H1268

H1268 HUASHAN | Alldatasheet

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Shantou Huashan Electronic Devices Co.,Ltd. █ LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO Collector-Emitter Breakdown V oltage -120 V IC=-1mA, I B=0 ICBO Collector Cut-off Current -100 nA VCB=-120V , IE=0 IEBO Emitter Cut-off Current -100 nA VEB=-5V , IC=0 HFE DC Current Gain 200 700 VCE=-6V , IC=-2mA VCE(sat) Collector- Emitter Saturation V oltage -0.3 V IC=-10mA, IB=-1mA VBE Base-Emitter V oltage -0.65 V IC=-6A, IB=-2mA fT Current Gain-Bandwidth Product 100 MHz VCE=-6V , IC=-1mA Cob Output Capacitance 4.0 pF VCB=-10V , IE=0，f=1MHz

6 VCE=-6V , IC=-100μA，

f=10Hz，Rg=10KΩ 2 dB VCE=-6V , IC=-100μA， f=1Hz，Rg=10KΩ NF Noise Figure

3 VCE=-6V , IC=-100μA，

f=1Hz，Rg=100KΩ █ h FE Classification G R B L 200—400 350—700 1―Emitter，E 2―Collector，C 3―Base，B TO-92 H1268 PNP S I L I C O N T R A N S I S T O R