HVV1011-035 HVVI | Alldatasheet
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HVV1011-035 PRODUCT OVERVIEW L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50µs Pulse, 5% Duty for TCAS and Mode-S Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO01X6 10/13/08 Preliminary
DESCRIPTION
FEaTURES
aBSOLUTE Ma XIMUM R aTINGS RUGGEDNESS THERMaL CHaR aCTERISTICS ELECTRIC aL CHaR aCTERISTICS PaCKaGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics applications operating over the frequency range from 1030MHz to 1090MHz. 1Under Pulse Conditions: Pulse Width = 50 µsec, Pulse Duty Cycle = 5% at VDD = 48V, IDQ = 15mA 2Rated at TCASE = 25°C
- High Power Gain
- Excellent Ruggedness
- 48V Supply Voltage The device resides in a Surface Mount Package with a ceramic lid. The SM200 package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1011-035 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at all phase angles and rated output power and operating voltage across the frequency band of operation HVVi Semiconductors, Inc . For additional information, visit: www.hvvi.com EG-01-PO01X1 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 5/09/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1011-040 L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Duty The innovative Semiconductor Company! The high power HVV1011-040 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics applications operating over the frequency range from 1030MHz to 1090MHz.
- High Power Gain
- Excellent Ruggedness
- 48V Supply Voltage The device resides in a Surface Mount Package with a ceramic lid. The SM200 package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1011-040 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. 1All parameters measured under pulsed conditions at 35 W output power under pulsed conditions with the pulse width = 50!sec, duty cycle = 5% and VDD = 48V, IDQ = 15mA in a broadband matched test fixture. 2Rated at TCASE = 25°C
Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 2 A PD
2 Power Dissipation 116 W
TS Storage Temperature -65 to +200 TJ Junction Temperature 200 °C ABSOLUTE MAXIMUM RATINGS Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance F = 1090 MHz 20:1 VSWR THERMAL CHARACTERISTICS Symbol Parameter Max Unit Thermal Resistance 1.5 °C/W PACKAGE RUGGEDNESS
ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 !A IGSS Gate Leakage Current VGS=5V,VDS=0V <1 !A GP
1 Power Gain POUT=35W,F=1060MHz 20 dB
IRL1 Input Return Loss POUT=35W,F=1060MHz 8 dB Drain Efficiency POUT=35W,F=1060MHz 52 % PD1 Pulse Droop POUT=35W,F=1060MHz <0.2 dB HVVi Semiconductors, Inc . For additional information, visit: www.hvvi.com EG-01-PO01X1 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 5/09/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1011-040 L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Duty The innovative Semiconductor Company! The high power HVV1011-040 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics applications operating over the frequency range from 1030MHz to 1090MHz.
- High Power Gain
- Excellent Ruggedness
- 48V Supply Voltage The device resides in a Surface Mount Package with a ceramic lid. The SM200 package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1011-040 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. 1All parameters measured under pulsed conditions at 35 W output power under pulsed conditions with the pulse width = 50!sec, duty cycle = 5% and VDD = 48V, IDQ = 15mA in a broadband matched test fixture. 2Rated at TCASE = 25°C
Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 2 A PD TS Storage Temperature -65 to +200 TJ Junction Temperature 200 °C ABSOLUTE MAXIMUM RATINGS Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance F = 1090 MHz 20:1 VSWR THERMAL CHARACTERISTICS Symbol Parameter Max Unit Thermal Resistance 1.5 °C/W PACKAGE RUGGEDNESS Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 !A IGSS Gate Leakage Current VGS=5V,VDS=0V <1 !A GP IRL1 Input Return Loss POUT=35W,F=1060MHz 8 dB Drain Efficiency POUT=35W,F=1060MHz 52 % PD1 Pulse Droop POUT=35W,F=1060MHz <0.2 dB HVVi Semiconductors, Inc . For additional information, visit: www.hvvi.com EG-01-PO01X1 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 5/09/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1011-040 L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Duty The innovative Semiconductor Company! The high power HVV1011-040 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics applications operating over the frequency range from 1030MHz to 1090MHz.
- High Power Gain
- Excellent Ruggedness
- 48V Supply Voltage The device resides in a Surface Mount Package with a ceramic lid. The SM200 package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1011-040 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. 1All parameters measured under pulsed conditions at 35 W output power under pulsed conditions with the pulse width = 50!sec, duty cycle = 5% and VDD = 48V, IDQ = 15mA in a broadband matched test fixture. 2Rated at TCASE = 25°C
Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 2 A PD TS Storage Temperature -65 to +200 TJ Junction Temperature 200 °C ABSOLUTE MAXIMUM RATINGS Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance F = 1090 MHz 20:1 VSWR THERMAL CHARACTERISTICS Symbol Parameter Max Unit Thermal Resistance 1.5 °C/W PACKAGE RUGGEDNESS Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 !A IGSS Gate Leakage Current VGS=5V,VDS=0V <1 !A GP IRL1 Input Return Loss POUT=35W,F=1060MHz 8 dB Drain Efficiency POUT=35W,F=1060MHz 52 % PD1 Pulse Droop POUT=35W,F=1060MHz <0.2 dB HVVi Semiconductors, Inc . For additional information, visit: www.hvvi.com EG-01-PO01X1 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 5/09/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1011-040 L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Duty The innovative Semiconductor Company! The high power HVV1011-040 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics applications operating over the frequency range from 1030MHz to 1090MHz.
- High Power Gain
- Excellent Ruggedness
- 48V Supply Voltage The device resides in a Surface Mount Package with a ceramic lid. The SM200 package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1011-040 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. 1All parameters measured under pulsed conditions at 35 W output power under pulsed conditions with the pulse width = 50!sec, duty cycle = 5% and VDD = 48V, IDQ = 15mA in a broadband matched test fixture. 2Rated at TCASE = 25°C
Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 2 A PD TS Storage Temperature -65 to +200 TJ Junction Temperature 200 °C ABSOLUTE MAXIMUM RATINGS Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance F = 1090 MHz 20:1 VSWR THERMAL CHARACTERISTICS Symbol Parameter Max Unit Thermal Resistance 1.5 °C/W PACKAGE RUGGEDNESS Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 !A IGSS Gate Leakage Current VGS=5V,VDS=0V <1 !A GP IRL1 Input Return Loss POUT=35W,F=1060MHz 8 dB Drain Efficiency POUT=35W,F=1060MHz 52 % PD1 Pulse Droop POUT=35W,F=1060MHz <0.2 dB HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO08X1 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 5/23/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1214-075 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Company! The high power HVV1214-075 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz. x High Power Gain x Excellent Ruggedness x 48V Supply Voltage The device resides in a two-lead metal flanged package with liquid crystal polymer lid. The HV400 package style is qualified for gross leak test – MIL-STD-750D, Method 1071.6, Test Condition C. The HVV1214-075 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 µA IGSS Gate Leakage Current VGS=5V,VDS=0V <1 µA GP
1 Power Gain POUT=75W,F=1200MHz,1400MHz 21 dB
IRL1 Input Return Loss POUT=75W,F=1200MHz,1400MHz 9 dB džD
1 Drain Efficiency POUT=75W,F=1200MHz,1400MHz 44 %
PD1 Pulse Droop POUT=75W,F=1200MHz,1400MHz <0.6 dB 1.) Under Pulse Conditions: Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA 2.) Rated at T CASE = 25°C Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 8 A PD
2 Power Dissipation 250 W
TS Storage Temperature -65 to +200 TJ Junction Temperature 200 °C Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance P OUT = 75W F = 1400MHz 20:1 VSWR Symbol Parameter Max Unit LJJC 1 Thermal Resistance 0.70 °C/W THERMAL CHARACTERISTICS PACKAGE RUGGEDNESS ABSOLUTE MAXIMUM RATINGS HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO08X1 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 5/23/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1214-075 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Company! The high power HVV1214-075 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz. x High Power Gain x Excellent Ruggedness x 48V Supply Voltage The device resides in a two-lead metal flanged package with liquid crystal polymer lid. The HV400 package style is qualified for gross leak test – MIL-STD-750D, Method 1071.6, Test Condition C. The HVV1214-075 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 µA IGSS Gate Leakage Current VGS=5V,VDS=0V <1 µA GP IRL1 Input Return Loss POUT=75W,F=1200MHz,1400MHz 9 dB džD PD1 Pulse Droop POUT=75W,F=1200MHz,1400MHz <0.6 dB 1.) Under Pulse Conditions: Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA 2.) Rated at TCASE = 25°C Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 8 A PD TS Storage Temperature -65 to +200 TJ Junction Temperature 200 °C Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance P OUT = 75W F = 1400MHz 20:1 VSWR Symbol Parameter Max Unit LJJC 1 Thermal Resistance 0.70 °C/W THERMAL CHARACTERISTICS PACKAGE RUGGEDNESS ABSOLUTE MAXIMUM RATINGS <25 2mA 1060MHz 1,2
HVV1011-035 PRODUCT OVERVIEW L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50µs Pulse, 5% Duty for TCAS and Mode-S Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO01X6 10/13/08 PaCKaGE DIMENSIONS Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc . For additional information, visit: www.hvvi.com EG-01-PO01X1 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 5/09/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 HVV1011-040 L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Duty The innovative Semiconductor Company! PACKAGE DIMENSIONS GATE HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. Note: Drawing is not actual size. SOURCE DRAIN