HWL30YRF_V1_15 HW | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Low Cost GaAs Power FET
- • •• Class A or Class AB Operation
- Typical 16.5 dB Gain
- 5V to 10V Operation
Description
The HWL30YRF is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Absolute Maximum Ratings VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current I DSS IG Gate Current 3 mA TCH Channel Temperature 175 °C TSTG Storage Temperature -65 to +175 °C PT * Power Dissipation 6W * mounted on an infinite heat sink. Outline Dimensions Electrical Specifications (TA=25 °C) f = 2400 MHz for all RF Tests Symbol Parameters & Conditions Units Min. Typ. Max. IDSS Saturated Current at V DS =5V, V GS =0V mA 500 600 900 VP Pinch-off Voltage at V DS =5V, I D=30mA V -3.5 -2.0 -1.5 gm Transconductance at V DS =5V, I D=300mA mS - 300 - Rth Thermal Resistance °C/W - 15 25 P1dB Power Output at Test Points VDS =10V, I D=0.5I DSS dBm 30 31 - G1dB Gain at 1dB Compression Point VDS =10V, I D=0.5I DSS dB 15 16.5 - PAE Power-Added Efficiency (P OUT = P 1dB ) VDS =10V, I D= I D=0.5I DSS % 35 45 -
Typical Performance at 25 °° °°C Output Power & Efficiency & Gain vs Input Power @ f=2.4GHz, Vds=10.0V, Ids= 0.5 Idss 0 5 10 15 20 Pin (dBm) Po (dBm) Gain PAE (%) Po Gain Eff Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=10.0V, Ids= 0.5 Idss 0 2 4 6 8 10 12 14 16 18 20 22 Pin (dBm) Po (dBm) Gain PAE (%) Po Gain Eff
(25,6) (175,0) 0 50 100 150 200 Case Temperature,TC (℃) Total Power Dissipation,PT (W) Power Derating Curve
Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES V DS =10V, I DS =0.5I DSS