HVV1012-250-EK

HVV1012-250 HVVI | Alldatasheet

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HVV1012-250 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS09A 12/11/08

FeatuRes

desCRiPtion

oRdeRing inFoRMation

• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme High voltage vertical technology is well suited for high power pulsed applications in the L-Band including Airborne DME, IFF , TCAS and Mode-S applications. The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage HVVFET™ technology produces over 250W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. Device Part Number: HVV1012-250 Demo Kit Part Number: HVV1012-250-EK Available through Richardson Electronics (http://rfwireless.rell.com/) Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10μs and pulse period = 1ms. MODE FREQUENCY VDD IDQ Power GAIN EFFICIENCY IRL (MHz) (V) (mA) (W) (dB) (%) (dB) Class AB 1150 50 100 250 19.5 48 20:1

HVV1012-250 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS09A 12/11/08 eleCtRiCal CHaR aCteRistiCs Pulse CHaR aCteRistiCs tHeRMal CHaR aCteRistiCs Ruggedness PeRFoRManCe HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS09A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserve d. 2 HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! 1.) NOTE: All parameters measured under pulsed conditions at 250W output power measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. 

ELECTRICAL CHARACTERISTICS

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS09A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserve d. 2 HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! 1.) NOTE: All parameters measured under pulsed conditions at 250W output power measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.  The HVV1012-250 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. 1NOTE: All parameters measured under pulsed conditions at 250W output power measured at the 10% point of the pulse with pulse width = 10μsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broad- band matched test fixture. 2NOTE: Amount of gate voltage required to attain nominal quiescent current. Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=48V - 50 200 μA IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 μA GP1 Power Gain F=1150MHz 17.5 19.5 - dB IRL1 Input Return Loss F=1150MHz - -7 -4 dB ηD1 Drain Efficiency F=1150MHz 46 48 - % VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=100mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300μA 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Unit Tr

1 Rise Time F=1150MHz - <40 50 nS

1 Fall Time F=1150MHz - <15 50 nS

PD1 Pulse Droop F=1150MHz - 0.25 0.5 dB

HVV1012-250 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS09A 12/11/08 HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS09A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserve d. 3 HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! Zo = 10  ZIN ZOUT 1025MHz 1025MHz

HVV1012-250 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS09A 12/11/08 Demonstration Board Outline Demonstration Circuit Board Picture HVV1012-250 Demonstration Circuit Board Bill of Materials (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS09A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserve d. 4 HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! Demonstration Board Outline Demonstration Circuit Board Picture (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVV1012-250 Demonstration Circuit Board Bill of Materials HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS09A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserve d. 4 HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! Demonstration Board Outline Demonstration Circuit Board Picture (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVV1012-250 Demonstration Circuit Board Bill of Materials

HVV1012-250 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS09A 12/11/08 PaCKage diMensions HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS09A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserve d. 5 HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! PACKAGE DIMENSIONS HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. Note: Drawing is not actual size. SOURCE DRAIN GATE Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc.