BSS138 HMSEMI | Alldatasheet
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A,Dec,2010 SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET FEATURE Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Low Input / Output Leakage Maximum ratings (T a=25℃ unless otherwise noted) Parameter Symbol Value Unit V e g a t l o V e c r u o S - n i a r D DS 50 Continuous Gate-Source Voltage V GSS ±12 V I t n e r r u C n i a r D s u o u n i t n o CD A 2 2 . 0 Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient RθJA 357 ℃/W T e r u t a r e p m e T g n i t a r e p O j 0 5 1 T e r u t a r e p m e T e g a r o t S stg -55 ~+150 SOT-23 1. GATE 2. SOURCE 3. DRAIN
A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA 50 V VDS =0V, VGS =±12V ±1 µA VDS =0V, VGS =±10V ±0.5 µA Gate-body leakage IGSS VDS =0V, VGS =±5V ±0.05 µA Zero gate voltage drain current IDSS V DS =50V, VGS =0V 0.1 µA On characteristics Gate-threshold voltage VGS(th) V DS =VGS, ID =0.25mA 0.60 1.20 V VGS =1.8V, ID =0.05A 2.50 VGS =2.5V, ID =0.05A 2.0 Static drain-source on-resistance R DS(on) VGS =5V, ID =0.05A 1.6 Ω Forward transconductance gFS VDS =10V, ID =0.2A 0.20 S Dynamic characteristics* Input capacitance Ciss 58 Output capacitance Coss 9.75 Reverse transfer capacitance Crss VDS =25V,VGS =0V, f=1MHz 5.2 pF Gate resistance RG V DS =5V,VGS =10mV, f=1MHz 281 Ω Switching characteristics* Turn-on delay time td(on) 5 Rise time tr 5 Turn-off delay time td(off) 60 Fall time tf VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω ns Drain-source body diode characteristics Body diode forward voltage* V SD I S=0.115A, VGS = 0V 1.2 V * These parameters have no way to verify.