KDG25R12KE3

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Features：  IGBT Inverter Short Circuit Rated 10μs  IGBT Inverter Low Saturation Voltage  Low Switching Loss  Low Stray Inductance  Lead Free, Compliant With RoHS Requirement Applications：  Industrial Inverters  Servo Applications IGBT-Inverter Absolute Maximum Ratings (TC = 25℃ unless otherwise specified) Symbol Description Value Units VCES Collector-Emitter Blocking Voltage 1200 V VGES Gate-Emitter Voltage ± 20 V IC Continuous Collector Current TC = 80℃ 25 A TC = 25℃ 50 A ICM(1) Peak Collector Current Repetitive TJ = 125℃ 50 A tSC Short Circuit Withstand Time TJ = 150℃ >10 μs PD Maximum Power Dissipation (IGBT) TC = 25℃ TJmax=150℃ 220 W Characteristic Values (TJ = 25℃ unless otherwise specified) Symbol Description Test Conditions Min. Typ. Max. Units ICES Collector-Emitter Leakage Current VGE=0V,VCE =VCES TJ = 25℃ 1 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE= 0V TJ = 25℃ 200 nA VGE(th) Gate-Emitter Threshold Voltage IC = 1 mA, VCE = VGE 5.3 6.5 V VCE(sat) Collector-Emitter Saturation Voltage IC=25A ,VGE = 15V TJ = 25℃ 1.90 2.10 V TJ = 125℃ 2.20 V Cies Input Capacitance VCE = 25V, VGE = 0V , f ＝1MHz 3.4 nF Coes Output Capacitance 0.20 nF Internal Circuit Diagram

td(on) Turn-on Delay Time VCC = 600V, IC = 25A, RG = 20Ω, VGE =± 15V , Inductive Load, TJ = 25℃ 90 ns tr Rise Time 50 ns td(off) Turn-off Delay Time 260 ns tf Fall Time 225 ns Eon Turn-on Switching Loss 2.41 mJ Eoff Turn-off Switching Loss 1.26 mJ Ets Total Switching Loss 3.67 mJ td(on) Turn-on Delay Time VCC = 600V, IC = 25A, RG = 20Ω, VGE =± 15V, Inductive Load, TJ= 125℃ 85 ns tr Rise Time 50 ns td(off) Turn-off Delay Time 265 ns tf Fall Time 365 ns Eon Turn-on Switching Loss 2.95 mJ Eoff Turn-off Switching Loss 2.02 mJ Ets Total Switching Loss 4.97 mJ Qg Total Gate Charge VCE = 600V, IC = 25A, VGE = -15V ~ +15V 515 nC RBSOA Reverse Bias Safe Operating Area IC = 50A ,VCC = 960V,Vp =1200V, Rg = 4.7Ω, VGE = +15V to 0V, TJ =150° C Trapezoid SCSOA Short Circuit Safe Operating Area VCC = 600V, VGE = 15V, TJ = 150℃ 10 μs Diode-Inverter Absolute Maximum Ratings (TC = 25℃ unless otherwise specified) Symbol Description Value Units VRRM Repetitive Peak Reverse Voltage 1200 V IF DC Forward Current 25 A IFRM Repetitive Peak Forward Current 50 A Characteristic Values Symbol Description Conditions Min. Typ. Max. Units VF Forward Voltage IF＝25A, VGE = 0V TJ = 25℃ 2.0 V TJ = 150℃ 2.2 Irr Peak Reverse Recovery Current IF＝25A, di/dt = 815A/μs, Vrr = 600V, VGE = -15V TJ = 25℃ 25 A TJ = 125℃ 30 Qrr Recovered Charge TJ = 25℃ 1.18 µC TJ = 125℃ 1.88 Erec Reverse Recovery Energy TJ = 25℃ 0.52 mJ TJ = 125℃ 0.97

Absolute Maximum Ratings (TC = 25℃ unless otherwise specified) Symbol Description Value Units VRRM Repetitive Peak Reverse Voltage TJ =25℃ 1800 V IFRMSM Forward Current RMS Maximum Per Diode TJ =80℃ 35 A IRMSmax Maximum RMS Current At Rectifier Output TJ =80℃ 45 A IFSM Surge Current @tp=10 ms TJ =25℃ 280 A TJ =125℃ 250 I2t tp=10 ms TJ =25℃ 500 A2s TJ =125℃ 370 Characteristic Value Symbol Description Conditions Min. Typ. Max. Units VF Forward Voltage IF＝25A TJ = 25℃ 1.0 1.1 V TJ = 125℃ 1.0 IGBT-Brake-Chopper Absolute Maximum Ratings (TC = 25℃ unless otherwise specified) Symbol Description Value Units VCES Collector-Emitter Blocking Voltage 1200 V VGES Gate-Emitter Voltage ± 20 V IC Continuous Collector Current TC = 80℃ 15 A TC = 25℃ 30 A ICM(1) Peak Collector Current Repetitive TJ = 150℃ 30 A PD Maximum Power Dissipation (IGBT) TC = 25℃ TJmax=150℃ 180 W Characteristic Values Symbol Description Test Conditions Min. Typ. Max. Units ICES Collector-Emitter Leakage Current VGE=0V,VCE =VCES TJ = 25℃ 1 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE= 0V TJ = 25℃ 200 nA VGE(th) Gate-Emitter Threshold Voltage IC = 1 mA, VCE = VGE 5.2 6.5 V VCE(sat) Collector-Emitter Saturation Voltage IC=25A ,VGE = 15V TJ = 25℃ 1.90 2.10 V TJ = 125℃ 2.20 V Cies Input Capacitance VCE = 25V, VGE = 0V , f ＝1MHz 1.5 nF Coes Output Capacitance 0.13 nF

td(on) Turn-on Delay Time VCC = 600V, IC = 15A, RG =68Ω, VGE =± 15V , Inductive Load, TJ = 25℃ 105 ns tr Rise Time 50 ns td(off) Turn-off Delay Time 260 ns tf Fall Time 240 ns Eon Turn-on Switching Loss 1.67 mJ Eoff Turn-off Switching Loss 0.62 mJ Ets Total Switching Loss 2.29 mJ td(on) Turn-on Delay Time VCC = 600V, IC = 15A, RG = 68Ω, VGE =± 15V, Inductive Load, TJ= 125℃ 90 ns tr Rise Time 50 ns td(off) Turn-off Delay Time 275 ns tf Fall Time 360 ns Eon Turn-on Switching Loss 2.08 mJ Eoff Turn-off Switching Loss 1.13 mJ Ets Total Switching Loss 3.21 mJ Qg Total Gate Charge VCE = 600V, IC = 15A, VGE = -15V ~ +15V 145 nC RBSOA Reverse Bias Safe Operating Area IC = 30A ,VCC = 960V, Vp =1200V, Rg = 4.7Ω, VGE=+15V to 0V, TJ =125°C Trapezoid SCSOA Short Circuit Safe Operating Area VCC = 600V, VGE = 15V, TJ = 125℃ 10 μs Diode-Brake-chopper Absolute Maximum Ratings (TC = 25℃ unless otherwise specified) Symbol Description Value Units VRRM Repetitive Peak Reverse Voltage 1200 V IF DC Forward Current 15 A IFRM Repetitive Peak Forward Current 30 A Characteristic Values Symbol Description Test conditions Min. Typ. Max. Units VFM Forward Voltage IF＝15A TJ = 25℃ 1.9 V TJ = 125℃ 2.0 Irr Peak Reverse Recovery Current IF＝15A, di/dt =7050A/μs, Vrr = 600V, VGE = -15V TJ = 25℃ 15 A TJ = 125℃ 30 Qrr Reverse Recovery Charge TJ = 25℃ 1.02 µC TJ = 125℃ 2.17

Symbol Condition Typ. Max. Units R25 TC =25℃ 5 kΩ P25 TC =25℃ 50 mW Module Absolute Maximum Ratings Inverter& Brake& Rectifier TJ Maximum Junction Temperature 150 ℃ Inverter& Brake& Rectifier TJ op Operation Temperature -40 +150 ℃ Tstg Storage Temperature -40 +125 ℃ Viso Isolation Voltage (All Terminals Shorted) f = 50Hz, 1minute 2500 V Thermal characteristics Symbol Description Typ. Max. Units Inverter RθJC Junction-To-Case (IGBT Part, Per Leg) 0.56 ℃/W RθJC Junction-To-Case (Diode Part, Per Leg) 1.42 ℃/W Brake RθJC Junction-To-Case, IGBT 0.70 ℃/W RθJC Junction-To-Case, diode 1.42 ℃/W Rectifier RθJC Junction-To-Case, diode 0.90 ℃/W Module RθCS Case-To-Sink (Conductive Grease Applied) 0.10 ℃/W Mounting torque Mounting Screw:M5 3.0 5.0 N·m Weight Weight of Module 200 g Notes: (1) Repetitive Rating: Pulse width limited by max. Junction temperature

Fig.1 Typical Load Current vs. Frequency (Inverter) Fig.2 Typical Output Characteristics- Inverter Fig.3 Output Characteristics- Inverter 1 10 30 Duty Cycle:50% TJ =125℃ TC =80℃ Rg=20 ohm,VGE =15V Frequency(KHz) Load Current(A) VCE(V) IC(A) VGE =15V TJ =125℃ TJ =25℃ VCE(V) IC(A) TJ =125℃ VGE =17V VGE =15V VGE =13V VGE =11V VGE =9V

Fig.4 Forward Characteristics of FWD Inverter Fig.5 Reverse Bias Safe Operation Area (RBSOA) Fig.6 Typical Switching Loss vs. Collector Current Fig.7 Typical Switching Loss vs. Gate Resistance (Inverter) (Inverter) VF(V) IF(A) VGE =0V TJ =125℃ TJ =25℃ 0 200 400 600 800 1000 1200 IC(A) VCES(V) Module Chip 10 15 20 25 30 35 40 45 50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 E(mJ) IC(A) VCC =600V,VGE =+/-15V, Rg =20 ohm,TJ =125℃ Eoff Eon Erec 10 15 20 25 30 35 40 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 E(mJ) Rg() VCC =600V,VGE =+/-15V, IC =25A,TJ =125℃ Eoff Eon Erec

Fig.8 Typical Saturation Voltage Characteristics Fig.9 Forward Characteristics of Diode (Brake-Chopper- IGBT) (Brake-Chopper- FWD) Fig.10 Forward Characteristics of Rectifier Diode Fig.11 NTC Temperature characteristics Fig.12 Transient thermal impedance Fig.13 Transient thermal impedance (IGBT- Inverter) (Diode- Inverter) VCE(V) IC(A) VGE =15V TJ =125℃ TJ =25℃ VF(V) IF(A) VGE =0V TJ =125℃ TJ =25℃ VF(V) IF(A) TJ =25℃ TJ =125℃ 10 20 30 40 50 60 70 80 90 100 110 120 2000 4000 6000 8000 10000 R() TC(℃) Rtyp 0.001 0.01 0.1 1 2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ZthJC(K/W) T(s) ZthJC:IGBT 0.001 0.01 0.1 1 3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ZthJC(K/W) T(s) ZthJC:Diode

Internal Circuit Diagram: Package Outline (Unit: mm):