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Document overview
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- PDF pages: 5
Technical content
Features
- VCBO = 1050V
- VCEO = 500V
- VBEO = 15V
- IC = 2A
Ordering Information
Collector-Base Voltage V CBO 1050 V Collector-Emitter Voltage V CEO 500 V Emitter-Base Voltage V EBO 15 V Collector Current(DC) I C 2A Collector Current(Pulse) I CP 4A Base Current I B 1A Collector Dissipation(Tc=25) PC 30 60 W Junction Temperature T J 150 Storage Temperature T STG -65~150 Absolute Maximum Ratings TC=25 unless otherwise noted Electrical Characteristics (1) TC=25 unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit Collector-Base Breakdown Voltage V CBO IC=500ȝA, IE=0 1050 V Collector-Emitter Breakdown Voltage V CEO IC=5mA, IB=0 500 V Emitter-Base Breakdown Voltage V EBO IE=1mA, IC=0 15 19 24 V Emitter Cut-off Current I EBO VEB=15V,IC=0 1 ᒻ DC Current Gain h FE1 hFE2 VCE=5V,IC=100mA VCE=3V,IC=450mA 70 100 Collector-Emitter Saturation Voltage V CE(sat) I C=0.7A,IB=0.14A IC=2.0A,IB=0.6A 0.5 3.0 V V Base-Emitter Saturation Voltage V BE(sat) I C=2.0A,IB=0.6A 1.5 V Output Capacitance C ob VCB=10V, f=0.1MHz 23 ᓂ Storage Time t stg Ic=500mA, IB=10mA (UI9600) 26 ᓪ KSD741 KSP741 NPN Silicon Power Transistor, VCBO= 1050V, VCEO= 500V, IC= 2A Notes ; 1. Pulse Test: Pulse Width ȝV'XW\\&\\FOH
{vTY\\YG
9.19±0.20 ij ±0.20 9.90±0.20 2.80±0.20 3.02±0.20 2.54typ 6.50±0.20 0.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 4.50±0.20 0.50±0.20 2.40±0.20 2.54typ {vTYYWG Dimensions in Millimeters