HVV0912-150

HVV0912-150 HVVI | Alldatasheet

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HVV0912-150 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11A 12/11/08

FeatuRes

desCRiPtion

oRdeRing inFoRMation

• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF , TCAS and Mode-S applications. The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz. The high voltage HVVFET™ technology produces over 150W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.. Device Part Number: HVV0912-150 Demo Kit Part Number: HVV0912-150-EK Available through Richardson Electronics (http://rfwireless.rell.com/) Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10μs and pulse period = 100μs. MODE FREQUENCY VDD IDQ Power GAIN EFFICIENCY IRL VSWR (MHz) (V) (mA) (W) (dB) (%) (dB) Class AB 1215 50 50 150 20 43 -5 20:1

HVV0912-150 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11A 12/11/08 eleCtRiCal CHaR aCteRistiCs Pulse CHaR aCteRistiCs tHeRMal PeRFoRManCe Ruggedness PeRFoRManCe HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS11A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications % Duty The innovative Semiconductor Company! The HVV0912-150 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. 1.) NOTE: All parameters measured under pulsed conditions at 150W output power measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle = 10% and VDD = 50V, IDQ = 50mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current . Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=50V - 50 200 µA IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 µA GP

1 Power Gain F=1215MHz 18 20 - dB

IRL1 Input Return Loss F=1215MHz - -5 -3.5 dB ηD

1 Drain Efficiency F=1215MHz 41 43 - %

VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=50mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300µA 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Units tr

1 Rise Time F=1215MHz - <17 50 nS

1 Fall Time F=1215MHz - <27 50 nS

PD1 Pulse Droop F=1215MHz - 0.25 0.5 dB Symbol Parameter Max Unit θJC 1 Thermal Resistance 0.13 °C/W Symbo l Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance F = 1215 MHz 20:1 VSWR THERMAL PERFORMANCE PULSE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS11A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications % Duty The innovative Semiconductor Company! The HVV0912-150 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. 1.) NOTE: All parameters measured under pulsed conditions at 150W output power measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle = 10% and VDD = 50V, IDQ = 50mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current . Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=50V - 50 200 µA IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 µA GP IRL1 Input Return Loss F=1215MHz - -5 -3.5 dB ηD VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=50mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300µA 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Units tr PD1 Pulse Droop F=1215MHz - 0.25 0.5 dB Symbol Parameter Max Unit θJC 1 Thermal Resistance 0.13 °C/W Symbo l Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance F = 1215 MHz 20:1 VSWR THERMAL PERFORMANCE PULSE CHARACTERISTICS The HVV0912-150 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. 1NOTE: All parameters measured under pulsed conditions at 150W output power measured at the 10% point of the pulse with pulse width = 10μsec, duty cycle = 10% and VDD = 50V, IDQ = 50mA in a broad- band matched test fixture. 2NOTE: Amount of gate voltage required to attain nominal quiescent current. Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=50V - 50 200 μA IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 μA GP1 Power Gain F=1215MHz 18 20 - dB IRL1 Input Return Loss F=1215MHz - -5 -3.5 dB ηD1 Drain Efficiency F=1215MHz 41 43 % VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=50mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300μA 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Unit Tr PD1 Pulse Droop F=1215MHz - 0.25 0.5 dB

HVV0912-150 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11A 12/11/08 HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS11A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 3 HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications % Duty The innovative Semiconductor Company! Zo = 10 Ω ZIN ZOUT 960MHz 1215MHz

HVV0912-150 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11A 12/11/08 Demonstration Board Outline Demonstration Circuit Board Picture HVV1012-250 Demonstration Circuit Board Bill of Materials (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS11A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 4 HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications % Duty The innovative Semiconductor Company! Demonstration Board Outline Demonstration Circuit Board Picture (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVV0912-150 Demonstration Circuit Board Bill of Materials Part Description Part Number Manufacturer C1,C2,C13 : 39.0 pF ATC 100B Chip Capacitor 100B390JP500X ATC C14: 1.0 uF, 100V Chip Capacitor (X7R 1210) GRM32ER72A105MA01L Murata C15, C19: 10K pF 100V Chi Capacitor (X7R 1206) C1206C103K1RACTU Kemet C16, C20: 1K pF 100V Chi Capacitor (X7R 1206) C1206C102K1RACTU Kemet C14: 47 pF ATC 100B Chip Capacitor 100B470JP500X ATC R1: 10 Ohms Chip Resistor (1206) SMD RC1206JR-07100KL DIGI-KEY R2: 1.0 K Ohms Chip Resistor (1206) SMD RC1206JR-07102KL DIGI-KEY C3: 2.2 pF ATC 100B Chip Capacitor 100B2R2JP500X ATC C4, C5: 2.0 pF ATC 100B Chip Capacitor 100B2R0JP500X ATC C6: 2.7 pF ATC 100B Chip Capacitor 100B2R7JP500X ATC C7, C9: 1.0 pF ATC 100B Chip Capacitor 100B1R0JP500X ATC C8: 1.8 pF ATC 100B Chip Capacitor 100B1R8JP500X ATC C10, C11: 3.3 pF ATC 100B Chip Capacitor 100B3R3JP500X ATC C12: 15.0 pF ATC 100B Chip Capacitor 100B150JP500X ATC C18: 10uF 63V Elect FK SMD EEV-FK1J100P Panasonic C15: 220uF 63V Elect FK SMD EEV-FK1J221Q Panasonic RF Connectors (2) Type "N" RF connectors 5919CC-TB-7 Coaxicom DC Drain Conn Connector Jack Banana Nylon Red J151-ND DIGI-KEY DC Ground Conn. Connector Jack Banana Nylon Black J152-ND DIGI-KEY DC Gate Conn. Connector Jack Banana Nylon Green J153-ND DIGI-KEY PCB Board PCB: Arlon, 30 mils thick, 2.55 Dielectric, 2 oz Copper DS2346 DS Electronics Heat Sink Cool Innovations Aluminum Heat Sink 3-252510RS3411 Cool Innovation Device Clamp Cool Innovations Nylon Clamp Foot FXT000158 Rv.B Cool Innovation S.S. Screws (3) 4-40 X 1/4 Stainless Steel Hex Head Socket Screws P242393 Copper State Bolt Alloy Screws (4) 4-40 X 1/2 Alloy Socket Cap screw Hex Head SCAS-0440-08C Small Parts Inc Metal Washers(4) #4 Washer Zinc PLTD Steel Lock ZSLW-004-M Small Parts Inc HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS11A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 4 HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications % Duty The innovative Semiconductor Company! Demonstration Board Outline Demonstration Circuit Board Picture (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVV0912-150 Demonstration Circuit Board Bill of Materials Part Description Part Number Manufacturer C1,C2,C13 : 39.0 pF ATC 100B Chip Capacitor 100B390JP500X ATC C14: 1.0 uF, 100V Chip Capacitor (X7R 1210) GRM32ER72A105MA01L Murata C15, C19: 10K pF 100V Chi Capacitor (X7R 1206) C1206C103K1RACTU Kemet C16, C20: 1K pF 100V Chi Capacitor (X7R 1206) C1206C102K1RACTU Kemet C14: 47 pF ATC 100B Chip Capacitor 100B470JP500X ATC R1: 10 Ohms Chip Resistor (1206) SMD RC1206JR-07100KL DIGI-KEY R2: 1.0 K Ohms Chip Resistor (1206) SMD RC1206JR-07102KL DIGI-KEY C3: 2.2 pF ATC 100B Chip Capacitor 100B2R2JP500X ATC C4, C5: 2.0 pF ATC 100B Chip Capacitor 100B2R0JP500X ATC C6: 2.7 pF ATC 100B Chip Capacitor 100B2R7JP500X ATC C7, C9: 1.0 pF ATC 100B Chip Capacitor 100B1R0JP500X ATC C8: 1.8 pF ATC 100B Chip Capacitor 100B1R8JP500X ATC C10, C11: 3.3 pF ATC 100B Chip Capacitor 100B3R3JP500X ATC C12: 15.0 pF ATC 100B Chip Capacitor 100B150JP500X ATC C18: 10uF 63V Elect FK SMD EEV-FK1J100P Panasonic C15: 220uF 63V Elect FK SMD EEV-FK1J221Q Panasonic RF Connectors (2) Type "N" RF connectors 5919CC-TB-7 Coaxicom DC Drain Conn Connector Jack Banana Nylon Red J151-ND DIGI-KEY DC Ground Conn. Connector Jack Banana Nylon Black J152-ND DIGI-KEY DC Gate Conn. Connector Jack Banana Nylon Green J153-ND DIGI-KEY PCB Board PCB: Arlon, 30 mils thick, 2.55 Dielectric, 2 oz Copper DS2346 DS Electronics Heat Sink Cool Innovations Aluminum Heat Sink 3-252510RS3411 Cool Innovation Device Clamp Cool Innovations Nylon Clamp Foot FXT000158 Rv.B Cool Innovation S.S. Screws (3) 4-40 X 1/4 Stainless Steel Hex Head Socket Screws P242393 Copper State Bolt Alloy Screws (4) 4-40 X 1/2 Alloy Socket Cap screw Hex Head SCAS-0440-08C Small Parts Inc Metal Washers(4) #4 Washer Zinc PLTD Steel Lock ZSLW-004-M Small Parts Inc

HVV0912-150 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11A 12/11/08 PaCKage diMensions HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS11A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 5 HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications % Duty The innovative Semiconductor Company! PACKAGE DIMENSIONS HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. Note: Drawing is not actual size. SOURCE DRAIN GATE Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc.