HS1205 HUASHAN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Large Current Switching █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage -25 V IC=-10μA, IE=0 BVCEO Collector-Emitter Breakdown V oltage -20 V IC=-1mA, IB=0 BVEBO Emitter-Base Breakdown V oltage -5 V IE=-10μA, IC=0 ICBO Collector Cut-off Current -500 nA VCB=-20V , IE=0 IEBO Emitter Cut-off Current -500 nA VEB=-4V , IC=0 HFE（1） DC Current Gain 100 400 VCE=-2V , IC=-500mA HFE（2） DC Current Gain 60 VCE=-2V , IC=-4A VCE(sat1) Collector- Emitter Saturation V oltage -250 -500 mV IC=-3A, IB=-60mA VCE(sat2) Collector- Emitter Saturation V oltage -1.0 -1.3 V IC=-3A, IB=-60mA VBE(sat) Base-Emitter Saturation V oltage -0.94 -1.2 V IC=-3A, IB=-60mA ft Current Gain-Bandwidth Product 320 MHz VCE=-5V , IC=-200mA, Cob Output Capacitance 60 pF VCB=-10V , IE=0，f=1MHz tON Turn-On Time 40 nS tSTG Storage Time 200 nS See specified test circuit tF Fall Time 10 nS █ hFE Classification R S T 1 0 0 —200 140 —280 200 —400 PNP S I L I C O N T R A N S I S T O R HS1205 TO-126 1―Base，B 2―Collector，C 3―Emitter，E