BSS8402DW HMSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW
FEATURES
z Low On-Resistance . z Low Gate Threshold Voltage. z Low Input Capacitance. z Fast Switching Speed. z Low Input/Output Leakage. z C o m p l e m e n t a r y P a i r . SOT-363
ORDERING INFORMATION
Type No. Marking Package Code BSS8402DW KNP SOT-363 MAXIMUM RATING – Total Device @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units PD Power Dissipation 200 mW RθJA Thermal resistance,Junction-to-Ambient 625 ℃/W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ Maximum Ratings N-CHANNEL –Q1, 2N7002 Section @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source voltage 60 V VDGR Drain-Gate voltage(RGS≤1.0MΩ) 60 V VGSS Gate -Source voltage continuous P u l s e d ±20 ±40 V ID Drain current continuous continuous@100 ℃ P u l s e d 115 800 mA Pb Lead-free
Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW Maximum Ratings N-CHANNEL –Q2, BSS84 Section @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source voltage -50 V VDGR Drain-Gate voltage(RGS≤1.0MΩ) -50 V VGSS Gate -Source voltage continuous ±20 V ID Drain current continuous -130 mA ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Q1,2N7002 Section Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V (BR)DSS VGS=0V,ID=10μA 60 70 - Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1 - 2.5 V Gate-body Leakage Forward R e v e r s e IGSS VDS=0V, VGS=20V VDS=0V, VGS=-20V 100 -100 nA VDS=60V, VGS=0V - - 1 Zero Gate Voltage Drain Current I DSS VDS=60V,VGS=0V,Tj=125℃ - - 500 μA On-state Drain Current ID(On) VGS=10V, VDS=7.5V 0.5 1.0 - A Drain-Source on-voltage V DS(ON) VGS=10V,ID=500mA VGS=5V,ID=50mA 0.6 0.09 3.75 1.5 V Forward transconductance g FS VDS=10V,ID=200mA 80 - - mS Static drain-Source on-resistance R DS(ON) VGS=5.0V,ID=50mA VGS=10V,ID=500mA, Tj=125℃ 3.2 4.4 7.5 13.5 Ω Input capacitance CISS - 22 50 Output capacitance COSS - 11 25 Reverse transfer capacitance C RSS VDS=25V,VGS=0V,f=1.0MHz - 2 5 pF Turn-On Delay Time tD(ON) - 7 20 ns Turn-Off Delay Time tD(OFF) VDD = 30V, ID= 0.2A, RL = 150Ω, VGS= 10V, RGEN= 25Ω - 11 20 ns
Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Q2,BSS84 Section Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V (BR)DSS VGS=0V,ID=-250μA -50 - - Gate Threshold Voltage VGS(th) VDS=VGS, ID=-1mA -0.8 - -2 V Gate-body Leakage Forward R e v e r s e IGSS VDS=0V, VGS=20V VDS=0V, VGS=-20V 100 -100 nA VDS=-50V, VGS=0V,Tj=25℃ - - -15 VDS=-50V, VGS=0V,Tj=125℃ - - -60 Zero Gate Voltage Drain Current I DSS VDS=-25V,VGS=0V,Tj=25℃ - - -100 nA Forward transconductance g FS VDS=-25V,ID=-0.1A 0.05 - - S Static drain-Source on-resistance R DS(ON) VGS=-5V,ID=-0.1A - - 10 Ω On-state drain current ID(ON) VGS=10V,VDS=7.5V 0.5 1.0 - A Input capacitance CISS - - 45 Output capacitance COSS - - 25 Reverse transfer capacitance C RSS VDS=-25V,VGS=0V,f=1.0MHz - - 12 pF Turn-On Delay Time tD(ON) - 10 - ns Turn-Off Delay Time tD(OFF) VDD =-30V, ID=-0.27A, VGS=-10V,RGEN= 50Ω - 18 - ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW
Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW
Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW PACKAGE OUTLINE Plastic surface mounted package SOT-363 SOLDERING FOOTPRINT Unit : mm
PACKAGE INFORMATION
A 2.00 2.20 B 1.15 1.35 C 0.95 Typical D 0.25 Typical E 0.25 0.40 G 0.60 0.70 H 0.02 0.10 J 0.10 Typical K 2.2 2.4 All Dimensions in mm Device Package Shipping BSS8402DW SOT-363 3000/Tape&Reel 0.50 0.40 1.90 0.650.65 A B C D E G K J H