HWF1681RA HW | Alldatasheet

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Hexawave Inc. 2 Prosperity Road II, Science-Based Ind ustrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw All specifications are subject to change without notice. Features Features Features Features

  • High Output Power: High Output Power: High Output Power: High Output Power: P 1dB =34.5 dBm (typ.)
  • High Gain: High Gain: High Gain: High Gain: G L =15 Db (typ.)
  • High Efficiency: High Efficiency: High Efficiency: High Efficiency: PAE =43% (typ.)
  • High Linearity: High Linearity: High Linearity: High Linearity: IP 3 =48 dBm (typ.)
  • Class A or Class AB Operation Class A or Class AB Operation Class A or Class AB Operation Class A or Class AB Operation
  • • •• Low Cost Low Cost Low Cost Low Cost Descripti Descripti Descripti Description on on on The HWF1681RA is a high power GaAs MESFET designed for various RF and Microwave applications. It is p resently offered in a low cost, surface-mountable ceramic pa ckage. Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings V DS [1] Drain to Source Voltage +15V V GS Gate to Source Voltage -5V I D Drain Current I DSS I G Gate Current 6 mA T CH Channel Temperature 175 °C T STG Storage Temperature -65 to +175 °C P T [2] Power Dissipation 12 W [1] Hexawave recommends that the quiescent drain-so urce operating voltage (V DS ) should not exceed 10 Volts. [2] Mounted on an infinite heat sink. Outline Dimensions Outline Dimensions Outline Dimensions Outline Dimensions Electrical Specifications at 25 °° °° [3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP 3 Symbol Parameters Conditions Units Min. Typ. Max. IDSS Saturated Drain Current V DS =3V, V GS =0V mA 900 1200 1600 VP Pinch-off Voltage V DS =3V, I DS =60 mA V -3.5 -2.0 -1.5 gm Transconductance V DS =3V, I DS =600 mA mS - 600 - Rth Thermal Resistance Channel to Case °C/W - 9 12 P1dB Output Power @1 dB Gain dBm 33.5 34.5 - GL Linear Power Gain dB 14 15 - PAE Power-added Efficiency (P out = P 1dB ) VDS =10V IDS =0.5I DSS % - 43 - IP 3 Third-order Intercept Point [3] f=2.4 GHz dBm - 48 -

Output Power, Efficiency & Gain vs. Input Power VDS =10V, I DS =0.5I DSS f=2.4GHz η add (%) Pin (dBm) Gain (dB) P out (dBm) Pin (dBm) 5 7 9 11 13 15 17 19 21 23 25 η add Gain Pout η add Power Derating Curve (25,12.0) (175,0) 0 50 100 150 200 Case Temperature,T C (℃) Total Power Dissipation,P T (W)

Typical S-Parameters (Common Source, T A=25 °C, V DS =10V, I DS =0.5I DSS ) Freq S11 S 21 S 12 S 22