HSBD175 HUASHAN | Alldatasheet
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Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current 100 μA VCB=45V , IE=0 IEBO Emitter Cut-off Current 1 mA VEB=5V , IC=0 *HFE（1） DC Current Gain 40 250 VCE=2V , IC=150mA *HFE（2） DC Current Gain 15 VCE=2V , IC=1A *VCE(sat) Collector- Emitter Saturation V oltage 0.8 V IC=1A, IB=0.1A *VBE(on) Base-Emitter On V oltage 1.3 V VCE=2V , IC=1A VCEO(sus) Collector-Emitter Sustaining V oltage 45 V IC=100mA, IB=0 ft Current Gain-Bandwidth Product 3 MHz VCE=10V , IC=250mA, *Pulse Test:PW=300μs,Duty Cycle=1.5% Pulsed █hFE(3) Classification C a s s i f i c a t i o n 6 1 0 1 6 hFE(3) 40~100 63~160 100~250 NPN SILICON TRANSISTOR HSBD175 1―Emitter, E 2―Collector，C 3―Base，B