HY0720L HUAYI | Alldatasheet
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www.hooyi.cc 160416 N Channel Enhancement Mode MOSFET Feature Pin Description 20V/6.5A RDS(ON) = 16 mΩ(typ.)@VGS = 4.5V RDS(ON) = 19 mΩ(typ.)@VGS = 2.5V RDS(ON) = 25 mΩ(typ.)@VGS = 1.8V Avalanche Rated ESD protected Reliable and Rugged Lead Free Devices Available
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Power Management in DC/DC Converter Switching application Ordering and Marking Information P roduct type XX Date Code WW Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- nation finish;which are fully compliant with RoHS.HOOYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice,and Advise customers to obtain the latest version of relevant information to verify before placing orders. SOT-23-3L N-Channel MOSFET D G S G D S G D S
www.hooyi.cc 160414 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwis Noted) VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V TJ Maximum Junction Temperture 150 °C TSTG Storage Temperture Range -55 to 150 °C IS Drain Current-Continuous Tc=25°C 6.5 A Mounted on Large Heat Sink IDM Pulsed Drain Current * Tc=25°C 26 A ID Continuous Drain Current Tc=25°C 6.5 A Tc=70°C 5.2 A PD Maximum Power Dissipation Tc=25°C 1.4 W Tc=70°C 0.9 W RJA Thermal Resistance, Junction -to-Ambient ** 90 ° C/W Note: * Repetitive ateing;pulse width limited by max.junction temperature. ** Surface mounted on 1 in aquare Cu board. Electrical Characteristics (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY0720L Unit Min Typ Max Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS=250uA 20 - - V IDSS Drain-to-Source Leakage Current VDS=20V, VGS - - 1 uA TJ=55°C - - 10 uA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250uA 0.4 0.7 1.0 V IGSS Gate-Source Leakage Current VGS=±10V,VDS=0V - - ±10 uA RDS(ON)* Drain-Source On-state Resistance VGS=4.5V,IDS=6.5A - 16 20 mΩ RDS(ON)* Drain-Source On-state Resistance VGS=2.5V,IDS=5A - 19 24 mΩ RDS(ON)* Drain-Source On-state Resistance VGS=1.8V,IDS=3A - 25 31 mΩ Diode Characteristics VSD Diode Forward Voltage ISD=1A,VGS=0V - 0.7 1 V trr Reverse Recovery Time ISD=1A,dISD/dt=100A/us - 9 - ns Qrr Reverse Recovery Charge - 10 - nC = 0V
www.hooyi.cc 160414 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY 0720L Unit Min Typ Max Dynamic Characteristics R G Gate Resistance V GS =0V V D S V,F=1 MHz Ω Ciss Input Capacitance V GS =0V, V DS Frequency=1.0MHz 700 pF Coss Output Capacitance 184 Crss Reverse Transfer Capacitance t d(ON) Turn on Delay Time V DD R G I DS A,V GS V ns T r Turn on Rise Time t OFF Turn off Delay Time T f Turn off Fall Time Gate Charge Characteristics Qg Total Gate Charge VDS = 16V, VGS = 4.5V， ID = 3A, nC Qgs Gate Source Charge Qgd Gate Drain Charge Note: * Pulse test; pulse width ≤ 300us，duty cycle ≤ 2% Customer Service Worldwide Sales and Service: sales@hooyi.cc Technical Support: Technology@hooyi.cc Xi’an Hooyi Semiconductor Technology Co., Ltd. East Side of 2# Plant,No.105,5th Fengcheng Road,Economic and Technological Development Zone,Xi'an,China TEL: (86-029) 86685706 FAX: (86-029) 86685705 E-mail: sales@hooyi.cc Web net: www.hooyi.cc