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HRD13N10K_HRU13N10K BVDSS = 100 V RDS(on) typ =8 5 Pȍ ID =3 . 5 A
FEATURES
Absolute Maximum Ratings TC=25 unless otherwise specified HRD13N10K / HRU13N10K 100V N-Channel Trench MOSFET Symbol Parameter Value Units VDSS Drain-Source Voltage 100 V ID Drain Current – Continuous (TC = 25) 3.5 A Drain Current – Continuous (TC = 70) 2.8 A IDM Drain Current – Pulsed (Note 1) 14.0 A VGS Gate-Source Voltage ρ20 V EAS Single Pulsed Avalanche Energy (Note 2) 40 mJ IAR Avalanche Current (Note 1) 3.5 A PD Power Dissipation (TA = 25)* 2.5 W Power Dissipation (TC = 25) - Derate above 25 37 W
0.3 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 1.Gate 2. Drain 3. Source Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 3.4 /WRșJA Junction-to-Ambient* -- 50 RșJA Junction-to-Ambient -- 110 Dec 2013 D-PAK I-PAK HRD13N10K HRU13N10K * When mounted on the minimum pad size recommended (PCB Mount) Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 20 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 85 Pȍ (Typ.) @VGS=10V Lower RDS(ON) : 135 Pȍ (Typ.) @VGS=4.5V Built-in ESD Diode 100% Avalanche Tested
HRD13N10K_HRU13N10K Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=0.1mH, ISD$9DD=50V, RG=25:, Starting TJ =25qC 3. ISD$,d i / d t$ȝV, VDD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\\&\\FOH 5. Essentially Independent of Operating Temperature Electrical Characteristics TC=25 qC unless otherwise specified IS Continuous Source-Drain Diode Forward Current -- -- 3.5 A ISM Pulsed Source-Drain Diode Forward Current -- -- 14.0 VSD Source-Drain Diode Forward Voltage I S = 3.5 A, VGS = 0 V -- -- 1.1 V trr Reverse Recovery Time IS = 3.5 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4) -- 44 -- Ꭸ Qrr Reverse Recovery Charge -- 80 -- nC Symbol Parameter Test Conditions Min Typ Max Units VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 1.5 -- 2.5 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A -- 85 105 m VGS = 4.5 V, ID = 2.0 A -- 135 175 m On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 Ꮃ VDS = 100 V, TC = 125 -- -- 30 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ16 V, VDS = 0 V -- -- ρ10 Ꮃ Off Characteristics Ciss Input Capacitance VDS = 30 V, VGS = 0 V, f = 1.0 MHz -- 940 1220 Ꮔ Coss Output Capacitance -- 80 105 Ꮔ Crss Reverse Transfer Capacitance -- 50 65 Ꮔ Dynamic Characteristics td(on) Turn-On Time VDS = 50 V, ID = 3.5 A, RG = 25 (Note 4,5) -- 17 44 Ꭸ tr Turn-On Rise Time -- 24 58 Ꭸ td(off) Turn-Off Delay Time -- 85 180 Ꭸ tf Turn-Off Fall Time -- 12 34 Ꭸ Qg Total Gate Charge VDS = 80 V, ID = 3.5 A, VGS = 10 V (Note 4,5) -- 20 26 nC Qgs Gate-Source Charge -- 3.0 -- nC Qgd Gate-Drain Charge -- 4.2 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics Package Marking and Odering Information Device Marking Week Marking Package Packing Quantity RoHS Status HRD13N10K YWWX TO-252 Tube / Reel 80 / 2,500 Pb Free HRD13N10K YWWXg TO-252 Tube / Reel 80 / 2,500 Halogen Free HRU13N10K YWWX TO-251 Tube 80 Pb Free HRU13N10K YWWXg TO-251 Tube 80 Halogen Free
HRD13N10K_HRU13N10K Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
HRD13N10K_HRU13N10K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
HRD13N10K_HRU13N10K Package Dimension {vTY\\YG
HRD13N10K_HRU13N10K Package Dimension {vTY\\XG