HWL23NPB HW | Alldatasheet
Document overview
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- PDF pages: 7
Technical content
Features
- Plastic Packaged GaAs Power FET
- • •• Suitable for Commercial Wireless
Applications
- • •• High Efficiency
- • •• 3V to 6V Operation
Description
The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. Absolute Maximum Ratings VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current I DSS IG Gate Current 1mA TCH Channel Temperature 150 °C TSTG Storage Temperature -65 to +150 °C PT Power Dissipation 0.7 Watt Outline Dimensions Electrical Specifications (T A=25 °C) f=1900 MHz for all RF Tests Symbol Parameters & Conditions Units Min. Typ. Max. IDSS Saturated Current at V DS =5V, V GS =0V mA 90 110 - VP Pinch-off Voltage at V DS =5V, I D=5.5mA V -3.5 -2.0 -1.5 gm Transconductance at V DS =5V, I D=55mA mS - 60 - Rth Thermal Resistance °C/W - 200 - P1dB Power Output at Test Points VDS =3V, I D=0.5I DSS VDS =5V, I D=0.5I DSS dBm 16.5 19.5 17.5 21.0 G1dB Gain at 1dB Compression Point VDS =3V, I D=0.5I DSS VDS =5V, I D=0.5I DSS dB 13.0 14.0 PAE Power-Added Efficiency (P OUT = P 1dB ) VDS =3V, I D=0.5I DSS VDS =5V, I D=0.5I DSS 35.0 45.0 2 3 Pin 1: Source Pin 2: Gate Pin 3: Drain
Typical Performance at 25 °° °°C Output Power & Efficiency vs Vds @ f=0.9GHz,Ids=55mA 1 2 3 4 5 6 Vds (V) Po (dBm) PAE (%) Po PAE Output Power & Efficiency vs Vds @ f=1.9GHz,Ids=55mA 1 2 3 4 5 6 Vds (V) Po (dBm) PAE (%) Po PAE
Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=3V -8 -4 0 4 8 12 Pin (dBm) Po (dBm) Gain PAE (%) Po Gain Eff Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=3V -8 -4 0 4 8 12 16 Pin (dBm) Po (dBm) Gain PAE (%) Po Gain Eff
Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=5V -8 -4 0 4 8 12 Pin (dBm) Po (dBm) Gain PAE (%) Po Gain Eff Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=5V -8 -4 0 4 8 12 16 Pin (dBm) Po (dBm) Gain PAE (%) Po Gain Eff
Output Power & Efficiency & Gain vs Frequency @ Vds=3V, Ids=55mA Po (dBm) Gain PAE (%) Po Gain PAE Output Power & Efficiency & Gain vs Frequency @ Vds=5V, Ids=55mA Po (dBm) Gain PAE (%) Po Gain PAE
(150,0) (25,0.7) 0.5 0 50 100 150 225 Case Temperature,T C (℃) Total Power Dissipation,P T (W)
Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES V DS =3V, I DS =0.5I DSS S-MAGN AND ANGLES V DS =5V, I DS =0.5I DSS