ILD213T

ILD213T SYC | Alldatasheet

Document overview

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Technical content

ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T Rev. 1.9, 27-Jul-11 1 Document Number: 83647 Optocoupler, Phototransistor Output, Dual Channel,

DESCRIPTION

The ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T come in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BV CEO of 70 V gives a higher safety margin compared to the industry standard of 30 V.

FEATURES

• Two channel coupler
• SOIC-8 surface mountable package
• Standard lead spacing of 0.05"
• Available only on ta pe and reel option (conforms to EIA standard 481-2)
• Isolation test voltage, 4000 V RMS
• Compatible with dual wave , vapor phase and IR reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A i179018-2 i179025

ORDERING INFORMATION

IL D 2## T PART NUMBER AGENCY CERTIFIED/PACKAGE CTR (%) 10 mA 1 mA UL, cUL 40 to 80 63 to 125 100 to 200  20  100  100 SOIC-8 ILD205T ILD206T ILD207T ILD211T ILD213T ILD217T ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage V R 6V Peak pulsed current 1 μs, 300 pps 1 A Continuous forward current per channel I F 30 mA Power dissipation P diss 50 mW SIOC-8 6.1 mm ILD213T OPTO A TRAN VCEO=70V CTR=100 S www.sycelectronica.com.ar

ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T www.vishay.com Vishay Semiconductors Rev. 1.9, 27-Jul-11 2 Document Number: 83647 Notes

• Stresses in excess of the abso lute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those give n in the operational sections of this document. Exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. Note
• Minimum and maximum values were tested requierements. Typical va lues are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. OUTPUT Collector emitter breakdown voltage BV CEO 70 V Emitter collector breakdown voltage BV ECO 7V Power dissipation per channel P diss 125 mW COUPLER Isolation test voltage t = 1 s V ISO 4000 V RMS Total package dissipation ambient (2 LEDs and 2 detectors, 2 channels) P tot 350 mW Storage temperature T stg - 55 to + 150 °C Operating temperature T amb - 55 to + 100 °C Soldering time from 260 °C (1) Tsld 10 s ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 10 mA V F 1.2 1.55 V Reverse current V R = 6 V I R 0.1 100 μA Capacitance V R = 0 V C O 25 pF OUTPUT Collector emitter breakdown voltage I C = 10 μA BV CEO 70 V Emitter collector breakdown voltage I E = 10 μA BV ECO 7V Collector emitter leakage current V CE = 10 V, IF = 0 A I CEO 55 0 n A Collector emitter capacitance V CE = 0 V C CE 10 pF COUPLER Collector emitter saturation voltage I F = 10 mA, IC = 2.5 mA V CEsat 0.4 V Capacitance (input to output) C IO 0.5 pF Resistance (input to output) R IO 100 G  CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT DC current transfer ratio VCE = 5 V, IF = 10 mA ILD205T CTR DC 40 80 % ILD206T CTR DC 63 125 % ILD207T CTR DC 100 200 % ILD211T CTR DC 20 % ILD213T CTR DC 100 % VCE = 5 V, IF = 1 mA ILD205T CTR DC 13 30 % ILD206T CTR DC 22 45 % ILD207T CTR DC 34 70 % ILD217T CTR DC 100 120 % ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT www.sycelectronica.com.ar

ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T www.vishay.com Vishay Semiconductors Rev. 1.9, 27-Jul-11 3 Document Number: 83647 Fig. 1 - Test Circuit, Non-Saturated Operation Fig. 2 - Test Circuit, Saturated Operation Fig. 3 - Switching Times SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT Delay time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) td 3μ s Rise time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) tr 3μ s Fall time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) tf 4.7 μs Storage time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) ts 0.3 μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) ton 6μ s Turn-off time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) toff 5μ s Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2) ton 3μ s Turn-off time VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2) toff 10 μs Channel I Channel II 95 10804 RG = 50 Ω tp tp = 50 µs T = 0.01 + 5 V IF 50 Ω 100 Ω IF IC = 2 mA; adjusted through input amplitude Oscilloscope R L = 1 MΩ CL = 20 pF Channel I Channel II 95 10843 RG = 50 Ω tp tp = 50 µs T = 0.01 + 5 V IC IF 50 Ω 1 kΩ IF = 10 mA Oscilloscope RL ≥ CL 20 pF 1 MΩ t p t t 10 % 90 % 100 % tr td ton ts tf toff IF IC tp Pulse duration td Delay time tr Rise time ton (= td + tr) Turn-on time ts Storage time t f Fall time toff (= ts + tf) Turn-off time 96 11698 www.sycelectronica.com.ar

ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T www.vishay.com Vishay Semiconductors Rev. 1.9, 27-Jul-11 4 Document Number: 83647 Note the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 4 - Forward Voltage vs. Forward Current Fig. 5 - Collector Current vs. Collector Emitter Voltage (NS) Fig. 6 - Leakage Current vs. Ambient Temperature Fig. 7 - Collector Current vs. Collector Emitter Voltage (sat) SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC 68 part 1) 55/100/21 Comparative tracking index CTI 175 399 V IOTM 6000 V VIORM 560 V PSO 350 mW ISI 150 mA TSI 165 °C Creepage distance 4 mm Clearance distance 4 mm Insulation thickness 0.2 mm 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0.1 1 10 100 VF - Forward Voltage (V) IF - Forward Current (mA) Tamb = 0 °C Tamb = 25 °C Tamb = 50 °C Tamb = 75 °C Tamb = 100 °C Tamb = - 55 °C 22327 02468 1 0 IC - Collector Current (mA) VCE - Collector Emitter Voltage (NS) (V) IF = 30 mA IF = 20 mA IF = 15 mA IF = 10 mA IF = 5 mA 0.001 0.1 1000 - 60 - 40 - 20 0 20 40 60 80 100 ICE0 - Leakage Current (nA) Tamb - Ambient Temperature (°C) IF = 0 mA VCE = 40 V VCE = 24 V VCE = 12 V 22329 0 0.1 0.2 0.3 0.4 IC - Collector Current (mA) VCE - Collector Emitter Voltage (sat) (V) IF = 25 mA IF = 10 mA IF = 5 mA IF = 2 mAIF = 1 mA www.sycelectronica.com.ar

ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T www.vishay.com Vishay Semiconductors Rev. 1.9, 27-Jul-11 5 Document Number: 83647 Fig. 8 - Normalized CTR (sat) vs. Ambient Temperature Fig. 9 - Normalized CTR (NS) vs. Ambient Temperature Fig. 10 - Normalized CTR (NS) vs. Forward Current Fig. 11 - Normalized CTR (sat) vs. Forward Current Fig. 12 - Switching Time vs. Load Resistance Fig. 13 - Power Dissipation vs. Ambient Temperature 0.2 0.4 0.6 0.8 1.0 1.2 - 60 - 40 - 20 0 20 40 60 80 100 NCTR - Normalized CTR (sat) Tamb - Ambient Temperature (°C) VCE =0 . 4 V Normalized to: I F = 10 mA, VCE = 5 V, Tamb = 25 °C IF = 5 mA IF = 10 mA IF = 1 mA 0.2 0.4 0.6 0.8 1.0 1.2 - 60 - 40 - 20 0 20 40 60 80 100 NCTR - Normalized CTR (NS) Tamb - Ambient Temperature (°C) Normalized to: I F = 10 mA, VCE = 5 V, Tamb = 25 °C IF = 10 mA IF = 5 mA IF = 1 mA 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 NCTR - Normalized CTR (NS) IF - Forward Current (mA) Normalized to: I F = 10 A, VCE = 5 V, Tamb = 25 °C Tamb = 0 °C Tamb = 100 °C Tamb = 75 °C Tamb = - 55 °C Tamb = 25 °C 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 NCTR - Normalized CTR (sat) IF - Forward Current (mA) VCE = 0.4 V Normalized to: I F = 10 mA, VCE = 5 V, Tamb = 25 °C Tamb = 0 °C Tamb = 75 °C Tamb = - 55 °C Tamb = 25 °C Tamb = 100 °C 22336 0.1 100 1000 0 5 10 15 20 ton, toff - Switching Time (μs) RL - Load Resistance (kΩ) ton (μs) toff (μs) VCE = 5 V, IF = 10 mA 100 150 200 250 300 350 400 - 55 - 30 - 5 20 45 70 95 120 Package Power Dissipation (mW) Tamb - Ambient Temperature (°C) Dual channel Single channel www.sycelectronica.com.ar

ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T www.vishay.com Vishay Semiconductors Rev. 1.9, 27-Jul-11 6 Document Number: 83647 PACKAGE DIMENSIONS in millimeters PACKAGE MARKING (example) Note

• Tape and reel suffix (T) is not part of the package marking. 0.91 0.36 4.32 1.14 6.6 R 0.13 1.27 i178020 ISO method A 40° 6.10 1.27 typ. 0.41 0.1 0.2 Lead coplanarity ± 0.001 max. 0.20 3.05 ± 0.05 CL R 0.25 max. 1.02 5° max. Pin one ID 3.91 ± 0.05 0.51 ± 0.10 2 plcs. 1.49 ± 0.05 3.18 ± 0.05 21764-105 D205 V YWW Y 68 www.sycelectronica.com.ar