HVV1214-025S HVVI | Alldatasheet
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HVVi Semiconductors, Inc. For additional informatio n, visit: www.hvvi.com April 23 2008 10235 S. 51 st St. Suite 100 HVVi Semiconductors, Inc. Confidenti al Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Company! The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz.
- High Power Gain
- Excellent Ruggedness
- 48V Supply Voltage The device resides in a Surface Mount Transistor Package with a ceramic lid. The SMT package style is qualified for gross leak test – MIL-STD-750D, Method 1071.6, Test Condition C. The HVV1214-25 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 µA IGSS Gate Leakage Current VGS=5V,VDS=0V <1 µA G P 1 Power Gain P OUT =25W,F=1200,1400MHz 17.5 dB IRL 1 Input Return Loss POUT =25W,F=1200,1400MHz 8 dB ηD
1 Drain Efficiency P OUT =25W,F=1200,1400MHz 49 %
PD 1 Pulse Droop P OUT =25W,F=1200,1400MHz <0.2 dB 1.) Under Pulse Conditions: Pulse Width = 200 µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA 2.) Rated at T CASE = 25°C Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 2 A PD
2 Power Dissipation 116 W
TS Storage Temperature -65 to +200 TJ Junction Temperature 200 °C Symbol Parameter Max Unit θJC 1 Thermal Resistance 1.5 °C/W Symbol Parameter Test Condition Max Units LMT 1 Load Mismatch Tolerance POUT = 25W F = 1400 MHz 20:1 VSWR RUGGEDNESS PACKAGE THERMAL C HARACTERISTICS ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
FEATURES
DESCRIPTION
HVVi Semiconductors, Inc. For additional informatio n, visit: www.hvvi.com April 23 2008 10235 S. 51 st St. Suite 100 HVVi Semiconductors, Inc. Confidenti al Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Company! PACKAGE DIMENSIONS GATE HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. Note: Drawing is not actual size. SOURCE DRAIN