HYG012N08NS1TA HUAYI | Alldatasheet
Document overview
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Technical content
www.hymexa.com V1.0 N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/420A RDS(ON)=0.9 mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) TOLL
Applications
Switching application Power management for inverter systems Battery management Ordering and Marking Information TA G012N08 XYMXXXXXX Package Code TA:TOLL Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. N-Channel MOSFET Pin 1 Pin 8 Pin 2,3,4,5,6,7,8 Pin 1 Tab Tab
www.hymexa.com V1.0 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage ±20 V TJ Junction Temperature Range -55 to 175 °C TSTG Storage Temperature Range -55 to 175 °C IS Source Current-Continuous(Body Diode) Tc=25°C 420 A Mounted on Large Heat Sink IDM Pulsed Drain Current * Tc=25°C 1500 A ID Continuous Drain Current Tc=25°C 420 A Tc=100°C 297 A PD Maximum Power Dissipation Tc=25°C 428.5 W Tc=100°C 214.3 W RJC Thermal Resistance, Junction-to-Case 0.35 ° C/W RJA Thermal Resistance, Junction -to-Ambient 45 ° C/W EAS SinglePulsed-Avalanche Energy * L=0.3mH 1150 mJ Note: * Repetitive rating ；pulse width limited by max.junction temperature. Surface mounted on 1in2 FR-4 board. * Limited by T Jmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG012N08NS1 Unit Min Typ. Max Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS= 250μA 80 - - V IDSS Drain-to-Source Leakage Current VDS=80V,VGS=0V - - 1 μA TJ=125°C - - 50 μA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250μA 2 3 4 V IGSS Gate-Source Leakage Current VGS=±20V,VDS=0V - - ±100 nA RDS(ON) Drain-Source On-State Resistance VGS=10V,IDS=100A - 0.9 1.2 mΩ Diode Characteristics VSD Diode Forward Voltage ISD=100A,VGS=0V - 0.82 1.2 V trr Reverse Recovery Time ISD=100A,dISD/dt=100A/μs - 113 - ns Qrr Reverse Recovery Charge - 205 - nC
www.hymexa.com V1.0 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG012N08NS1 Unit Min Typ. Max Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.0 - Ω Ciss Input Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz - 12217 - pF Coss Output Capacitance - 6886 - Crss Reverse Transfer Capacitance - 470 - td(ON) Turn-on Delay Time VDD=40V,RG=4.0Ω, IDS= 100A,VGS= 10V - 45 - ns Tr Turn-on Rise Time - 126 - td(OFF) Turn-off Delay Time - 135 - Tf Turn-off Fall Time - 136 - Gate Charge Characteristics Qg Total Gate Charge VDS =64V,VGS=10V,IDs=100A - 240 - nC Qgs Gate-Source Charge - 62 - Qgd Gate-Drain Charge - 79 - Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
www.hymexa.com V1.0 Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit
www.hymexa.com V1.0 Device Per Unit Package Type Unit Quantity TOLL Reel 1200
Package Information
www.hymexa.com V1.0 Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) 100 ° C 150 ° C 60-120 seconds 150 ° C 200 ° C 60-120 seconds Average ramp-up rate (Tsmaxto TP) 3 ° C/second max. 3° C/second max. Liquidous temperature (TL) Time at liquidous (tL) 183 ° C 60-150 seconds 217 ° C 60-150 seconds Peak package body Temperature (Tp)* See Classification Temp in table 1 SeeClassification Tempin table 2 Time (tP) within 5° C of the specified classification temperature (Tc) 20 seconds 30** seconds Average ramp-down rate (Tpto Tsmax) 6 ° C/second max. 6 ° C/second max. Time 25° C to peak temperature 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
www.hymexa.com V1.0 Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness Volume mm³ <350 Volume mm³ ≥350 ＜2.5 mm 235 ° C 220 ° C ≥2.5 mm 220 ° C 220 ° C Table 2.Pb-free Process – Classification Temperatures (Tc) Package Thickness Volume mm³ <350 Volume mm³ 350-2000 Volume mm³ ≥2000 <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ≥2.5 mm 250 ° C 245 ° C 245 ° C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B102 5 Sec, 245° C PRECON JESD-22, A113 85° C/85%RH，168Hrs HTRB JESD-22, A108 168/500/1000 Hrs, Bias @ 150°C HTGB JESD-22, A108 168 /500/1000Hrs, Vgs100% @ 150° C PCT JESD-22, A102 96 Hrs, 100%RH, 2atm, 121° C TCT JESD-22, A104 250/500/1000 Cycles, -55° C~150° C Customer Service Worldwide Sales and Service: sales@hymexa.com Technical Support:Technology@hymexa.com Huayi Microelectronics Co., Ltd. No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China TEL: (86-029) 86685706 FAX: (86-029) 86685705 E-mail: sales@hymexa.com Web net: www.hymexa.com