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Technical content

Features

  • VCBO = 800V
  • VCEO = 450V
  • VBEO = 9V
  • IC = 1.5A

NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A CHARACTERISTICS SYMBOL RATING UNIT TO-92 TO-251 Collector-Base Voltage V CBO 800 V Collector-Emitter Voltage V CEO 450 V Emitter-Base Voltage V EBO 9V Collector Current(DC) I C 1.5 A Collector Current(Pulse) I CP 3A Base Current I B 0.75 A Collector Dissipation(Tc=25୅) PC 1.1 25 W Junction Temperature T J 150 ୅ Storage Temperature T STG -65~150 ୅ Absolute Maximum Ratings TC=25୅ unless otherwise noted Electrical Characteristics TC=25୅ unless otherwise noted * Pulse Test: Pulse Width”ȝV'XW\\&\\FOH” CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit Collector-Base Breakdown Voltage V CBO IC=500ȝA, IE=0 800 V Collector-Emitter Breakdown Voltage V CEO IC=10mA, IB=0 450 V Emitter Cut-off Current I EBO VEB=9V,IC=0 1 ᒻ *DC Current Gain h FE1 hFE2 VCE=5V,IC=0.2A VCE=5V,IC=1A *Collector-Emitter Saturation Voltage V CE(sat) I C=0.5A,IB=0.1A 0.8 V *Base-Emitter Saturation Voltage V BE(sat) I C=0.5A,IB=0.1A 1.2 V Output Capacitance C ob VCB=10V, f=0.1MHz 21 ᓂ Current Gain Bandwidth Product f T VCE=10V,IC=0.1A 4 ᓊ Turn on Time t on Vcc=125V, Ic=2A IB1=0.2A, IB2= -0.2A RL=125ȍ 1.1 ᓪ Storage Time t stg 4.0 ᓪ Fall Time t F 0.7 ᓪ

Figure 7. Power Derating

4.58±0.25 3.71±0.2 0.46±0.1 1.27typ 1.27typ 1.02±0.1 3.71±0.25 3.6±0.25 4.58±0.2514.47±0.5 Dimensions in Millimeters {vT\`YG Package Dimension

H P P2F1 F2 P1 W0 W2 W Item Symbol ͵ΚΞΖΟΤΚΠΟ͑ΌΞΞΎ ΃ΖΗΖΣΖΟΔΖ ΅ΠΝΖΣΒΟΔΖ Side lead to center of feed hole P1 ͤͩͦ͟ ρͦ͟͡ Center lead to center of feed hole P2 ͧͤͦ͟ ρͦ͟͡ Adhesive tape width W0 ͧ͟͡ ρͦ͟͡ Tape feed hole location W1 ͪ͟͡ ρͦ͟͡ Adhesive tape position W2 ͑͑͢͟͡;ͲΉ Component height H1 ͣͨ͑͟͡ΞΒΩ Tape feed hole diameter D0 ͥ͟͡ ρͣ͟͡ {vT\`YG{hwpunG Package Dimension

5.35±0.15 6.6±0.2 0.75±0.15 2.3typ 2.3typ 5.6±0.2 7±0.27.5±0.3 0.6±0.1 2.3±0.1 0.5±0.05 1.2±0.3 0.5+0.1 -0.05 0.8±0.15 {vTY\\XG ^U_·WU[G Dimensions in Millimeters