HSB100-6

HSB100-6 SEMIHOW | Alldatasheet

Document overview

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Technical content

◎ SEMIHOW REV.A0,Dec 2007 HSB100-6 HSB100-6

◎ SEMIHOW REV.A0,Dec 2007 HSB100-6 Sensitive Gate Silicon Controlled Rectifiers HSB100-6 Absolute Maximum Ratings TC=25℃ unless otherwise specified TO-92 G K A

Features

• Repetitive Peak Off-State Voltage : 400V
• R.M.S On-State Current(IT(RMS)=0.8A)
• Low On-State Voltage (1.2V(Typ.)@ ITM) General Description PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment. Symbol Parameter Value Units VDRM Repetitive Peak Off-State Voltage 400 V IT(RMS) R.M.S On-State Current (All conduction angles) 0.8 A IT(AV) Average On-State Current (Half Sine Wave : T C=74℃) 0.5 A ITSM Surge On-State Current (1/2 Cycle, 60Hz, Peak, Non Repetitive) 10 A I 2t Circuit Fusing Considerations (t=8.3mS) 0.415 A2s PGM Forward Peak Gate Power Dissipation (Ta=25℃)0 .1 W PG(AV) Forward Average Gate Power Dissipation (Ta=25℃, t=8.3mS) 0.01 W V RGM Reverse Peak Gate Voltage 5 V IFGM Forward Peak Gate Current 1 A TSTG Storage Temperature Range -40 ~ 125 ℃ Tj Operating Junction Temperature -40 ~ 125 ℃ VDRM = 400V IT(RMS) = 0.8A

◎ SEMIHOW REV.A0,Dec 2007 HSB100-6 Symbol Parameter Test Conditions Min Typ Max Units IGT Gate Trigger Current(1) VAK=7V, RL=100Ω 200 ㎂ VGT Gate Trigger Voltage(1) VAK=7V, RL=100Ω, Ta=25℃ VAK=7V, RL=100Ω, Ta=-40℃ 0.8 1.2 V V V GD Non Trigger Gate Voltage V AK=12V, RL=100Ω, TC=125℃ 0.2 V IH Holding Current VAK=12V, Gate open, Initiating current=50mA, Ta=25℃ Ta=-40℃ I DRM Repetitive Peak Off-State Current V AK=VDRM or VRRM, TC=25℃ VAK=VDRM or VRRM, TC=125℃ 200 V TM Peak On-State Voltage (2) ITM=1A, Peak 1.2 1.7 V Symbol Parameter Test Conditions Min Typ Max Units RTH(J-C) Thermal Resistance Junction to Case 1.3 ℃/W RTH(J-A) Thermal Resistance Junction to Ambient 60 ℃/W Electrical Characteristics (Ta=25℃) (1) RGK Current is not included in measurement (2) Forward current applied for 1ms maximum duration, duty cycle ≤ 1% Thermal Characteristics Fig 1. HSB100-6 Current Derating (Reference : Case Temperature) Fig 2. HSB100-6 Current Derating (Reference : Ambient Temperature) Performance Curves HSB100-6

◎ SEMIHOW REV.A0,Dec 2007 HSB100-6 4.58±0.25 3.71±0.2 0.46±0.1 1.27typ 1.27typ 1.02±0.1 3.71±0.25 3.6±0.25 4.58±0.2514.47±0.5 Package Dimension TO-92 Dimensions in Millimeters

◎ SEMIHOW REV.A0,Dec 2007 HSB100-6 H P P2F1 F2 P1 W0 W2 W Item Symbol Dimension [mm] Reference Tolerance Component pitch P 12.7 ±0.5 Side lead to center of feed hole P1 3.85 ±0.5 Center lead to center of feed hole P2 6.35 ±0.5 Lead pitch FI,F2 2.5 +0.2/-0.1 Carrier Tape width W 18.0 +1.0/-0.5 Adhesive tape width W0 6.0 ±0.5 Tape feed hole location W1 9.0 ±0.5 Adhesive tape position W2 1.0 MAX Center of feed hole to bottom of component H 19.5 ±1 Center of feed hole to lead form H0 16.0 ±0.5 Component height H1 27.0 max Tape feed hole diameter D0 4.0 ±0.2 Package Dimension TO-92 TAPING