HSC106D SEMIHOW | Alldatasheet
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◎ SEMIHOW REV.1.1 May 2007 Repetitive Peak Off-State Voltage (VRM= 400V) R.M.S On-state Current (IT(RMS)=4.0A) Average On-state Current (IT(AV)=2.55A) Sensitive Gate Triggering (0.2mAMax@25℃)
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Sensitive Gate Silicon Controlled Rectifier Glassivated PNPN devices designed for high volume consumer applications such as temperature, light and speed control ; process and remote control, and warning systems where reliability of operation is important. General Description VDRM = 400 V IT(RMS) = 4.0A 1.Cathode Symbol 2.Anode 3.Gate Absolute Maximum Ratings (TJ=25℃) Symbol Parameter Value Units VDRM Repetitive Peak Off-State Voltage (Forward) 400 V VRRM Repetitive Peak Off-State Voltage (Reverse) 400 V IT(RMS) On-State R.M.S Current (180˚ Condition Angles, T C=80℃) 4.0 A IT(AV) On-State Average Current (180˚ Condition Angles, TC=80℃) 2.55 A ITSM Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive, Tj = 110 °C) 20 A I2t Circuit Fusing Considerations (t=8.3mS) 1.65 A2s PGM Forward Peak Gate Power Dissipation (Pulse Width ≤1.0μsec,Tc=80℃) 0.5 W PG(AV) Forward Average Gate Power Dissipation (Pulse Width ≤1.0μsec, Tc=80℃) 0.1 W VGRM Reverse Peak Gate Voltage 6.0 V IFGM Forward Peak Gate Current (Pulse Width ≤1.0 μsec, Tc=80℃) 0.2 A TSTG Storage Temperature Range -40 to +150 ℃ Tj Operating Junction Temperature -40 to +110 ℃ HSC106D
◎ SEMIHOW REV.1.1 May 2007 Electrical Characteristics (Ta=25℃) Symbol Parameter Test Conditions Min Typ Max Units IGT Gate Trigger Current(1) VAK= 6VDC, RL= 100Ω, TJ= 25℃ VAK= 6VDC, RL= 100Ω, TJ= -40℃ 200 500 uA VGT Gate Trigger Voltage(1) VAK= 6VDC, RL= 100Ω, TJ= 25℃ VAK= 6VDC, RL= 100Ω, TJ= -40℃ 0.4 0.5 0.6 0.75 0.8 1.0 V VGD Non Trigger Gate Voltage VAK= 12VDC, RL= 100Ω, TC= 110℃ 0.2 V IH Holding Current VAK= 12VDC, Gate open, Initiating current=20mA, TJ= 25℃ TJ= -40℃ TJ = 110℃ 0.19 0.33 0.07 3.0 6.0 2.0 mA IL Latching Current VAK= 12VDC, IG= 20mA, Gate Open, TJ= 25℃ TJ= 110℃ 0.2 0.35 5.0 mA VTM Peak Forward On-State Voltage (2) IFM=1A 2.2 V IDRM IRRM Repetitive or Reverse Peak Blocking Current VAK= VDRM or VRRM, TC= 25℃ TC= 110℃ 100 uA uA dv/dt Critical Rate of Rise Off state Voltage VAK = VDRM, Exponential waveform, RGK= 1㏀, Gate open, TJ=110℃ 8.0 V/uS (1) RGK Current is not included in measurement (2) Pulse Test : Pulse width ≤ 2.0mS, Duty Cycle ≤ 2% ℃/W3.0Junction to CaseThermal ResistanceRTH(J-C) ℃260Maximum Lead Temperature for Soldering Purpose 1/8”, from case for 10secondTL ℃/W75Junction to AmbientThermal ResistanceRTH(J-A) UnitsMaxTypMinConditionsParameterSymbol Thermal Characteristics
◎ SEMIHOW REV.1.1 May 2007 Fig 5. Typical Gate Trigger Voltage vs Junction Temperature Fig 1. Average Current Derating IT(AV) Average On-State Current (A) TC, Case Temperature (℃) 110 100 Fig 2. Maximum On-State Power Dissipation IT(AV) Average On-State Current (A) P(AV), Average On-State Power Dissipation (Watt) Fig 3. Typical Gate Trigger Current vs Junction Temperature -40 -25 -10 5 20 35 50 65 80 95 110 TJ Junction Temperature (℃) IGT, Gate Trigger Current (μA) 100 Fig 4. Typical Holding Current vs Junction Temperature IH, Holding Current (μA) -40 -25 -10 5 20 35 50 65 80 95 110 100 TJ Junction Temperature (℃) -40 -25 -10 5 20 35 50 65 80 95 110 VGT, Gate Trigger Voltage (V) 1.0 0.6 0.2 0.3 0.4 0.5 0.7 0.8 0.9 TJ Junction Temperature (℃) Fig 6. Typical Latching Current vs Junction Temperature IL, Latching Current (μA) -40 -25 -10 5 20 35 50 65 80 95 110 1000 100 TJ Junction Temperature (℃) Performance Curves Half Sine Wave Resistive or Inductive Load 50 to 400Hz Half Sine Wave Resistive or Inductive Load 50 to 400Hz DC DC Junction Temperature = 110℃
◎ SEMIHOW REV.1.1 May 2007 Package Dimension D φ L b B C a p p Dimension Dimension Min Max Min Max A - 8.5 L1 2.3 2.7 B - 12.0 φ 3.0 3.4 C - 2.8 a 0.7 0.86 C1 1.27 Typ b 1.2 Typ D 3.6 4.0 p 2.3 L- 13.0 SymbolSymbol HSC106D (TO-126) Dimension Table Unit :[ mm] A