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◎ SEMIHOW REV.A0,December 2014 HRW82N10K_HRI82N10K BVDSS = 100 V RDS(on) typ = 6.5mΩ ID = 100 A

FEATURES

100V N-Channel Trench MOSFET  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 110nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 6.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Thermal Resistance Characteristics Symbol Parameter Value Units VDSS Drain-Source Voltage 100 V ID Drain Current – Continuous (TC = 25℃) 100 A Drain Current – Continuous (TC = 100℃) 70 A IDM Drain Current – Pulsed (Note 1) 350 A VGS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 560 mJ EAR Repetitive Avalanche Energy (Note 1) 22 mJ PD Power Dissipation (TA = 25℃) 3.75 W Power Dissipation (TC = 25℃) - Derate above 25℃ 167 W

1.11 W/℃

TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 0.9 ℃/W RθJA Junction-to-Ambient * -- 40 RθJA Junction-to-Ambient -- 62.5 HRW82N10K HRI82N10K D2-PAK I2-PAK * When mounted on the minimum pad size recommended (PCB Mount)

◎ SEMIHOW REV.A0,December 2014 HRW82N10K_HRI82N10K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 100 A ISM Pulsed Source-Drain Diode Forward Current -- -- 350 VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time IS = 30 A, VGS = 0 V diF/dt = 100 A/μs -- 55 -- ㎱ Qrr Reverse Recovery Charge -- 90 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 ㎂ IGSS Gate-Body Leakage Current VGS = ±25 V, VDS = 0 V -- -- ±100 ㎁ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 4600 -- ㎊ Coss Output Capacitance -- 520 -- ㎊ Crss Reverse Transfer Capacitance -- 330 -- ㎊ Rg Gate Resistance VGS = 0 V, VDS = 0 V, f = 1MHz -- 1.7 -- Ω Dynamic Characteristics td(on) Turn-On Time VDS = 50 V, ID = 30 A, RG = 6 Ω -- 65 -- ㎱ tr Turn-On Rise Time -- 70 -- ㎱ td(off) Turn-Off Delay Time -- 190 -- ㎱ tf Turn-Off Fall Time -- 50 -- ㎱ Qg Total Gate Charge VDS = 80 V, ID = 30 A, VGS = 10 V -- 110 -- nC Qgs Gate-Source Charge -- 24 -- nC Qgd Gate-Drain Charge -- 44 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.2 -- 3.8 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 30 A -- 6.5 8.2 mΩ gFS Forward Transconductance VDS = 20, ID = 30 A -- 80 -- S Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=27A, VDD=35V, RG=25Ω, Starting TJ =25°C

◎ SEMIHOW REV.A0,December 2014 HRW82N10K_HRI82N10K Package Dimension TO-263(D2PAK)

◎ SEMIHOW REV.A0,December 2014 HRW82N10K_HRI82N10K Package Dimension TO-262(I2PAK)