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◎ SEMIHOW REV.A0, December 2014 HSC106D/M Repetitive Peak Off-State Voltage (VDRM=400V/600V) R.M.S On-State Current (IT(RMS)=4.0A) Average On-State Current (IT(AV)=2.55A) HSC106D/M Silicon Controlled Rectifier Dec 2014 General Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light and speed control, process and remote control, and warning systems where reliability of operation is important. Absolute Maximum Ratings (Ta=25℃) Symbol Parameter Value Units VDRM Repetitive Peak Off-State Voltage (Forward) HSC106D HSC106M 400 600 V VRRM Repetitive Peak Off-State Voltage (Reverse) HSC106D HSC106M 400 600 V I T(RMS) R.M.S On-State Current (All conduction angles) 4.0 A IT(AV) Average On-State Current 2.55 A ITSM Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non Repetitive, Tj=110℃) 20 A PGM Forward Peak Gate Power Dissipation (Pulse Width ≤1.0μsec, Tc=80℃) 0.5 W PG(AV) Forward Average Gate Power Dissipation (Pulse Width ≤1.0μsec, Tc=80℃) 0.1 W VRGM Reverse Peak Gate Voltage 6.0 V IFGM Forward Peak Gate Current (Pulse Width ≤1.0μsec, Tc=80℃) 0.2 A TSTG Storage Temperature Range -40 to +150 ℃ Tj Operating Junction Temperature -40 to +110 ℃
FEATURES
- K 2. A 3. G VDRM = 400V / 600 V IT(RMS) = 4.0A 1.Cathode Symbol 2.Anode 3.Gate HSC106D/M TO-126
◎ SEMIHOW REV.A0, December 2014 HSC106D/M Electrical Characteristics (Tc=25℃) Symbol Parameter Test Conditions Min Typ Max Units IGT Gate Trigger Current(1) VAK=6V, RL=100Ω, Tc=25℃ Tc=-40℃ 200 500 uA VGT Gate Trigger Voltage(1) VAK=6V, RL=100Ω, Tc=25℃ Tc=-40℃ 0.4 0.5 0.6 0.7 0.8 1.0 V VGD Non Trigger Gate Voltage (1) VAK=12V, RL=100Ω, Tc=110℃ 0.2 V IH Holding Current VAK=12V, Gate open, Tc=25℃ Tc=-40℃ 0.4 0.55 3.0 6.0 mA IL Latching Current VAK=12V, IG=20mA, Tc=25℃ Tc=-40℃ 5.0 7.0 mA IDRM IRRM Repetitive or Reverse Peak Off-State Current V AK=VDRM or VRRM, PKG=1000Ω Tc=25℃ Tc=110℃ 100 uA VTM Peak On-State Voltage(2) IFM=1.0A 2.2 V (1) RGK Current is not included in measurement (2) Pulse Test : Pulse width ≤ 2.0ms, Duty cycle ≤ 2% Thermal Characteristics Symbol Parameter Test Conditions Min Typ Max Units RTH(J-C) Thermal Resistance Junction to Case 3.0 ℃/W RTH(J-A) Thermal Resistance Junction to Ambient 75 ℃/W TL Maximum Lead Temperature for Soldering Purpose 1/8”, from case for 10second 260 ℃
◎ SEMIHOW REV.A0, December 2014 HSC106D/M IL, Latching Current [uA] TJ, Junction Temperature [℃] VGT, Gate Trigger Voltage [V] TJ, Junction Temperature [℃] IH, Holding Current [uA] TJ, Junction Temperature [℃] IGT, Gate Trigger Current [uA] TJ, Junction Temperature [℃] P(AV), Average On-State Power Dissipation [W] IT(AV), Average On-State Current [A] TC, Case Temperature [℃] IT(AV), Average On-State Current [A] Performance Curves Fig 1. Average Current Derating Fig 2. Maximum On-State Power Dissipation Fig 3. Typical Gate Trigger Current vs Junction Temperature Fig 4. Typical Holding Current vs Junction Temperature Fig 5. Typical Gate Trigger Voltage vs Junction Temperature Fig 6. Typical Latching Current vs Junction Temperature
◎ SEMIHOW REV.A0, December 2014 HSC106D/M Package Dimension 12max13max 1.2±0.2 0.78±0.08 8.5max 3.8±0.22.5±0.2 φ3.2 ±0.2 1.27typ 2.3max 2.3max 2.8max 0.5±0.1 TO-126