H1020S HUASHAN | Alldatasheet
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Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS power amplifier Applications, power Switching Applications. █ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage -50 V IC=-100μA, I E=0 BVCEO Collector-Emitter Breakdown V oltage -50 V IC=-10mA, I B=0 BVEBO Emitter-Base Breakdown V oltage -5 V IE=-100μA，IC=0 ICBO Collector Cut-off Current -1.0 μA VCB=-50V , IE=0 IEBO Emitter Cut-off Current -1.0 μA VEB=-5V , IC=0 HFE(1) DC Current Gain 70 240 VCE=-2V , IC=-0.5A HFE(2) 40 VCE=-2V , IC=-1.5A VCE(sat) Collector- Emitter Saturation V oltage -0.5 V IC=-1A, IB=-50mA VBE(sat) Base-Emitter Saturation V oltage -1.2 V IC=-1A, IB=-50mA fT Current Gain-Bandwidth Product 100 MHz VCE=-2V , IC=-0.5A Cob Output Capacitance 40 pF VCB=-10V , IE=0，f=1MHz tON Turn-on Time 0.1 μS tSTG Storage Time 1.0 μS tF Fall Time 0.1 μS See specified test circuit █ h FE Classification O Y 70—140 120—240 1―Emitter，E 2―Collector，C 3―Base，B TO-92 H1020S P NP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H1020S P NP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H1020S P NP S I L I C O N T R A N S I S T O R