KSH13009F SEMIHOW | Alldatasheet
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Technical content
◎ SEMIHOW REV.A1,Oct 2007
Switch Mode series NPN silicon Power Transistor KSH13009F Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage Collector Emitter Voltage VCBO V 700 400 V V Absolute Maximum Ratings TC=25℃ unless otherwise noted TO-220F 1. Base 2. Collector 3. Emitter
12 Amperes
NPN Silicon Power Transistor
100 Watts
Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature VCEO VEBO IC ICP IB PC TJ TSTG 400 150 -65~150 V V A A A W 1 2 3 CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit Collector-Emitter Sustaining Voltage V CEO(sus) I C=10mA, IB=0 400 V Emitter Cut-off Current I EBO VEB=9V,IC=0 1 ㎃ *DC Current Gain h FE1 hFE2 VCE=5V,IC=5A VCE=5V,IC=8A Electrical Characteristics TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit Collector-Emitter Sustaining Voltage V CEO(sus) I C=10mA, IB=0 400 V Emitter Cut-off Current I EBO VEB=9V,IC=0 1 ㎃ *DC Current Gain h FE1 hFE2 VCE=5V,IC=5A VCE=5V,IC=8A 30hFE2 VCE 5V,IC 8A 6 30 *Collector-Emitter Saturation Voltage V CE(sat) I C=5A,IB=1A IC=8A,IB=1.6A IC=12A,IB=3A 1.5 V V V *Base-Emitter Saturation Voltage V BE(sat) I C=5A,IB=1A IC=8A,IB=1.6A 1.2 1.6 V V Output Capacitance C ob VCB=10V, f=0.1MHz 180 ㎊ Current Gain Bandwidth Product f T VCE=10V,IC=0.5A 4 ㎒ hFE2 VCE 5V,IC 8A 6 30 *Collector-Emitter Saturation Voltage V CE(sat) I C=5A,IB=1A IC=8A,IB=1.6A IC=12A,IB=3A 1.5 V V V *Base-Emitter Saturation Voltage V BE(sat) I C=5A,IB=1A IC=8A,IB=1.6A 1.2 1.6 V V Output Capacitance C ob VCB=10V, f=0.1MHz 180 ㎊ Current Gain Bandwidth Product f T VCE=10V,IC=0.5A 4 ㎒T CE , C Turn on Time t on Vcc=125V, Ic=8A IB1=1.6A, IB2= -1.6A RL=15.6Ω 1.1 ㎲ Storage Time t stg 3 ㎲ Fall Time t F 0.7 ㎲ * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% S S SemiHow Symbol Package Mark information. R8 ~ 1 7 Note. T CE , C Turn on Time t on Vcc=125V, Ic=8A IB1=1.6A, IB2= -1.6A RL=15.6Ω 1.1 ㎲ Storage Time t stg 3 ㎲ Fall Time t F 0.7 ㎲ Note. ◎ SEMIHOW REV.A1,Oct 2007 YWW Z KSH13009F YWW Y; year code, WW; week code Z hFE1 Classification hFE1 Classification O 15~28 Y 26 ~ 39
◎ SEMIHOW REV.A1,Oct 2007
Typical Characteristics ( Continued ) ◎ SEMIHOW REV.A1,Oct 2007
±0.20 ±0 20 TOTO--220F220F 0.70±0.20 ±0.20 68±0.20 2.54±0.20 ±0.20 φ3.18 ±0.20 3.30±0.20 15.87±0.20 2.42±0.20 6.612 1.47max 2.76±0.20 .75±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A1,Oct 2007 Dimensions in Millimeters