IMP522

IMP522 IMP | Alldatasheet

Document overview

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Technical content

© 2001 IMP , Inc. 408-432-9100/www.impweb.com 1 IMP522IMP522 POWER MANAGEMENT ADVANCE PRODUCT INFORMATION Dual EL LamDual EL Lamp Drp Driviverer N Cellular phones N PDAs/Handheld computers N Toys/Consumer electronics N Safety Illumination N LCD modules N Remote controls N Drive two EL lamps independently N Digital LMPSEL pin — Activate either or both EL output drivers N 220VP-P typical AC output voltage drives 30nF EL lamps N Wide operating voltage range: 2V to 6.5V N Low current consumption: 2mA maximum N Disable mode extends battery life — Disable current 2µA maximum N Compact 10-pin MicroSO package N High-voltage, low-cost CMOS process Key Features

Applications

522_01.eps Lamp Drive Oscillator Three-Level Detector Select A Lamp Select B Lamp Switch Oscillator VREF (2) RSW-OSC LX (4) CS (3) VA (8) VAB (7) VB (5) Dual Bridge DriverVDD Regulation Control (1) VDD (9) LMPSEL (10) REL-OSC (6) GND The IMP522 is a dual-output, high-voltage electroluminescent (EL) lamp driver. Either or both EL lamp driver outputs can be turned ON with the LMPSEL select pin. One EL lamp is connected between V A and VAB and the other is connected between VB and VAB. VAB is a common pin for both lamps. With an input supply voltage between 2.0V and 6.5V , the typical regulated lamp drive voltage is 220V peak-to-peak. The device uses a single inductor and a minimum number of passive components: a storage capacitor, a fast recovery diode and two resistors to set the PWM and EL drive frequencies. These can be independently set to optimize brightness and minimize power consumption. R SW is connected between the R SW-OSC pin and the supply pin V DD to set the frequency for the internal 4.0Ω switching MOSFET. The switch duty cycle is 88%. The EL lamp driver frequency is set by REL connected between the REL-OSC pin and the VDD pin. Designed to minimize battery current drain, the IMP522 draws 2mA maxi- mum. A power-saving shutdown mode reduces current to 2µA maximum. The IMP522 is available in a compact 10-pin MicroSO package and in die form. Block Diagram

2 408-432-9100/www.impweb.com © 2001 IMP , Inc. Parameter Symbol Conditions Min Typ Max Units ON-resistance of MOS Switch R DS(ON) I = 100mA 4.0 8.0 Ω Output Voltage Regulation V CS VDD = 2.0 to 6.5V, 110 120 V T = –40°C to 85°C Output Voltage Peak-to-Peak (in regulation) V A-VAB, VB-VAB In Regulation 220 V Input Current at VDD Pin I DD LMPSEL = GND 650 µA Powerdown Input Current I DDQ VRSW–OSC < 100mA 2 µA VDD = 2.0 to 6.5 T = –40°C to 85°C Input Crrent Plus Inductor Current I IN See Figure 1 30 mA LMPSEL = GND or VDD LMPSEL = floating 43 mA Output Drive Frequency f EL See Figure 1 250 Hz Switching Frequency f SW See Figure 1 61 kHz Switching Duty Cycle D SW See Figure 1 88 % LMPSEL Low-Level Threshold V IL 0.3 VDD V LMPSEL High-Level Threshold V IH 0.7 VDD V LMPSEL Input Resistance R LMPSEL 50 k Ω LMPSEL Sink/Source Resistance I LMPSEL Floating/Hign Impedance State ± 5µ A LMPSEL Hysteresis V hys 50 mV 4LX 3CS 2RSW-OSC 1VDD LMPSEL 5VB 6 GND VAB VA

10 R EL-OSC

522_02.eps IMP522 MicroSO Part Number Input Voltage Temperature Range Pins-Package IMP522EMB 2.0V to 6.5V – 40°C to +85°C 10-MicroSO V Unless otherwise noted, VDD = 3.0V , RSW = 910kΩ, REL = 2.7MΩ, L = 220µH and TA = 25°C. Note: All voltages are referenced to GND. These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. Add /T to ordering part number for Tape and Reel.

Ordering Information

Electrical Characteristics

© 2001 IMP , Inc. Electroluminescent Lamp Drivers 3 Pin Descriptions rebmuNniPe maNn oitcnuF 1V DD detalugernuetarapesaotroerehdetcennocebyamLrotcudnI.ylppusegatlovevitisoP .ylppus 2R CSO-WS RrotsiserlanretxeehT.niprotsiseredom-hctiwS WS .ycneuqerfgnihctiwssenimreted 3C S lauqeyletamixorppasipmalLEehtssorcaegatlovehT.roticapacegarotsretrevnoctsooB Ctaegatlovehteciwtot S. 4L X .LrotcudnikcabylfotnoitcennoC 5V B .BpmaLLEroftuptuO 6D NG. dnuorG 7V BA .spmalLEhtobroflanimretnommoC 8V A .ApmaLLEroftuptuO 9L ESPML .spmalhtobroBpmalroApmalrehtietceleS.niptupnietats-eerhtlatigiD 01R CSO-LE RrotsiserlanretxE.nipgnittesycneuqerfrotallicsopmalLEehT LE Votdetcennoc DD stes .spmalhtobrofycneuqerfevirdpmaLLEeht spe.10t_225 Figure 1. Test Circuit

Application Information

L 522_04.eps ON = VDD OFF = 0V RSW CS0.1µF10µF L = 220µH REL = 2.7MΩ RSW = 910kΩ

4 408-432-9100/www.impweb.com © 2001 IMP , Inc. The outputs VA – VAB and VB – VAB are configured as H-bridges, driven by the EL oscillator. Each output is switched between C S and ground on alternate phases, creating peak-to-peak signals across the EL lamps of twice the regulated voltage. EL Lamp Selection: LMPSEL The digital input pin LMPSEL allows either or both EL lamps to be active. Lamp A is active when LMPSEL is LOW and lamp B is active when LMPSEL is HIGH. When LMPSEL is left floating or driven by a three-state driver in the high impedance state, both lamp driver outputs are active. The logic HIGH signal level is defined as greater than 0.7V DD and logic LOW is defined as less than 0.3V DD. A floating level is rec- ognized with the signal level between 0.3V DD and 0.7V DD, or when the output impedance of the driving voltage signal source is infinite (driver in OFF state). Both drivers are OFF if the IMP522 is disabled. LESPML langiS evirDApmaL VA dnaV BA evirDBpmaL VB dnaV BA HGIHF FON O WOLN OF FO /gnitaolF ecnadepmIhgiH NON O spe.20t_225 EL Driver Output Overvoltage Regulator The IMP522 maximum V CS output voltage is between 110V and 120V . The internal overvoltage regulator skips the inductor switching whenever the voltage on the C S pin exceeds the regula- tion threshold. The internal overvoltage detection trip point has a hysterisis of 1V and a range of 110V to 120V at room temperature. PWM Circuit Switching The switching MOSFET is driven by the PWM signal (nominally 61kHz). During the first 88% of the period, the switch is ON, providing a low impedance path (<8 Ω) from L X to ground. This causes the external inductor to charge. In the last 12% of the period, the MOSFET is turned OFF. This causes the voltage on the output of L X to rise up to a high value. At some point, this will forward-bias the external diode, thus pumping charge into the storage capacitor C S. The voltage on C S increases each cycle to between 110V and 120V . When the internal regulation trip-point is reached, the overvoltage regulator turns the MOSFET switch OFF to conserve power.

© 2001 IMP , Inc. Electroluminescent Lamp Drivers 5 Power Sequencing To power up the chip, the RSW-OSC pin is connected to VDD through the external RSW resistor. The voltage on the pin will charge up to VDD/2. An internal threshold detector circuit monitors the pin voltage and when it exceeds the threshold range (0.2V to 0.9V) it powers up the oscillator and internal bias modules. This starts a delay counter which is one half of the EL oscillator period, after which power to the high voltage internal modules is applied. The IMP522 is then operating fully. To power down the chip, R SW is driven to ground via a switch or logic gate. When the voltage on the driver side of the resistor falls below V DD/2, there will be no input bias current into the R SW-OSC pin. This immediately powers down the internal high-voltage circuits, which effectively shuts the lamp off. At this point the oscillator and bias modules still draw quiescent current, but oscil- lations have ceased. As the R SW-OSC pin voltage falls below 0.1, the oscillator and bias modules are also fully powered down. Figure 1. Driver Waveforms IMP522, RSW is connected to ground. When disabled, the IMP522 quiescent current drops to typically 20nA. In die form, an extra pin ENABLE is available (contact factory). can be driven by a microcontroller. cies can be programmed independently.

IMP , Inc. Corporate Headquarters 2830 N. First Street San Jose, CA 95134-2071 Tel: 408-432-9100 Fax: 408-434-0335 e-mail: info@impinc.com http://www.impweb.com The IMP logo is a registered trademark of IMP , Inc. All other company and product names are trademarks of their respective owners. © 2001 IMP, Inc. Printed in USA Publication #: 2007 Revision: E Issue Date: 03/16/01 Type: Advance Info IMP522IMP522 Package Dimensions e b D E1 E a L C D 0.10mm 0.004in A MicroSO (10-Pin).eps MicroSO (10-Pin) sehcnIs retemilliM niMx aMn iMx aM )niP-01(OSorciM 1A0 200.09 500.00 50.05 1.0 2A7 030.00 730.08 7.04 9.0 b9 500.08 900.05 1.05 2.0 C1 500.01 900.03 1.03 2.0 D2 411.00 221.00 9.20 1.3 eC SB7910.0C SB05.0 E0 991.01 781.05 0.55 0.5 1E2 411.00 221.00 9.20 1.3 L7 510.06 720.00 4.00 7.0 a °0 °6 °0 °6 3ta.40t_225 ecnatsiseRlamrehT θ CJ 14 ° W/C θ AJ 311 ° W/C 3ta.50t_225