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BVDSS = 100 V RDS(on) typ =3 0 Pȍ ID =2 5 A
FEATURES
100V N-Channel Trench MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested April 2016 Absolute Maximum Ratings TC=25 unless otherwise specified 1.Gate 2. Drain 3. Source D2-PAK Symbol Parameter Value Units VDSS Drain-Source Voltage 100 V ID Drain Current – Continuous (TC = 25) 25 A Drain Current – Continuous (TC = 100) 17.5 A IDM Drain Current – Pulsed (Note 1) 88 A VGS Gate-Source Voltage ρ20 V EAS Single Pulsed Avalanche Energy (Note 2) 80 mJ EAR Repetitive Avalanche Energy (Note 1) 6m J PD Power Dissipation (TA = 25) 3.75 W Power Dissipation (TC = 25) - Derate above 25 60 W
0.4 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +175 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 0.9 /WRșJA Junction-to-Ambient * -- 40 RșJA Junction-to-Ambient -- 62.5 * When mounted on the minimum pad size recommended (PCB Mount)
Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 25 A ISM Pulsed Source-Drain Diode Forward Current -- -- 88 VSD Source-Drain Diode Forward Voltage I S = 12 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time IS = 12 A, VGS = 0 V diF/dt = 50 A/ȝV -- 55 -- Ꭸ Qrr Reverse Recovery Charge -- 80 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 Ꮃ VDS = 80 V, TJ = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ20 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2650 -- Ꮔ Coss Output Capacitance -- 140 -- Ꮔ Crss Reverse Transfer Capacitance -- 95 -- Ꮔ Rg Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 1.2 -- Dynamic Characteristics td(on) Turn-On Time VDS = 50 V, ID = 12 A, RG = 6 -- 30 -- Ꭸ tr Turn-On Rise Time -- 20 -- Ꭸ td(off) Turn-Off Delay Time -- 110 -- Ꭸ tf Turn-Off Fall Time -- 25 -- Ꭸ Qg Total Gate Charge VDS = 80 V, ID = 12 A, VGS = 10 V -- 50 -- nC Qgs Gate-Source Charge -- 10 -- nC Qgd Gate-Drain Charge -- 13 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=11A, VDD=25V, RG=25:, Starting TJ =25qC VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.2 -- 3.8 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 12 A -- 30 37 m gFS Forward Transconductance V DS = 5, ID = 12 A -- 21 -- S
Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Figure 4. Body Diode Forward Voltage Figure 5. Capacitance Characteristics Figur e 6. Gate Charge Characteristics
3500 Ciss = Cgs + Cgd (Cds = shorted)
Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
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