HY029N10P HUAYI | Alldatasheet
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Technical content
www.hymexa.com V1.1 N-ChannelEnhancementModeMOSFET Feature Pin Description 100V/270A RDS(ON)=2.6mΩ(typ.)@VGS =10V 100%AvalancheTested ReliableandRugged Lead-FreeandGreenDevicesAvailable (RoHSCompliant)
Applications
PowerSwitchingapplication UninterruptiblePowerSupply Ordering and Marking Information P B HY029N10 HY029N10 XYMXXXXXX XYMXXXXXX PackageCode P:TO-220FB-3L B:TO-263-2L DateCode XYMXXXXXX Note:HUAYI lead-freeproductscontainmoldingcompounds/dieattachmaterials and100% mattetinplateTermi- Nationfinish;whicharefullycompliantwithRoHS.HUAYI lead-freeproductsmeetorexceedthelead-Freerequire- mentsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines“Green” tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightinhomogeneous materialandtotal ofBrandCldoesnotexceed1500ppmby weight). HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothis pr -oductand/or tothisdocumentatanytimewithoutnotice. N-ChannelMOSFET TO-220FB-3L TO-263-2L
www.hymexa.com V1.1 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°CUnlessOtherwiseNoted) VDSS Drain-SourceVoltage 100 V VGSS Gate-SourceVoltage ±20 V TJ MaximumJunctionTemperature 175 °C TSTG StorageTemperatureRange -55to175 °C IS Source Current-Continuous(Body Diode) Tc=25°C 270 A Mounted on Large Heat Sink IDM PulsedDrainCurrent * Tc=25°C 725 A ID Continuous DrainCurrent Tc=25°C 270 A Tc=100°C 190 A PD MaximumPowerDissipation Tc=25°C 394.7 W Tc=100°C 197.3 W RJC ThermalResistance,Junction-to-Case 0.38 °C/W RJA Thermal Resistance, Junction-to-Ambient 62 °C/W EAS SinglePulsed-AvalancheEnergy* L=0.3mH 723.1 mJ Note: * Repetitiverating；pulsewidthlimitedbymax.junctiontemperature. SurfacemountedonFR-4board. * LimitedbyTJmax,starting TJ=25°C,L=0.3mH,VDS=80V,VGS=10V. Electrical Characteristics(Tc=25°CUnlessOtherwiseNoted) Symbol Parameter Test Conditions HY029N10 Unit Min Typ. Max Static Characteristics BVDSS Drain-SourceBreakdownVoltage VGS=0V,IDS=250μA 100 - - V IDSS Drain-to-Source Leakage Current VDS=100V,VGS=0V - - 1.0 μA TJ=125°C - - 50 μA VGS(th) GateThresholdVoltage VDS=VGS,IDS=250μA 2 3 4 V IGSS Gate-SourceLeakageCurrent VGS=±20V,VDS=0V - - ±100 nA RDS(ON)* Drain-SourceOn-StateResistance VGS=10V,IDS=50A - 2.6 3.3 mΩ Diode Characteristics VSD* DiodeForwardVoltage ISD=50A,VGS=0V - 0.8 1.3 V trr ReverseRecoveryTime ISD=50A,dISD/dt=100A/μs - 48 - ns Qrr ReverseRecoveryCharge - 78 - nC
www.hymexa.com V1.1 Electrical Characteristics (Cont.) (Tc=25°CUnlessOtherwiseNoted) Symbol Parameter Test Conditions HY029N10 Unit Min Typ. Max Dynamic Characteristics RG GateResistance VGS=0V,VDS=0V,F=1MHz - 3.6 - Ω Ciss InputCapacitance VGS=0V, VDS=50V, Frequency=1.0MHz - 10800 - pFCoss OutputCapacitance - 1624 - Crss ReverseTransfer Capacitance - 37 - td(ON) Turn-onDelayTime VDD=50V,RG=3.6Ω, IDS=50A,VGS=10V - 28 - ns Tr Turn-onRiseTime - 30 - td(OFF) Turn-offDelayTime - 95 - Tf Turn-offFallTime - 40 - Gate Charge Characteristics Qg TotalGateCharge VDS=50V,VGS=10V， ID=50A - 148.7 - nCQgs Gate-SourceCharge - 43.9 - Qgd Gate-DrainCharge - 27.1 - Note:*Pulsetest，pulsewidth≤300us，dutycycle≤2%
www.hymexa.com V1.1 Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit
www.hymexa.com V1.1 Device Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 TO-263-2L Tube 50
Package Information
A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54BSC e1 5.08BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00
www.hymexa.com V1.1 A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D1 8.5 8.7 8.9 D4 6.6 - - E 9.86 10.16 10.36 E5 7.06 - - e 2.54BSC H 14.7 15.1 15.5 H2 1.07 1.27 1.47 L 2 2.3 2.6 L1 1.4 1.55 1.7 L4 0.25BSC θ 0° 5° 9°
www.hymexa.com V1.1 Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperaturemin(Tsmin) Temperaturemax(Tsmax) Time(TsmintoTsmax)(ts) 100°C 150°C 60-120seconds 150°C 200°C 60-120seconds Averageramp-uprate (TsmaxtoTP) 3°C/secondmax. 3°C/secondmax. Liquidoustemperature(TL) Timeatliquidous(tL) 183°C 60-150seconds 217°C 60-150seconds PeakpackagebodyTemperature (Tp)* SeeClassificationTempintable1 SeeClassificationTempintable2 Time(tP)within5°Cofthe specified classificationtemperature(Tc) 20seconds 30**seconds Averageramp-downrate(TptoTsmax) 6°C/secondmax. 6°C/secondmax. Time25°Ctopeaktemperature 6minutesmax. 8minutesmax. *Toleranceforpeakprofile Temperature(Tp)is definedas asupplierminimumandausermaximum. **Tolerancefortimeatpeakprofiletemperature(tp)isdefinedasasupplier minimumandauser maximum.
www.hymexa.com V1.1 Table1.SnPbEutectic Process–ClassificationTemperatures (Tc) Package Thickness Volume mm³ <350 Volume mm³ ≥350 ＜2.5mm 235°C 220°C ≥2.5mm 220°C 220°C Table2.Pb-freeProcess –ClassificationTemperatures (Tc) Package Thickness Volume mm³ <350 Volume mm³ 350-2000 Volume mm³ ≥2000 <1.6mm 260°C 260°C 260°C 1.6mm–2.5mm 260°C 250°C 245°C ≥2.5mm 250°C 245°C 245°C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22,B102 5Sec,245°C PRECON JESD-22,A113 30°C/60%/192Hrs HTRB JESD-22,A108 168/500/1000Hrs,Bias@150°C HTGB JESD-22,A108 168Hrs/500hr/1000hr,Vgs100% @150°C PCT JESD-22,A102 96Hrs,100%RH,2atm,121°C TCT JESD-22,A104 500Cycles,-55°C~150°C Customer Service WorldwideSales andService:sales@hymexa.com TechnicalSupport: Technology@hymexa.com HuayiMicroelectronics Co.,Ltd. No.8928,ShangjiRoad,EconomicandTechnologicalDevelopmentZone,Xi'an,China TEL:(86-029) 86685706 FAX:(86-029)86685705 E-mail:sales@hymexa.com Webnet: www.hymexa.com