HS945 HUASHAN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS The H945 is designed for driver stage of AF amplifier And low speed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 60 V IC=100μA, I E=0 BVCEO Collector-Emitter Breakdown Voltage 50 V IC=100μA, I B=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=100μA，IC=0 HFE DC Current Gain 70 700 VCE=6V, IC=1mA VCE(sat) Collector- Emitter Saturation Voltage 0.3 V IC=100mA, IB=10mA VBE(sat) Base-Emitter Saturation Voltage 1.0 V IC=100mA, IB=10mA ICBO Collector Cut-off Current 100 nA VCB=60V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0 fT Current Gain-Bandwidth Product 300 MHz VCE=6V, IC=10mA Cob Output Capacitance 2.5 pF VCB=6V, IE=0，f=1MHz NF Noise Figure 4.0 dB VCE=6V,IC=0.5mA，f=1KHz， Rs=500Ω █ h FE Classification O Y GR BL 70—140 120—240 200—400 350—700 1―Emitter，E 2―Base，B 3― Collector，C TO-92 HS945 NPN S I L I C O N T R A N S I S T O R