BSS84KR HMSEMI | Alldatasheet
Document overview
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Technical content
FEATURES
z Low On-Resistance 。 z Low Gate Threshold Voltage. z Low Input Capacitance. z Fast Switching Speed. z Available in Lead Free Version.
APPLICATIONS
z P-channel enhancement mode effect transistor. SOT-323
ORDERING INFORMATION
T y p e N o . M a r k i n g P a c k a g e C o d e %66.5 K 8 4 S O T - 3 2 3 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source voltage -50 V VDGR Drain-Gate voltage -50 V VGSS Gate -Source voltage continuous ±20 V ID Drain current (Note1) continuous -130 mA PD Power Dissipation (Note1) 200 mW RθJA Thermal resistance,Junction-to-Ambient 625 ℃/W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on GALAXY Inc. suggested pad layoutdocument AP02001. Pb Lead-free P-Channel Enhancement Mode Field Effect Transistor %66.5
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V (BR)DSS VGS=0V,ID=-250μA -50 -75 - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-1mA -0.8 -1.6 -2.0 Gate-body Leakage Forward R e v e r s e IGSS VDS=0V, VGS=20V VDS=0V, VGS=-20V 100 -100 nA Zero Gate Voltage Drain Current I DSS VDS=-50V, VGS=0V, TJ = 25℃ - - -15 μA VDS=-50V, VGS=0V, TJ = 125℃ -60 VDS=-25V, VGS=0V, TJ = 25℃ - - -100 Forward transconductance g FS VDS=-25V,ID=100mA 50 - - mS Static drain-Source on-resistance R DS(ON) VGS=-5.0V,ID=100mA - 6 10 Ω Input capacitance CISS VDS=-25V,VGS=0V,f=1.0MHz - - 45 pF Output capacitance COSS - - 25 Reverse transfer capacitance C RSS - - 12 Turn-On Delay Time tD(ON) VDD = -30V, ID= -0.27A, VGS= -10V,RGEN= 50Ω - 10 - ns Turn-Off Delay Time tD(OFF) - 18 - ns P-Channel Enhancement Mode Field Effect Transistor %66.5
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified P-Channel Enhancement Mode Field Effect Transistor %66.5
Plastic surface mounted package SOT-323 SOLDERING FOOTPRINT Unit : mm
PACKAGE INFORMATION
A 2.00 2.20 B 1.15 1.35 C 0.95 Typical D 0.30 Typical E 0.25 0.40 G 1.2 1.4 H 0.02 0.10 J 0.10 Typical K 2.20 2.40 All Dimensions in mm Device Package Shipping %66.5 SOT-323 3000/Tape&Reel 1.90 0.650.65 0.90 0.70 A B K D E J H G C P-Channel Enhancement Mode Field Effect Transistor %66.5