C1226 IMP | Alldatasheet
Document overview
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Technical content
69© 2001 IMP , Inc. Process C1226 CMOS 1.2µm 100V CMOS, Double Metal - Double Poly
Electrical Characteristics
T = 25oC Unless otherwise noted ISO 9001 Registered Symbol Minimum Typical Maximum Unit Comments N-Channel High Voltage Transistor Threshold Voltage HVT N 0.70 0.90 1.10 V Punch Through Voltage HVBVDSSN 120 V ON Resistance HVPR 0N 550 700 850 Ω W/L = 147/5 Operating Voltage V GS = 5V VDS = 100V N-Channel Low Voltage Transistor Threshold Voltage VT N 0.30 0.45 0.65 V 100x1.5 µm Body Factor γN 0.475 V 1/2 100x1.5µm Conduction Factor βN 64 78 92 µA/V2 100x100µm Effective Channel Length Leff N 1.35 µm 100x1.5 µm Width Encroachment ∆WN 0.4 µm Per side Punch Through Voltage BVDSS N 51 2 V Poly Field Threshold Voltage VTFP N 81 5 V Symbol Minimum Typical Maximum Unit Comments P-Channel High Voltage Transistor Threshold Voltage HVT Punch Through Voltage HVBVDSSP –120 V ON Resistance HVPR 0N 2000 2500 3000 Ω W/L = 139/5 Operating Voltage V GS = 5V VDS = 100V V P-Channel Low Voltage Transistor Threshold Voltage VT P -0.65 –0.45 –0.30 V 100x1.5 µm Body Factor γ P 0.6 V 1/2 100x1.5µm Conduction Factor β P 20 25 30 µA/V2 100x100µm Effective Channel Length Leff P 1.5 µm 100x1.5 µm Width Encroachment ∆WP 0.4 µm Per side Punch Through Voltage BVDSSP –5 –12 V Poly Field Threshold Voltage VTF P(P) –8 –12 V
70 C1226-11-01
Min Channel Width 4.0 µm Diffusion Overlap of Contact 1.0 µm Min Spacing, Active Region, 5V 2.0 µm Poly Overlap of Contact 1.0 µm Poly1 Width/Space 1.5/2.0 µm Contact to Poly Space 1.5 µm Poly2 Width/Space 3.0/2.0 µm Metal-1 Overlap of Contact 1.0 µm Contact Width/Space 1.5/1.5 µm Minimum Pad Opening 65x65 µm Via Width/Space 1.5/1.5 µm Minimum Pad to Pad Spacing 5.0 µm Metal-1 Width/Space 2.5/1.5 µm Minimum Pad Pitch 80 µm Metal-2 Width/Space 2.5/1.5 µm Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments Starting Material p<100> Well (field) Sheet Resistance ρ N-well(f) 1.0 1.7 2.4 K Ω//box3n-well N+ Sheet Resistance ρN+ 20 35 50 Ω//box3 N+ Junction Depth x jN+ 0.3 µm P+ Sheet Resistance ρP+ 60 110 150 Ω//box3 P+ Junction Depth x jP+ 0.3 µm High-Voltage Gate Oxide Th HT GOX 24 nm Gate Oxide Thickness T GOX 24 nm Interpoly Oxide IP OX 33.6 42.0 50.4 nm Gate Poly Sheet Resistance ρPOL Y1 30.0 Ω//box3 Metal-1 Sheet Resistance ρM1 45 m Ω//box3 Metal-2 Sheet Resistance ρM2 29 m Ω//box3 Passivation Thickness T PASS 200+900 nm oxide+nit. High Voltage Section Rules Layout Rules Physical Characteristics Process C1226