HVV1012-100 HVVI | Alldatasheet

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HVV1012-100 PRODUCT OVERVIEW L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO04X5 10/13/08 Preliminary HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO04X2 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 06/10/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1012-100 L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty The innovative Semiconductor Company! The high power HVV1012-100 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1025 MHz to 1150 MHz.

  • High Power Gain
  • Excellent Ruggedness
  • 48V Supply Voltage The device resides in a two-lead metal flanged package with liquid crystal polymer lid. The NI-400 package style is qualified for gross leak test – MIL-STD-750D, Method 1071.6, Test Condition C. The HVV1012-100 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 µA IGSS Gate Leakage Current VGS=5V,VDS=0V <1 µA GP 1 Power Gain POUT=100W,F=1025,1150MHz 20.5 dB IRL1 Input Return Loss POUT=100W,F=1025,1150MHz 11 dB džD

1 Drain Efficiency POUT=100W,F=1025,1150MHz 50 %

PD1 Pulse Droop POUT=100W,F=1025,1150MHz <0.3 dB 1.) Under Pulse Conditions: Pulse Width = 10 µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 8 A PD Power Dissipation 1250 W TS Storage Temperature -65 to +200 TJ Junction Temperature 200 °C Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance P OUT = 100W F = 1150 MHz 20:1 VSWR Symbol Parameter Max Unit LJJC 1 Thermal Resistance 0.14 °C/W PACKAGE RUGGEDNESS THERMAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

FEATURES

DESCRIPTION

HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO04X2 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 06/10/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1012-100 L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty The innovative Semiconductor Company! The high power HVV1012-100 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1025 MHz to 1150 MHz.

  • High Power Gain
  • Excellent Ruggedness
  • 48V Supply Voltage The device resides in a two-lead metal flanged package with liquid crystal polymer lid. The NI-400 package style is qualified for gross leak test – MIL-STD-750D, Method 1071.6, Test Condition C. The HVV1012-100 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 µA IGSS Gate Leakage Current VGS=5V,VDS=0V <1 µA GP 1 Power Gain POUT=100W,F=1025,1150MHz 20.5 dB IRL1 Input Return Loss POUT=100W,F=1025,1150MHz 11 dB džD

PD1 Pulse Droop POUT=100W,F=1025,1150MHz <0.3 dB 1.) Under Pulse Conditions: Pulse Width = 10 µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 8 A PD Power Dissipation 1250 W TS Storage Temperature -65 to +200 TJ Junction Temperature 200 °C Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance P OUT = 100W F = 1150 MHz 20:1 VSWR Symbol Parameter Max Unit LJJC 1 Thermal Resistance 0.14 °C/W PACKAGE RUGGEDNESS THERMAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS aBSOLUTE Ma XIMUM R aTINGS RUGGEDNESS THERMaL CHaR aCTERISTICS ELECTRIC aL CHaR aCTERISTICS PaCKaGE The high power HVV1012-100 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics applications operating over the frequency range from 1025MHz to 1150MHz. 1Under Pulse Conditions: Pulse Width = 10µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA 2Rated at TCASE = 25°

  • High Power Gain
  • Excellent Ruggedness
  • 48V Supply Voltage The device resides in a two-lead metal flanged package with liquid crystal polymer lid. The HV400 package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1012-100 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and operating voltage across the fre- quency band of operation. HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO04X2 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 06/10/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1012-100 L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty The innovative Semiconductor Company! The high power HVV1012-100 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1025 MHz to 1150 MHz.
  • High Power Gain
  • Excellent Ruggedness
  • 48V Supply Voltage The device resides in a two-lead metal flanged package with liquid crystal polymer lid. The NI-400 package style is qualified for gross leak test – MIL-STD-750D, Method 1071.6, Test Condition C. The HVV1012-100 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 µA IGSS Gate Leakage Current VGS=5V,VDS=0V <1 µA GP 1 Power Gain POUT=100W,F=1025,1150MHz 20.5 dB IRL1 Input Return Loss POUT=100W,F=1025,1150MHz 11 dB džD

PD1 Pulse Droop POUT=100W,F=1025,1150MHz <0.3 dB 1.) Under Pulse Conditions: Pulse Width = 10 µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 8 A PD Power Dissipation 1250 W TS Storage Temperature -65 to +200 TJ Junction Temperature 200 °C Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance P OUT = 100W F = 1150 MHz 20:1 VSWR Symbol Parameter Max Unit LJJC 1 Thermal Resistance 0.14 °C/W PACKAGE RUGGEDNESS THERMAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO04X2 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 06/10/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1012-100 L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty The innovative Semiconductor Company! The high power HVV1012-100 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1025 MHz to 1150 MHz.

  • High Power Gain
  • Excellent Ruggedness
  • 48V Supply Voltage The device resides in a two-lead metal flanged package with liquid crystal polymer lid. The NI-400 package style is qualified for gross leak test – MIL-STD-750D, Method 1071.6, Test Condition C. The HVV1012-100 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 µA IGSS Gate Leakage Current VGS=5V,VDS=0V <1 µA GP 1 Power Gain POUT=100W,F=1025,1150MHz 20.5 dB IRL1 Input Return Loss POUT=100W,F=1025,1150MHz 11 dB džD

PD1 Pulse Droop POUT=100W,F=1025,1150MHz <0.3 dB 1.) Under Pulse Conditions: Pulse Width = 10 µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 8 A PD Power Dissipation 1250 W TS Storage Temperature -65 to +200 TJ Junction Temperature 200 °C Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance P OUT = 100W F = 1150 MHz 20:1 VSWR Symbol Parameter Max Unit LJJC 1 Thermal Resistance 0.14 °C/W PACKAGE RUGGEDNESS THERMAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS <80

HVV1012-100 PRODUCT OVERVIEW L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO04X5 10/13/08 PaCKaGE DIMENSIONS Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. DraIN GaTE SOUrCE