K903-MR VBSEMI | Alldatasheet

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Technical content

FEATURES

  • Dynamic dV/dt R ating
  • Repetitive Avalanche Rated
  • Isolated Central Mounting Hole
  • F a s t S w i t c h i n g
  • Ease of Paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 Ω, IAS = 7.8 A (see fig. 12). c. I SD ≤ 7.8 A, dI/dt ≤ 140 A/μs, VDD ≤ 600 V, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 850 RDS(on) (Ω)V GS = 10 V 2. Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuratio n Single Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, u nless otherwise noted) PARAMETER SYMBOL LI MIT UNIT Drain-Source Voltage VDS 850 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID ATC = 100 °C 3.9 Pulsed Drain Curr enta IDM 24 Linear Derating Factor 1.5 W/°C Single Puls e Avalanche Energyb EAS 770 mJ Repetitive Aval anche Currenta IAR 7.8 A Repetitive A valanche Energya EAR 19 mJ Maximum Power Dissipa tion TC = 25 °C PD 45 W Peak Dio de Recovery dV/dtc dV/dt 5.0 V/ns Operating Junction and S torage Temperature Range TJ, Tstg - 55 to + 150 °C S oldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

  • Pb contai ning terminations are not RoHS compliant, exemptions may apply S N-Channel MOSFET G D G D S TO-220 FULLPAK Top View Power MOSFET 5.5 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw K903-MR A ll data sheet.com

a. Repetitive rating; pulse widt h limited by maximum junction tempe rature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. THERMAL RESISTA NCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -4 0 °C/WCase-t o-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0 .65 SPECIFICATIONS (TJ = 25 °C, u nless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown V oltage VDS VGS = 0 V, ID = 250 μA 850 VDS Temperature Co efficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA -0 . 9 8- V/° C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Sou rce Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 850 V, VGS = 0 V - - μA VDS = 680 V, VGS = 0 V, TJ = 125 °C - - Drain-S ource On-State Resistance RDS(on) VGS = 10 V ID = 3.7 Ab Ω Forward Tr ansconductance gfs VDS = 100 V, ID = 3.7 Ab - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - - pFOutput Capacitance Coss - - Revers e Transfer Capacitance Crss - - Total Gate Charge Qg VGS = 10 V ID = 3.8 A, VDS = 400 V, see fig. 6 and 13b - - 28 nC Gate-Source Charge Qgs -- 5 Gate-Drain Charge Qgd - - 12 Turn-On Delay T ime td(on) VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD= 52 Ω see fig. 10b - - ns Rise Time tr - - Turn-Off Del ay Time td(off) - - Fall Tim e tf - - Internal Drain I nductance LD Between lead 6 mm (0.25") from package and center of die contact -5 . 0- nH Internal Source Inductance L S -1 3- Drain-Source B ody Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integr al reverse p - n junction diode -- 5 . 0 A Pulsed Diode Forward Currenta ISM -- 2 1 Body D iode Voltage VSD TJ = 25 °C, IS = 3.8 A, VGS = 0 Vb -- 1 . 8 V Bod y Diode Reverse Recovery Time trr TJ = 25 °C, IF = 3.8 A, dI/dt = 100 A/μsb - ns Body Diode Reverse Recovery Charge Q rr - μ C Forward Tu rn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G 2.40 816 4.5 320 3.3 - - V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw K903-MR A ll data sheet.com

Fig. 1 - Typ ical Output Characteristics, TC = 25 °C Fig. 2 - Ty pical Output Characteristics, TC = 150 °C Fig. 3 - Typi cal Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 91114_01 Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 25 °C 4.5 V VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) 100 101 101 100 10-1 10-2 10-2 10-1 102 101 100 10-1 100 101 VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 150 °C 91114_02 4.5 V 10-2 10-2 10-1 102 20 µs Pulse Width VDS = 100 V 101 100 10-1 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 5678 9 1 04 25 °C 150 °C 91114_03 ID = 4 A VGS = 10 V3.0 0.0 0.5 1.0 1.5 2.0 2.5 TJ, Junction Temperature (°C) RDS(on), Drain-to-Source On Resistance (Normalized) 91114_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 3.5 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw K903-MR A ll data sheet.com

Fig. 5 - Typica l Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 2400 2000 1600 1200 400 800 100 101 Capacitance (pF) VDS, Drain-to-Source Voltage (V) Ciss Crss Coss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 91114_05 QG, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 0 8 40322416 VDS = 180 V VDS = 240 V For test circuit see figure 13 VDS = 300 V 91114_06 ID = 3.2 A 101 100 VSD, Source-to-Drain Voltage (V) ISD, Reverse Drain Current (A) 25 °C 150 °C VGS = 0 V 91114_07 10 µs 100 µs 1 ms 10 ms Operation in this area limited by RDS(on) VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) TC = 25 °C TJ = 150 °C Single Pulse10-2 103 0.1 0.1 25 102 25 103 25 104 91114_08 102 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw K903-MR A ll data sheet.com

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig . 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case ID, Drain Current (A) TC, Case Temperature (°C) 0.0 3.0 4.0 5.0 6.0 7.0 25 1501251007550 91114_09 1.0 2.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS Rg D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.1 10-2 10-5 10-4 10-3 10-2 0.1 1 10 PDM t1, Rectangular Pulse Duration (s) Thermal Response (ZthJC) Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0 − 0.5 0.2 0.1 0.05 0.02 0.01 91114_11 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw K903-MR A ll data sheet.com

Fig. 12a - Unclamp ed Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit RG IAS 0.01 Ωtp D.U.T L VDS - VDD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw K903-MR A ll data sheet.com

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw K903-MR A ll data sheet.com

TO-220 FULLPAK (HIGH VOLTAGE) Notes 1. To be used only for process drawing. 2. These di mensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet C pk > 1.33. 4. All dimensions include bur rs and plating thickness. No chipping or package damage. E b n L e Ø P D c u V A MILLIMETERS INCHES DIM. MIN. MAX . MIN. MAX. A 4.570 4.830 0.180 0.190 A1 2.570 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 0.419 e 2.54 BSC 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 Ø P 3.050 3.450 0.120 0.136 u 2.400 2.500 0.094 0.098 v 0.400 0.500 0.016 0.020 ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw K903-MR A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw K903-MR A ll data sheet.com