HY0720C HUAYI | Alldatasheet
Document overview
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Technical content
Features
R DS(ON) =1 3 m (typ.) @ V GS =4.5V High Cell Desity for low Rds(on) Halogen Device Available Battery pack protection Power tool , Cell phone C C : DFN6L(0203) Ordering and Marking Information C : Green Device Date Code Package Code Assembly Material YYXXX WW HY0720 YYXXXJWW C
Applications
R DS(ON) = 16.5 m(typ.) @ V GS =2.5V 3 4 Bottom Drain Contact Dual N -ChannelDual N MOSFET www.hymexa.com V1.0 G1 S1 S1 DFN6L(0203) G2 S2 S2 D1/D2 HUAYI Termination fi nish;w hi ch ar e f ully c om plian t wi th R oHS . HUAYI lead fr ee pr oduc ts m eet or exceed th e lead- Note: HUAYI lead -fr ee pro ducts conta i n m oldi ng c ompoun ds /di e at tac h m ater ial s and 100% m atte tin pl ate Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). reserves the r igh t to ma ke c hanges , corr ect ions, enh ancements, m odifi cations, and impr ovements to this pr-oduct and/or to this document at any time without notice.
1.00 1.56 5.5 28** 1.7 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings C =25°C Unless Otherwise Noted) V DSS Drain-Source Voltage V GSS Gate-Source Voltage ±12 V T J Maximum Junction Temperature 150 °C T STG Storage Temperature Range -55 to 150 °C I S Diode Continuous Forward Current T C =25°C A Mounted on Large Heat Sink I DM T C =25°C A T C =25°C I D Continuous Drain Current T C =70°C A T C =25°C P D Maximum Power Dissipation T c =70°C W R JA Thermal Resistance-Junction to Ambient °C/W
Electrical Characteristics
C = 25C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250A - V V DS =V , V GS =0V I DSS Zero Gate Voltage Drain Current V GS(th) Gate Threshold Voltage V DS GS , I DS =250A 0.5 0.8 1.5 V I GSS Gate Leakage Current V GS =±8 V, V DS =0V - - ±10 uA Notej ** Drain current is limited by junction temperature Pulsed Drain Current * * Repetitive rating ; pulse width limiited by junction temperature HY0720C 1.1 1513R DS(ON) Drain-Source On-state Resistance V GS =4.5V,I DS =7A - m Diode Characteristics V SD Diode Forward Voltage I SD =1 A, V GS =0V - 0.74 V 1916.5V GS =2.5V, I DS =5.5 A - m www.hymexa.com V1.0
Electrical Characteristics (Cont.) (TC = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance - - Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, Frequency =1.0MHz - pF td(ON) T urn-on Delay Time - Tr Turn -on Rise Time td(OFF) Turn -off Delay Time - Tf Turn -off Fall Time VDD=10V, RG=6 , IDS =1A, VGS=4.5 - 28 ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge - Qgd Gate- Drain Charge VDS=16V, VGS=4 .5V, IDS =3 .5A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. HY0720C w ww.hymexa.com V1.0
Typical Operating Characteristics 0.1 1 10 0.1 100 I D - Drain Current (A) Drain Current 0 20 40 60 80 100 120 140 160 180 200 T C =25 o C,V G =4.5V Power Dissipation P tot - Power (W) 0 20 40 60 80 100 120 140 160 180 200 0.5 1.0 1.5 2.0 2.5 T C =25 o C 100 400 Safe Operation Area V DS - Drain - Source Voltage (V) I D - Drain Current (A) 100us 10ms 1ms Rds(on) Limit DC T c - Temperature (°C) T c -Case Temperature (°C)Case HY0720C 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t ,T I M E( s e c ) R JA (t )= r (t) *R JA R JA =80°C/W SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D=0 . 5 Normalized Transient Thermal Resistance Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve P(pk) t t T - J T A =P * R JA (t) Duty Cycle , D = t1 / t2 www.hymexa.com V1.0
V DS - Drain-Source Voltage (V) I D - Drain Current (A) Output Characteristics R DS(ON) - On - Resistance (m) Drain-Source On Resistance I D - Drain Current (A) V GS - Gate - Source Voltage (V) R DS(ON) - On - Resistance (m) T j - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Vlotage Typical Operating Characteristics (Cont.) Drain-Source On Resistance 0 0.5 1 1.5 2 2.5 2.0V 1.5V V GS = 2.5,3,3.5,4.5V 0246 8 1 0 012345 6 I DS =7A -50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 I DS =250 A V GS =2.5V HY0720C V GS =4.5V www.hymexa.com V1.0
Drain-Source On Resistance Normalized On Resistance T j - Junction Temperature (°C) V SD - Source-Drain Voltage (V) Source-Drain Diode Forward I S - Source Current (A) V DS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge Q G - Gate Charge (nC) V GS - Gate-source Voltage (V) Typical Operating Characteristics (Cont.) 0 4 6 8 12 14 V DS =16V I DS = 3.5A 0 5 10 15 20 200 300 400 500 700 800 900 1000 Frequency=1MHz Crss Coss Ciss 0.01 0.1 T j =150 o C T j =25 o C -50 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 R ON j =25 o C:13m V GS = 4.5V I DS = 7A HY0720C www.hymexa.com V1.0
Package Information
www.hymexa.com V1.0
Package Type Unit Quantity DFN6L(0203) Reel 3000 HY0720C www.hymexa.com V1.0 Customer Se rvice Worldwide Sales and Service: sales@hymexa.com Technic al S upport: Te chno logy@h ymex a.com Xi'an Hu ay i Mic roe lectron ics Co., Lt d. No.8928,Shangji Road,Ec onomic and Technological Development Zone,Xi'an,China TEL: (86-029) 86685706 FAX: (86-029) 8 668570 5 E-mail: sale s@h ymexa.com Web net: www.hym exa.com