K2415-Z

K2415-Z VBSEMI | Alldatasheet

Document overview

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Technical content

N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET ® Power MOSFET 1 0 0 % Rg and UIS Tested  Material categorization: For definitions of compliance please see

APPLICATIONS

 DC/DC Converters  DC/AC Inverters  Motor Drives Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Base on TC = 25 °C. PRODUCT SUMMARY VDS (V) R DS(on) () Max. I D (A) Q g (Typ.) 0.073 at VGS = 10 V 18 19.8 10.085 at VGS= 4.5 V 5 TO-252 SG D Drain Connected to Tab N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 TC = 25 Continuous Drain Current °C 1 ID 1TC = 70 A °C 4 Pulsed Drain Current (t = 300 µs) IDM 25 Avalanche Current IAS 15 Single Avalanche Energya L = 0.1 mH EAS 11.25 mJ TC = 25 Maximum Power Dissipationa °C 41.7 PD b W TA = 25 °Cc 2.1 TJ, TOperating Junction and Storage Temperature Range stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c RthJA 60 °C/W Junction-to-Case (Drain) RthJC 3 www.VBsemi.com K2415-Z-VB g

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Un it Static VGS = 0 V, IDDrain-Source Breakdown Voltage V DS = 250 µA 60 V Gate Threshold Voltage VDS = VGS, IDVGS(th) = 250 µA 1.0 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA Zero Gate Voltage Drain Current VDS = 60 V, V GS IDSS = 0 V 1 VDS = 60 V, V GS = 0 V, TJ µA= 125 °C 50 VDS = 60 V, V GS = 0 V, TJ = 150 °C 250 On-State Drain Currenta VDS 10 V, VGS ID(on) = 10 V 20 A Drain-Source On-State Resistancea VGS = 10 V, ID RDS(on) = 6.6 A 0.073 0.08VGS = 4.5 V, ID = 6 A 5 Forward Transconductancea gfs VDS = 15 V, ID = 6.6 A 25 S Dynamicb Input Capacitance Ciss 6 VDS = 30 V, VGS = 0 V, f = 1 MHz pFOutput Capacitance Coss 85 Reverse Transfer Capacitance Crss 40 Total Gate Chargec Qg VDS = 30 V, VGS = 10 V, ID = 6.6 A 19.8 30 Gate-Source Charge nCc Qgs 3.6 Gate-Drain Chargec Qgd 4.1 Gate Resistance Rg f = 1 MHz 0.4 2 4  Tur n-On Delay Timec td(on) VDD = 30 V, RL = 9.6  ID  5.2 A, VGEN = 10 V, Rg = 1  81 6 Rise Time ns c tr 11 20 Turn-Off Delay Timec td(off) 18 27 Fall Timec tf 51 0 Tur n-On Delay Timec td(on) VDD = 30 V, RL = 9.6  ID  5.2 A, VGEN = 4.5 V, Rg = 1  38 57 Rise Timec tr 58 87 Turn-Off Delay Timec td(off) 18 27 Fall Timec tf 81 6 Drain-Source Body Diode Ratings and Characteristicsb TC = 25 °C Continuous Current 1IS 8 A Pulsed Current ISM 25 Forward Voltagea VSD IF = 5.2 A, VGS = 0 V 0.8 1.5 V Reverse Recovery Time trr IF = 5.2 A, dI/dt = 100 A/µs 34 51 ns Peak Reverse Recovery Current I RM(REC) 35A Reverse Recovery Charge Qrr 50 75 nC www.VBsemi.com K2415-Z-VB g

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transfer Characteristics Transconductance ID - Drain Current (A) VGS = 0.5 1 1.5 VDS - Drain-to-Source Voltage (V)

10 V thru 7 V

VGS = 3 V = 4 V ID - Drain Current (A) 1 2 3 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 3 9 gfs - Transconduct ance (S) TC = 25 ° ID - Drain Current (A) C On-Res TC = - 55 ° TC = 125 °C C istance vs. Drain Current On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.04 0.06 0.07 0.08 0.09 0.10 0 5 10 15 20 25 ID - Dr RDS(on) - On-Resistance (Ω) ain Current (A) VGS =4.5V VGS = 10 V 0.03 0.06 0.09 0.12 0.15 RDS(on) - On-Re sistance (Ω) 4 6 8 VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 6.6 A 0 6 12 18 VGS - Gate- to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 40 V VDS = 15 V VDS = 30 V ID = 6.6 A www.VBsemi.com K2415-Z-VB g

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 1250 1000 750 500 250 0 20 40 60 80 C - 100 Capacitance (pF) C VDS - Drain-to-Source Voltage (V) iss Coss rssC 0.45 0.9 1.35 1.8 2.25 RDS(on) - On - 50 - 25 0 25 50 75 100 125 150 -Resistance (Normalized) TJ - Junction Temperature (°C) VGS = 4.5 V, ID = 6 A VGS = 10 V, ID = 6.6 A Threshold Voltage Current Derating 2.7 2.4 2.1 1.8 1.5 1.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 TJ - Temperature (° VGS(th) (V) μA 127 122 117 112 107 102 VDS (V) Drain-to-Source Voltage ID = 250 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Drain Source Breakdown vs. Junction Temperature μA ID - Dr ain Current (A) 50 75 100 125 150 TC - Case Temperature (°C) www.VBsemi.com K2415-Z-VB g

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Single Pulse Avalanche Current Capability vs. Time IDAV (A 0.000010.000001 0.001 0.01 0.0001 Time (s) TJ = 25 °C TJ = 150 °C Safe Operating Area 0.01 0.1 100 0.1 1 10 100 DC, VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is sp ID - Drain Current (A) ecified 10 s 1 s, 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.01 10-4 10-3 10-2 Normaliz 10-1 Square Wa 11 0 ve Pulse Duration (s) ed Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 0.02 0.05 Single Pulse www.VBsemi.com K2415-Z-VB g

• Dimension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 www.VBsemi.com K2415-Z-VB g

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) 0.224 Recommended Minimum Pads Dimensions in Inches/(mm) (5.690) 0.180 (4.572) 0.055 0.090 0.087 0.243 (1.397) Return to Index www.VBsemi.com K2415-Z-VB g

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