H128M HUASHAN | Alldatasheet
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Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Suitable For Low Voltage Large Current Drivers. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 20 V IC=50μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 15 V IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 6.5 V IE=50μA，IC=0 HFE DC Current Gain 150 VCE=1V, IC=100mA VCE(sat) Collector- Emitter Saturation Voltage 0.2 0.3 V IC=500mA, IB=50mA ICBO Collector Cut-off Current 0.1 μA VCB=20V, IE=0 IEBO Emitter Cut-off Current 0.1 μA VEB=6V, IC=0 fT Current Gain-Bandwidth Product 260 MHz VCE=5V, IC=50mA Cob Output Capacitance 5 pF VCB=10V, IE=0，f=1MHz Ron On Resistance 0.6 Ω VIN=0.3V,f=1KHz，IB=1mA 1―Emitter，E 2―Collector，C 3―Base，B TO-92 H128M NPN S I L I C O N T R A N S I S T O R