J310

J310 SYC | Alldatasheet

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MOSFET N 25V 0.06MA RF AMPLIF TRANSISTORES DE EFECTO DE CAMPO J310

G D S J309 J310 N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted MMBFJ309 MMBFJ310 Symbol Parameter Value Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C SOT-23 Mark: 6U / 6T G S D TO-92 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." NOTE: Source & Drain are interchangeable J309 / J310 / MMBFJ309 / MMBFJ310 Symbol Characteristic Max Units J309-J310 *MMBFJ309-310 PD Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 mW mW/ °C R θJC Thermal Resistance, Junction to Case 125 °C/W R θJA Thermal Resistance, Junction to Ambient 357 556 °C/W

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Units V(BR)GSS Gate-Source Breakdown VoltageIG = - 1.0 µA, VDS = 0 - 25 V IGSS Gate Reverse Current V GS = - 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 125°C - 1.0 - 1.0 nA µA VGS(off) Gate-Source Cutoff Voltage VDS = 10 V, ID = 1.0 nA 309 310 - 1.0 - 2.0 - 4.0 - 6.5 V V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 10 V, VGS = 0 309 310 mA mA VGS(f) Gate-Source Forward Voltage V DS = 0, IG = 1.0 mA 1.0 V SMALL SIGNAL CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Re (yis) Common-Source Input Conductance VDS = 10, ID = 10 mA, f = 100 MHz 309 310 0.7 0.5 mmhos mmhos Re (yos) Common-Source Output Conductance V DS = 10, ID = 10 mA, f = 100 MHz 0.25 mmhos G pg Common-Gate Power Gain V DS = 10, ID = 10 mA, f = 100 MHz 16 dB Re (yfs) Common-Source Forward Transconductance VDS = 10, ID = 10 mA, f = 100 MHz 12 mmhos Re (yig) Common-Gate Input Conductance VDS = 10, ID = 10 mA, f = 100 MHz 12 mmhos gfs Common-Source Forward Transconductance VDS = 10, ID = 10 mA, f = 1.0 kHz 309 310 10,000 8000 20,000 18,000 µmhos µmhos goss Common-Source Output Conductance V DS = 10, ID = 10 mA, f = 1.0 kHz 150 µmhos gfg Common-Gate Forward Conductance VDS = 10, ID = 10 mA, f = 1.0 kHz 309 310 13,000 12,000 µmhos µmhos gog Common-Gate Output Conductance V DS = 10, ID = 10 mA, f = 1.0 kHz 309 310 100 150 µmhos µmhos C dg Drain-Gate Capacitance V DS = 0, VGS = - 10 V, f = 1.0 MHz 2.0 2.5 pF C sg Source-Gate Capacitance V DS = 0, VGS = - 10 V, f = 1.0 MHz 4.1 5.0 pF NF Noise Figure V DS = 10 V, ID = 10 mA, f = 450 MHz 3.0 dB en Equivalent Short-Circuit Input Noise Voltage VDS = 10 V, ID = 10 mA, f = 100 Hz 6.0 N-Channel RF Amplifier (continued) nV/√Hz J309 / J310 / MMBFJ309 / MMBFJ310

Transfer Characteristics Transfer Characteristics Transfer Characteristics Forward Transadmittance Transfer Characteristics Input Admittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued)

J309 / J310 / MMBFJ309 / MMBFJ310 Typical Characteristics (continued) Capacitance vs. VoltageOutput Admittance Output Conductance vs. Drain CurrentCommon Drain-Source Noise Voltage vs. Frequency Reverse Transadmittance N-Channel RF Amplifier (continued)

Typical Characteristics (continued) Transconductance vs. Drain CurrentParameter Interactions Leakage Current vs. Voltage Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 100 200 300 400 500 600 700 TEMPERATURE ( C) P - POWER DISSIPATION (mW) D o TO-92 SOT-23 J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued)