HWC27NC HW | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Low Cost GaAs Power FET
- • •• Class A or Class AB Operation
- • •• 11 dB Typical Gain at 4 GHz
- • •• 5V to 10V Operation
Description
The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications. Absolute Maximum Ratings VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current I DSS IG Gate Current 2mA TCH Channel Temperature 175 °C TSTG Storage Temperature -65 to +175 °C PT * Power Dissipation 3.5W * mounted on an infinite heat sink Outline Dimensions 650 435 215 0.0 0.0 58.5 344.5 400 Source Source Electrical Specifications (T A=25 °C) f = 4 GHz for all RF Tests Symbol Parameters & Conditions Units Min. Typ. Max. IDSS Saturated Current at V DS =3V, V GS =0V mA 300 400 600 VP Pinch-off Voltage at V DS =3V, I D=20mA V -3.5 -2.0 -1.5 gm Transconductance at V DS =3V, I D=200mA mS - 250 - P1dB Power Output at Test Points VDS =10V, I D=0.5 I DSS dBm 27 28 - G1dB Gain at 1dB Compression Point VDS =10V, I D=0.5 I DSS dB 9 10 - PAE Power-Added Efficiency (P OUT = P 1dB ) VDS =10V, I D=0.5 I DSS % 30 40 - Unit: µ m Thickness: 100 ± 5 Chip size ± 50 Bond Pads 1-2 (Gate): 60 x 60 Bond Pads 3-4 (Drain): 60 x 60
C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES V DS =10V, I DS =0.5I DSS Bonding Manner Gate, drain pad: 1 wire on each pad Source pad: 2 wires on each side