KSE772 SEMIHOW | Alldatasheet
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◎ SEMIHOW REV.A1,Sept 2007 KSE772 KSE772
◎ SEMIHOW REV.A1,Sept 2007 KSE772 Audio Frequency Power Amplifier - Low Speed Switching - Complement to KSE882 KSE772 CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) *Collector Current(Pulse) Base Current(DC) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature V CBO VCEO VEBO IC ICP IB PC TJ TSTG -40 -30 -5.0 -3.0 -7.0 -0.6 1.2 150 -55~150 V V V A A A W
3 Amperes
PNP Epitaxial Silicon Transistor
1.2 Watts
Absolute Maximum Ratings TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit Collector Cut-off Current ICBO VCB= -30V,IE=0 -1 μA Emitter Cut-off Current IEBO VEB= -3V,IC=0 -1 μA *DC Current Gain hFE1 hFE2 VCE= -2V,IC= -20mA VCE= -2V,IC= -1A 220 160 400 *Collector-Emitter Saturation Voltage V CE(sat) IC= -2A,IB= -0.2mA -0.3 -0.5 V *Base-Emitter Saturation Voltage VBE(sat) IC= -2A,IB= -0.2mA -1.0 -2.0 V Current Gain Bandwidth Product fT VCE= -5V,IC= -0.1A 80 MHz Output Capacitance Cob VCB= -10V,IE=0 F=1MHz 55 ㎊ Electrical Characteristics TC=25℃ unless otherwise noted * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% SOT-89 1. Base 2. Collector 3. Emitter *Plus Width≤10ms, Duty≤50% B C E hFE2 Classification R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 G 250 ~ 500 Note. H772Y YWWG Y hFE2 Classification YWW Y; year code, WW; week code G Assembly code Package Mark information.
◎ SEMIHOW REV.A1,Sept 2007 KSE772 Typical Characteristics
◎ SEMIHOW REV.A1,Sept 2007 KSE772 Typical Characteristics ( Continued )
◎ SEMIHOW REV.A1,Sept 2007 KSE772 Package Dimensions Dimensions in Millimeters SOT-89 4.5±0.2 1.4±0.1 1.6±0.1 0.7typ2.5±0.2 4.15±0.2 0.38±0.03 1.5±0.2 5°typ 1.5typ 1.5typ 0.46±0.06 (1.10)