HY050N08C2 HUAYI | Alldatasheet
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Technical content
www.hymexa.com V2.0 SingleN-ChannelEnhancementModeMOSFET Feature Pin Description 80V/80A RDS(ON)=5.2mΩ(typ.)@VGS =10V 100%AvalancheTested ReliableandRugged Halogen-FreeDevicesAvailable (RoHSCompliant)
Applications
HighFrequencyPoint-of-LoadSynchronous BuckConverter PowerToolApplication NetworkingDC-DCPowerSystem Ordering and Marking Information HY050N08 XYMXXXXXX PackageCode C2:PPAK5*6-8L DateCode XYMXXXXXX Note:HUAYI lead-freeproductscontainmoldingcompounds/dieattachmaterials and100% mattetinplateTermi- Nationfinish;whicharefullycompliantwithRoHS.HUAYI lead-freeproductsmeetorexceedthelead-Freerequire- mentsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines“Green” tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightinhomogeneous materialandtotal ofBrandCldoesnotexceed1500ppmby weight). HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothis pr -oductand/or tothisdocumentatanytimewithoutnotice. PPAK5*6-8LPin1 D D D D S S S G SingleN-ChannelMOSFET S S S G D D D D
www.hymexa.com V2.0 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°CUnlessOtherwiseNoted) VDSS Drain-SourceVoltage 80 V VGSS Gate-SourceVoltage ±20 V TJ MaximumJunctionTemperature 150 °C TSTG StorageTemperatureRange -55to150 °C IS Source Current-Continuous(Body Diode) Tc=25°C 80 A Mounted on Large Heat Sink IDM PulsedDrainCurrent * Tc=25°C 360 A ID Continuous DrainCurrent Tc=25°C 80 A Tc=100°C 50 A PD MaximumPowerDissipation Tc=25°C 69.4 W Tc=100°C 27.7 W RJC ThermalResistance,Junction-to-Case 1.8 °C/W RJA Thermal Resistance, Junction-to-Ambient 45 °C/W EAS SinglePulsed-AvalancheEnergy* L=0.3mH 306.2 mJ Note: * Repetitiverating；pulsewidthlimitedbymax.junctiontemperature. SurfacemountedonFR-4board. * Limitedby TJmax,startingTJ=25°C,L=0.3mH,VDS=68V., VGS=10V. Electrical Characteristics(Tc=25°CUnlessOtherwiseNoted) Symbol Parameter Test Conditions HY050N08 Unit Min Typ. Max Static Characteristics BVDSS Drain-SourceBreakdownVoltage VGS=0V,IDS=250μA 80 - - V IDSS Drain-to-Source Leakage Current VDS=85V,VGS=0V - - 1 μA TJ=125°C - - 50 μA VGS(th) GateThresholdVoltage VDS=VGS,IDS=250μA 2 3 4 V IGSS Gate-SourceLeakageCurrent VGS=±20V,VDS=0V - - ±100 nA RDS(ON)* Drain-SourceOn-StateResistance VGS=10V,IDS=20A - 5.2 5.8 mΩ Diode Characteristics VSD* DiodeForwardVoltage ISD=20A,VGS=0V - 0.8 1.2 V trr ReverseRecoveryTime ISD=20A,dISD/dt=100A/μs - 23 - ns Qrr ReverseRecoveryCharge - 58 - nC
www.hymexa.com V2.0 Electrical Characteristics (Cont.) (Tc=25°CUnlessOtherwiseNoted) Symbol Parameter Test Conditions HY050N08 Unit Min Typ. Max Dynamic Characteristics RG GateResistance VGS=0V,VDS=0V,F=1MHz - 3.25 - Ω Ciss InputCapacitance VGS=0V, VDS=25V, Frequency=1.0MHz - 4075 - pFCoss OutputCapacitance - 1850 - Crss ReverseTransferCapacitance - 78 - td(ON) Turn-onDelayTime VDD=40V,RG=3.3Ω, IDS=20A,VGS=10V - 18 - ns Tr Turn-onRiseTime - 22 - td(OFF) Turn-offDelayTime - 26 - Tf Turn-offFallTime - 16 - Gate Charge Characteristics Qg TotalGateCharge VDS =68V,VGS=10V, ID=20A - 54 - nCQgs Gate-SourceCharge - 13 - Qgd Gate-DrainCharge - 14 - Note:*Pulsetest，pulsewidth≤300us，dutycycle≤2%
www.hymexa.com V2.0 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Gate Charge Test Circuit and Waveforms
www.hymexa.com V2.0 Device Per Unit Package Type Unit Quantity PPAK5*6-8L Reel 5000
Package Information
PPAK5*6-8L
www.hymexa.com V2.0 Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperaturemin(Tsmin) Temperaturemax(Tsmax) Time(TsmintoTsmax)(ts) 100°C 150°C 60-120seconds 150°C 200°C 60-120seconds Averageramp-uprate (TsmaxtoTP) 3°C/secondmax. 3°C/secondmax. Liquidoustemperature(TL) Timeatliquidous(tL) 183°C 60-150seconds 217°C 60-150seconds PeakpackagebodyTemperature (Tp)* SeeClassificationTempintable1 SeeClassificationTempintable2 Time(tP)within5°Cofthe specified classificationtemperature(Tc) 20seconds 30**seconds Averageramp-downrate(TptoTsmax) 6°C/secondmax. 6°C/secondmax. Time25°Ctopeaktemperature 6minutesmax. 8minutesmax. *Toleranceforpeakprofile Temperature(Tp)is definedas asupplierminimumandausermaximum. **Tolerancefortimeatpeakprofiletemperature(tp)isdefinedasasupplier minimumandauser maximum.
www.hymexa.com V2.0 Table1.SnPbEutectic Process–ClassificationTemperatures (Tc) Package Thickness Volume mm³ <350 Volume mm³ ≥350 ＜2.5mm 235°C 220°C ≥2.5mm 220°C 220°C Table2.Pb-freeProcess –ClassificationTemperatures (Tc) Package Thickness Volume mm³ <350 Volume mm³ 350-2000 Volume mm³ ≥2000 <1.6mm 260°C 260°C 260°C 1.6mm–2.5mm 260°C 250°C 245°C ≥2.5mm 250°C 245°C 245°C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22,B102 5Sec,245°C PRECON JESD-22,A113 30°C/60%/192Hrs HTRB JESD-22,A108 168/500/1000Hrs,Bias@150°C HTGB JESD-22,A108 168Hrs/500hr/1000hr,Vgs100% @150°C PCT JESD-22,A102 96Hrs,100%RH,2atm,121°C TCT JESD-22,A104 500Cycles,-55°C~150°C Customer Service WorldwideSales andService:sales@hymexa.com TechnicalSupport: Technology@hymexa.com HuayiMicroelectronics Co.,Ltd. No.8928,ShangjiRoad,EconomicandTechnologicalDevelopmentZone,Xi'an,China TEL:(86-029) 86685706 FAX:(86-029)86685705 E-mail:sales@hymexa.com Webnet: www.hymexa.com