HVV1011-300

HVV1011-300 HVVI | Alldatasheet

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HVV1011-300 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/11/08

FeatuRes

desCRiPtion

oRdeRing inFoRMation

• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme High voltage vertical technology is well suited for high power pulsed applications in the L-Band including IFF , TCAS and Mode-S applications. The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFET™ technology produces over 300W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. Device Part Number: HVV1011-300 Demo Kit Part Number: HVV1011-300-EK Available through Richardson Electronics (http://rfwireless.rell.com/) Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 50µs and pulse period = 1ms. MODE FREQUENCY VDD IDQ Power GAIN η IRL VSWR (MHz) (V) (mA) (W) (dB) (%) (dB) Class AB 1400 50 100 120 20 45 -8 20:1

HVV1011-300 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/11/08 eleCtRiCal CHaR aCteRistiCs Pulse CHaR aCteRistiCs tHeRMal PeRFoRManCe Ruggedness PeRFoRManCe HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS02A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! The HVV1011-300 device is capable of wi thstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. 1.) NOTE: All parameters measured under pulsed conditions at 275W output power measured at the 10% point of the pulse with pulse width = 50µsec, duty cycle = 5% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage requi red to attain nominal quiescent current. Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=50V - 50 200 µA IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 µA GP

1 Power Gain F=1090MHz 16 18 - dB

IRL1 Input Return Loss F=1090MHz - -12 -8 dB ηD 1 Drain Efficiency F=1090MHz 48 50.5 - % VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=100mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300µA 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Units tr

1 Rise Time F=1090MHz - <35 50 nS

1 Fall Time F=1090MHz - <15 50 nS

PD1 Pulse Droop F=1090MHz - 0.3 0.5 dB Symbol Parameter Max Unit θJC 1 Thermal Resistance 0.20 °C/W Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance F = 1090 MHz 20:1 VSWR THERMAL PERFORMANCE PULSE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS02A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! The HVV1011-300 device is capable of wi thstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. 1.) NOTE: All parameters measured under pulsed conditions at 275W output power measured at the 10% point of the pulse with pulse width = 50µsec, duty cycle = 5% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage requi red to attain nominal quiescent current. Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=50V - 50 200 µA IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 µA GP IRL1 Input Return Loss F=1090MHz - -12 -8 dB ηD 1 Drain Efficiency F=1090MHz 48 50.5 - % VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=100mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300µA 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Units tr PD1 Pulse Droop F=1090MHz - 0.3 0.5 dB Symbol Parameter Max Unit θJC 1 Thermal Resistance 0.20 °C/W Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance F = 1090 MHz 20:1 VSWR THERMAL PERFORMANCE PULSE CHARACTERISTICS The HVV1011-300 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. 1NOTE: : All parameters measured under pulsed conditions at 275W output power measured at the 10% point of the pulse with pulse width = 50µsec, duty cycle = 5% and VDD = 50V, IDQ = 100mA in a broad- band matched test fixture. 2NOTE: Amount of gate voltage required to attain nominal quiescent current. Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=50V - 50 200 µA IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 µA GP1 Power Gain F=1090MHz 16 18 - dB IRL1 Input Return Loss F=1090MHz - -12 -8 dB ηD1 Drain Efficiency F=1090MHz 43 45 - % VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=100mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300µA 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Unit Tr PD1 Pulse Droop F=1090MHz - 0.3 0.5 dB

HVV1011-300 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/11/08 HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS02A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 3 HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! Zo = 10 Ω ZIN ZOUT 1030MHz 1030MHz

HVV1011-300 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/11/08 Demonstration Board Outline Demonstration Circuit Board Picture HVV1011-300 Demonstration Circuit Board Bill of Materials (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS02A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 4 HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! Demonstration Board Outline Demonstration Circuit Board Picture (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVV1011-300 Demonstration Circuit Board Bill of Materials HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS02A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 4 HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! Demonstration Board Outline Demonstration Circuit Board Picture (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVV1011-300 Demonstration Circuit Board Bill of Materials

HVV1011-300 Hig H Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS02A 12/11/08 PaCKage diMensions HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS02A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 5 HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications The innovative Semiconductor Company! PACKAGE DIMENSIONS HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. Note: Drawing is not actual size. SOURCE DRAIN GATE Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc.