C1227 IMP | Alldatasheet
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Technical content
71© IMP, Inc. Process C1227 HV BiCMOS 1.2µ m 30V Double Metal - Double Poly
Electrical Characteristics
T=25oC Unless otherwise noted ISO 9001 Registered Symbol Minimum Typical Maximum Unit Comments N-Channel High Voltage Transistor Threshold Voltage HVT N 0.7 0.9 1.1 V Punch Through Voltage HVBVDSS P 36 V ON Resistance HVPR 0N 1.4 m Ω -@ V GS = 5V cm 2 VDS = 0.1V Operating Voltage V GS = 5V V VDS = 30V N-Channel Low Voltage Transistor Threshold Voltage VT N 0.4 0.6 0.8 V 100x1.4 µm Body Factor γN 0.50 0.65 0.80 V 1/2 100x1.4µm Conduction Factor βN 64.0 75.0 86.0 µA/V2 100x100µm Effective Channel Length LeffN 1.20 1.35 1.50 µm 100x1.4 µm Width Encroachment ΔW N 0.45 µm Per side Punch Through Voltage BVDSS N 8V Poly Field Threshold Voltage VTFPN 10 18 V Vertical NPN Transistor Symbol Minimum Typical Maximum Unit Comments Beta h FE 50 140 240 4.5x4.5 µm Early Voltage V A 34 V Cut-Off Frequency f τ 1.89 GHz Capacitance Symbol Minimum Typical Maximum Unit Comments Gate Oxide C OX 1.338 1.439 1.569 fF/ µm 2 Metal-1 to Poly1 C M1P 0.040 0.046 0.052 fF/ µm 2 Metal-2 to Metal-1 C MM 0.043 0.050 0.057 fF/ µm 2 Symbol Minimum Typical Maximum Unit Comments P-Channel High Voltage Transistor Threshold Voltage HVT P –0.7 –0.9 –1.1 V Punch Through Voltage HVBVDSS P –36 V ON Resistance HVPR 0N 11.0 m Ω -@ V GS = –5V cm 2 @V DS = –0. 1V P-Channel Low Voltage Transistor Threshold Voltage VT P –0.8 –0.6 –0.4 V 100x1.4 µm Body Factor γ P 0.35 0.50 0.65 V 1/2 100x1.4µm Conduction Factor β P 20.0 25.0 30.0 µA/V2 100x100µm Effective Channel Length LeffP 1.35 1.50 1.65 µm 100x1.4 µm Width Encroachment ΔW P 0.40 µm Per side Punch Through Voltage BVDSS P –8 V Poly Field Threshold Voltage VTFP(P) –10 –18 V
72 C1227-4-98
Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments Starting Material p<100> Well(field)Sheet Resistanceρ N-well(f) 1.5 2.1 2.7 K Ω /o n-well N+ Sheet Resistance ρN+ 20.0 35.0 50.0 Ω /o N+ Junction Depth x jN+ 0.4 µm P+ Sheet Resistance ρP+ 50.0 75.0 100.0 Ω /o P+ Junction Depth x jP+ 0.4 µm Base Resistance RSHB_RB 1.33 1.66 2.00 K Ω /sq High-Voltage Gate Oxide HT GOX 22 nm Gate Oxide Thickness T GOX 22 nm Interpoly Oxide Thickness IPOX 33.6 42 50.4 nm Gate Poly Sheet ResistanceρPOLY1 15.0 22.0 30.0 Ω /o Poly2 Resistivity RSH_PL P 1.5 2 2.5 k Ω /o Metal-1 Sheet Resistance ρM1 35.0 45.0 65.0 m Ω /o Metal-2 Sheet Resistance ρM2 19.0 25.0 35.0 m Ω /o Passivation Thickness T PASS 200+900 nm oxide+nitride Min Channel Width 4.0 µm Diffusion Overlap of Contact 1.0 µm Min Spacing, Active Region, 5V 2.0 µm Poly Overlap of Contact 1.0 µm Poly1 Width/Space 1.4/2.0 µm Metal-1 Overlap of Contact 1.5 µm Poly2 Width/Space 3.0/2.0 µm Contact to Poly Space 1.5 µm Contact Width/Space 1.4x1.4 µm Minimum Pad Opening 65x65 µm Via Width/Space 1.4/1.6 µm Metal-1 Overlap of Via 1.0 µm Metal-1 Width/Space 2.6/1.6 µm Metal-2 Overlap of Via 1.0 µm Metal-2 Width/Space 2.6/1.6 µm Minimum Pad Opening 65x65 µm Gate Poly Width/Space 1.5/2.0 µm Minimum Pad to Pad Spacing 5.0 µm N+/P+ Width/Space 2.5/2.0 µm Minimum Pad Pitch 80 µm Layout Rules Physical Characteristics Process C1227