected 9 4 8 1 OUT2 Ouput of 2nd Half Bridge 10 5 9 2 V s Supply Voltage 11 6 10 3 OUT1 Output of first Half Bridge 12 7 11 4 BOOT1 A boostrap capacitor connected to this pin ensures efficient driving of the upper POWER DMOS transistor. 13 8 12 5 IN1 Digital Input from the Motor Controller 14,15 – 13 GND Common Ground Terminal – 11, 20 14 GND Common Ground Terminal 16,17 – 15 GND Common Ground Terminal 18 13 16 7 IN2 Digital Input from the Motor Controller 19 14 17 8 BOOT2 A boostrap capacitor connected to this pin ensures efficient driving of the upper POWER DMOS transistor. 20 15 18 9 V ref Internal voltage reference. A capacitor from this pin to GND is recommended. The internal Ref. Voltage can source out a current of 2mA max. Symbol Parameter Value Unit Vs Power Supply 52 V VOD Differential Output Voltage (between Out1 and Out2) 60 V VIN, VEN Input or Enable Voltage – 0.3 to + 7 V Io Pulsed Output Current for L6201PS/L6202/L6203 (Note 1) – Non Repetitive (< 1 ms) for L6201 for L6201PS/L6202/L6203 DC Output Current for L6201 (Note 1) A A A A Vsense Sensing Voltage – 1 to + 4 V Vb Boostrap Peak Voltage 60 V Ptot Total Power Dissipation: Tpins = 90°C for L6201 for L6202 Tcase = 90°C for L6201PS/L6203 Tamb = 70°C for L6201 (Note 2) for L6202 (Note 2) for L6201PS/L6203 (Note 2) 0.9 1.3 2.3 W W W W W W T stg, Tj Storage and Junction Temperature – 40 to + 150 °C Note 1: Pulse width limited only by junction temperature and transient thermal impedance (see thermal characteristics) Note 2: Mounted on board with minimized dissipating copper area. ABSOLUTE MAXIMUM RATINGS L6201 - L6202 - L6203 www.sycelectronica.com.ar

Symbol Parameter Value Unit L6201 L6201PS L6202 L6203 Rth j-pins Rth j-case Rth j-amb Thermal Resistance Junction-pins max Thermal Resistance Junction Case max. Thermal Resistance Junction-ambient max. 13 (*) °C/W (*) Mounted on aluminium substrate. ELECTRICAL CHARACTERISTICS (Refer to the Test Circuits; Tj = 25°C, VS = 42V, Vsens = 0, unless otherwise specified). Symbol Parameter Test Conditions Min. Typ. Max. Unit Vs Supply Voltage 12 36 48 V Vref Reference Voltage I REF = 2mA 13.5 V IREF Output Current 2m A Is Quiescent Supply Current EN = H V IN = L EN = H VIN = H EN = L ( Fig. 1,2,3) IL = 0 mA mA mA f c Commutation Frequency (*) 30 100 KHz Tj Thermal Shutdown 150 °C Td Dead Time Protection 100 ns TRANSISTORS OFF IDSS Leakage Current Fig. 11 V s = 52 V 1 mA ON R DS On Resistance Fig. 4,5 0.3 0.55 Ω VDS(ON) Drain Source Voltage Fig. 9 IDS = 1A IDS = 1.2A IDS = 3A L6201 L6202 L6201PS/0 0.3 0.36 0.9 V V V V sens Sensing Voltage – 1 4 V SOURCE DRAIN DIODE Vsd Forward ON Voltage Fig. 6a and b ISD = 1A L6201 EN = L ISD = 1.2A L6202 EN = L ISD = 3A L6201PS/03 EN = L 0.9 () 0.9 () 1.35(**) V V V trr Reverse Recovery Time dif dt = 25 A/µs IF = 1A IF = 1.2A IF = 3A L6201 L6202 L6203 300 ns t fr Forward Recovery Time 200 ns LOGIC LEVELS VIN L, VEN L Input Low Voltage – 0.3 0.8 V VIN H, VEN H Input High Voltage 2 7 V IIN L, IEN L Input Low Current V IN, VEN = L –10 µA IIN H, IEN H Input High Current V IN, VEN = H 30 µA L6201 - L6202 - L6203 www.sycelectronica.com.ar

To ensure that the POWER DMOS transistors are driven correctly gate to source voltage of typ. 10 V must be guaranteed for all of the N-channel DMOS transistors. This is easy to be provided for the lower POWER DMOS transistors as their sources are refered to ground but a gate voltage greater than the supply voltage is necessary to drive the upper transistors. This is achieved by an internal charge pump circuit that guarantees cor- rect DC drive in combination with the boostrap cir- cuit. For efficient charging the value of the boos- trap capacitor should be greater than the input capacitance of the power transistor which is around 1 nF. It is recommended that a capaci- tance of at least 10 nF is used for the bootstrap. If a smaller capacitor is used there is a risk that the POWER transistors will not be fully turned on and they will show a higher RDS (ON). On the other hand if a elevated value is used it is possible that a current spike may be produced in the sense re- sistor. Reference Voltage To by-pass the internal Ref. Volt. circuit it is rec- ommended that a capacitor be placed between its pin and ground. A value of 0.22 µF should be suf- ficient for most applications. This pin is also pro- tected against a short circuit to ground: a max. current of 2mA max. can be sinked out. Dead Time To protect the device against simultaneous con- duction in both arms of the bridge resulting in a rail to rail short circuit, the integrated logic control provides a dead time greater than 40 ns. Thermal Protection A thermal protection circuit has been included that will disable the device if the junction tempera- ture reaches 150 °C. When the temperature has fallen to a safe level the device restarts the input and enable signals under control.

APPLICATION INFORMATION

During recirculation with the ENABLE input high, the voltage drop across the transistor is RDS (ON)⋅ IL, clamped at a voltage depending on the characteristics of the source-drain diode. Al- though the device is protected against cross con- duction, current spikes can appear on the current sense pin due to charge/discharge phenomena in the intrinsic source drain capacitances. In the ap- plication this does not cause any problem be- cause the voltage spike generated on the sense resistor is masked by the current controller circuit. Rise Time T r (See Fig. 16) When a diagonal of the bridge is turned on cur- rent begins to flow in the inductive load until the maximum current I L is reached after a time Tr. The dissipated energy EOFF/ON is in this case : EOFF/ON = [RDS (ON) ⋅ IL2 ⋅ Tr] ⋅ 2/3 Load Time TLD (See Fig.16) During this time the energy dissipated is due to the ON resistance of the transistors (ELD ) and due to commutation (ECOM ). As two of the POWER DMOS transistors are ON, EON is given by : ELD = IL2 ⋅ RDS (ON) ⋅ 2 ⋅ TLD In the commutation the energy dissipated is : ECOM = VS ⋅ IL ⋅ TCOM ⋅ fSWITCH ⋅ TLD Where : TCOM = TTURN-ON = TTURN-OFF fSWITCH = Chopping frequency. Fall Time Tf (See Fig. 16) It is assumed that the energy dissipated in this part of the cycle takes the same form as that shown for the rise time : EON/OFF = [RDS (ON) ⋅ IL2 ⋅ Tf] ⋅ 2/3 Figure 16. L6201 - L6202 - L6203 www.sycelectronica.com.ar