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◎ SEMIHOW REV.A1,Dec 2011 KSH1408F KSH1408F
◎ SEMIHOW REV.A1,Dec 2011 KSH1408F Switch Mode series NPN Epitaxial silicon Power Transistor - Low voltage, high speed power switching - Suitable for switching regulator, inverters motor controls KSH1408F CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Max. Operating Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP IB PC TJ TSTG 0.4 150 -65~150 V V V A A A W
4 Amperes
NPN Silicon Power Transistor
25 Watts Absolute Maximum Ratings TC=25℃ unless otherwise noted
CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit Collector-Emitter Breakdown Voltage VCEO IC=50mA, IB=0 80 V Collector Cut-off Current ICBO VCB=80V,IE=0 30 uA Emitter Cut-off Current IEBO VEB=5V,IC=0 10 uA *DC Current Gain hFE1 hFE2 VCE=5V,IC=0.5A VCE=5V,IC=3A 240 *Collector-Emitter Saturation Voltage V CE(sat) IC=3A,IB=0.3A 2 V *Base-Emitter Saturation Voltage VBE(sat) IC=3A,IB=0.3A 1.5 V Output Capacitance Cob VCB=10V, f=1MHz 90 ㎊ Current Gain Bandwidth Product fT VCE=5V, IC=0.5A 8 ㎒ Electrical Characteristics TC=25℃ unless otherwise noted * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% TO-220F 1. Base 2. Collector 3. Emitter hFE1 Classification R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 Note. S YWW Z KSH1408F S SemiHow Symbol YWW Y; year code, WW; week code Z hFE1 Classification Package Mark information. 1 2 3
◎ SEMIHOW REV.A1,Dec 2011 KSH1408F Package Dimension 0.70±0.20 ±0.20 3.30±0.20 15.87±0.20 12.42±0.20 2.54typ 6.68±0.20 0.80±0.20 1.47max 2.54±0.20 ±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75±0.20 φ3.18 ±0.20 TO-220F